High Resolution Backscatter Electron (BSE) Imaging using the Autrata Modified YAG BSE Detector: Comparison of an In-lens Hitachi S-900 FESEM with the Below-the-Lens Hitachi S-4700 FESEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 1046-1047
Author(s):  
Stanley L. Erlandsen ◽  
Ya Chen ◽  
Chris Frethem
Keyword(s):  
High Resolution ◽  
Colloidal Gold ◽  
Ion Beam ◽  
Beam Current ◽  
Backscatter Electron ◽  
Ion Beam Sputtering ◽  
Gold Particles ◽  
Lens Position ◽  
Beam Sputtering ◽  
Working Distance

To obtain high resolution backscatter electron (BSE) images in field emission SEM (FESEM), one must consider selection of accelerating voltage, beam current, working distance between the specimen and the backscatter detector (in-lens or below-the-lens position for the specimen), the type of BSE detector, and the type of metal used to coat the specimen to improve conductivity and signal collection [1]. A new generation of below-the-lens FESEM have been tested for BSE imaging on biological samples, but no information exists on whether or not high resolution imaging is possible. Here we report the comparison of detection of a colloidal gold standard (6, 12, 18 nm) by high resolution BSE imaging using Autrata-modified YAG detectors in an in-lens FESEM and in a below-the-lens FESEM.Standards were prepared by mixing colloidal gold particles of 6 nm, 12 nm, and 18 nm. The gold particles were attached via poly-l-lysine to glass chips and coated with <1 nm Pt by ion beam sputtering.

Ion Beam Sputtering for High Resolution Depth Profiling

2009 ◽  
Vol 15 (3) ◽  
pp. 216-219 ◽  
Author(s):  
Hee Jae Kang ◽  
Dae Won Moon ◽  
Hyung-Ik Lee
Keyword(s):  
High Resolution ◽  
Ion Beam ◽  
Depth Profiling ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

High-resolution field emission SEM of bulk biological samples: Relationship between different metal coatings, their thicknesses, and quality of backscatter electron versus secondary-electron imaging

1993 ◽  
Vol 51 ◽  
pp. 460-461
Author(s):  
Chris Frethem ◽  
Carol Wells ◽  
Vince Carlino ◽  
Stanley L. Erlandsen
Keyword(s):  
High Resolution ◽  
Biological Samples ◽  
Low Voltage ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Metal Coatings ◽  
Direct Exposure ◽  
Beam Sputtering ◽  
Electron Imaging

High resolution visualization of cell surfaces in bulk biological samples can be obtained by low voltage FESEM using either SE or BSE imaging methods and the preferred selection of low accelerating voltages (1-4 keV) has been based on theoretical considerations related to interaction volumes, electron charge, and potential radiation damage to the surface produced by direct exposure to the electron beam. Fine metal coatings (≤1 nm) produced by ion sputtering for high resolution FESEM imaging are used to minimize charging and to increase SE contrast as well as BSE topographical contrast.The purpose of this work was to investigate the relationship between the thickness of metal coatings produced by ion beam sputtering and the quality of imaging obtained by SE and BSE of biological samples. Cells of Proteus mirabilus were immunocytochemically labeled with 12 nm colloidal gold as previously described, fixed in glutaraldehyde followed by post-fixation in osmium, and critical point dried in CO2.

Some applications of ion beam sputtering to high resolution electron microscopy

Micron (1969) ◽  
1977 ◽  
Vol 8 (3) ◽  
pp. 151-170 ◽  
Author(s):  
K. Hojou ◽  
T. Oikawa ◽  
K. Kanaya ◽  
T. Kimura ◽  
K. Adachi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
Ion Beam Sputtering ◽  
Resolution Electron ◽  
Beam Sputtering

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

2013 ◽  
Vol 734-737 ◽  
pp. 2545-2548
Author(s):  
Chao Ming Chen ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hall Effect Measurement ◽  
Beam Current ◽  
Chalcopyrite Structure ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Beam Sputtering ◽  
Beam Currents

This study reports the successful preparation of Cu (In, Ga)Se2(CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ1018cm-3and mobility of 2.73cm2V-1s-1. The resulting film exhibited p-type conductivity.

A Consumers Report on Detection of 10 Nm Gold on Cell Surfaces: Selection of Fesem Type and Choice of Conductive Metal Coating

1997 ◽  
Vol 3 (S2) ◽  
pp. 1231-1232 ◽  
Author(s):  
S.L. Erlandsen ◽  
A.G. Bittermann ◽  
E. Osten ◽  
M. Coscio ◽  
C. Frethem
Keyword(s):  
Critical Point ◽  
Colloidal Gold ◽  
Ion Beam ◽  
Metal Coating ◽  
Human Neutrophils ◽  
Ion Beam Sputtering ◽  
Cell Surfaces ◽  
Signal Collection ◽  
Critical Point Drying ◽  
Beam Sputtering

Important parameters for the detection of small colloidal immunogold particles (10 nm) on cell surfaces include the use of field emission SEM (FESEM) and a need for a conductive metal coating to reduce charging, so as to facilitate backscatter electron (BSE) imaging for unambiguous identification by atomic number contrast. Recently Heinzmann et al (1) have reported the use of below-lens FESEM for detection of 10 nm colloidal gold at working distances of 6-13 mm, but achieved success only on uncoated cells as coating with a 1 nm layer of platinum appeared to mask the gold signal. To improve specimen conductivity and signal collection, three metals (Cr, Pt, W) have been used to generate thin coatings either by planar magnetron sputtering for cryoSEM or ion-beam sputtering for routine chemically-fixed, critical point dried samples (2,3)Three below-lens FESEM (Hitachi S-4500, JEOL 630land 63401, and LEO 982) were tested by using a sample of human neutrophils which had been chemically fixed, then immunostained for the surface antigen CD43 with 10 nm colloidal gold, and prepared by critical point drying.

scholarly journals Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

2017 ◽  
Vol 8 ◽  
pp. 12-20 ◽  
Author(s):  
Sergei N Chebotarev ◽  
Alexander S Pashchenko ◽  
Leonid S Lunin ◽  
Elena N Zhivotova ◽  
Georgy A Erimeev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
Growth Direction ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Spacer Layer ◽  
Gaas Barrier ◽  
Beam Sputtering ◽  
Impurity Doping

The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm−2 are formed. The technique of controlled doping of InAs/GaAs nanostructures using a SnTe solid-state source was proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots.

scholarly journals Morphology and Optical Investigations of InAs-QD/GaAs Heterostructures Obtained by Ion-Beam Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
S. N. Chebotarev ◽  
A. S. Pashchenko ◽  
V. A. Irkha ◽  
M. L. Lunina
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Beam Current ◽  
High Dispersion ◽  
Ion Beam Sputtering ◽  
Inas Quantum Dots ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Very High ◽  
A Current

A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of 150 eV leads to an expansion of average sizes of InAshut-quantum dots. According to atomic force and electron microscopy, photoluminescence, and capacity-voltage measurements it was found that an increase of ion-beam current from 60 to 120 μA at a temperature of 500°C and energy of 150 eV slightly enlarges the average sizes of quantum dots from 15 nm to 18 nm while their dispersion is about 30%. At a current of 180 μA a surface density is1.3·1011 cm−2, but under these conditions there is a very high dispersion of quantum dots up to 50%.

Sign in / Sign up

Export Citation Format

Share Document