Characterization of a Rapid Thermal Annealed TiNxOy/TiSi2 Barrier Layer

1990 ◽  
Vol 181 ◽  
Author(s):  
Sailesh Chittipeddi ◽  
Michael J. Kelly ◽  
Charles M. Dziuba ◽  
Anthony S. Oates ◽  
William T. Cochran
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Cmos Technology ◽  
Nitrogen Atmosphere ◽  
Titanium Film ◽  
Rapid Thermal Anneal ◽  
Tem Analysis ◽  
P Type

ABSTRACTIn this paper we characterize the thin film formed by rapid thermal anneal of a magnetron sputtered titanium film in a nitrogen atmosphere. The barrier properties of this material have been characterized for both n- and p-type junctions in our CMOS technology. We have characterized the physical properties of the film using Auger, RBS and TEM analysis in the same range of temperatures, and find that as the annealing temperature is increased a better quality TiNxOy film is formed. The electromigration characteristics for Aℓ/TiNxOy/TiSi2 runners, as well as the role that this system plays in minimizing failures due to stress induced voiding are examined in this study.

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers

2002 ◽  
Vol 17 (5) ◽  
pp. 1019-1023 ◽  
Author(s):  
S.J. Yang ◽  
T.W. Kang ◽  
T.W. Kim ◽  
K.S. Chung
Keyword(s):  
Layer Thickness ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Nitrogen Atmosphere ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Specific Contact ◽  
Potential Applications ◽  
Increasing Temperature ◽  
P Type

The dependences of the properties of Au/Ni/Si/Ni contacts, deposited on p-GaN epilayers by using electron-beam evaporation, on the Si layer thickness and the annealing temperature were investigated with the goal of producing contacts with low specific resistances. The results of the current–voltage (I–V) curves showed that the lowest specific contact resistance obtained for the Au/Ni/Si/Ni contact with a 1200-Å- thick Si layer on p-type GaN annealed at 700 °C for 1 min in a nitrogen atmosphere was 8.49 × 10-4 Ω cm2. The x-ray diffraction (XRD) measurements on the annealed Au/Ni/Si/Ni/p-GaN/sapphire heterostructure showed that Ni3Si, GaAu, and NiGa layers were formed at the Au/Ni/Si/Ni/p-GaN interfaces. While the intensities corresponding to the Ni3Si layer decreased with increasing annealing temperature above 700 °C, those related to the GaAu and the NiGa layers increased with increasing temperature. These results indicate that the Au/Ni/Si/Ni contacts with 1200-Å-thick Si layers annealed at 700 °C hold promise for potential applications in p-GaN-based optoelectronic devices.

scholarly journals Tailoring and Characterization of Porous hierarchical Nanostructured p Type Thin Film of Cu-Al-Oxide for the Detection of Pollutant Gases

2014 ◽  
Vol 87 ◽  
pp. 252-255 ◽  
Author(s):  
R. Kumar ◽  
C. Baratto ◽  
G. Faglia ◽  
G. Sberveglieri ◽  
K. Vojisavljevic ◽  
...  
Keyword(s):  
Thin Film ◽  
P Type ◽  
Pollutant Gases ◽  
Al Oxide

Structural Analysis of Au/Ti/Al/SiC Contacts in Dependence on the Initial Composition and Annealing

2010 ◽  
Vol 12 ◽  
pp. 55-63 ◽  
Author(s):  
Lilyana Kolaklieva ◽  
Roumen Kakanakov ◽  
Maya Marinova ◽  
Efstathios K. Polychroniadis
Keyword(s):  
Carrier Transport ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Strong Dependence ◽  
Initial Contact ◽  
Initial Composition ◽  
Tem Analysis ◽  
Optimal Annealing Temperature ◽  
Two Phases ◽  
P Type

The dependence of the structure and composition of nanolayered Au/Ti/Al ohmic contacts to p-type 4H-SiC on the initial Ti:Al ratio has been investigated. Two contact compositions, Au/Ti(70%)/Al(30%) and Au/Ti(30%)/Al(70%), have been studied regarding the electrical properties, structure, composition and annealing temperature in the interval 850 – 1000o C. The correlation between the electrical behaviour and structure of the annealed contacts is discussed. Very low resistivity of 1.42x10-5 .cm2 after annealing at 900o C has been obtained for the contact having an initial composition Ti:Al (30:70), while the lowest resistivity of 1.21x10-5 .cm2 has been measured for the contact with a composition Ti:Al (70:30) after annealing at 1000o C. Strong dependence of the contact structure on the Ti:Al ratio and annealing temperature, respectively, has been found out. A presence of two phases, Au2Ti and Al3Ti, in all contacts has been determined after annealing, despite the temperature value and Ti:Al ratio. The TEM analysis reveals that titanium and aluminum silicides and carbides are formed after annealing as the Ti:Al ratio affects the kind of silicides and carbides created. It is obtained that the initial composition of the deposited metal layers influences only the phase composition of the annealed contact but not the grain sizes of the dominant phases formed. The origin of the ohmic properties improvement is explained by the formation of Ti3SiC2 compound and/or enhanced carrier transport by the presence of metal spikes into SiC depending on the initial contact composition and as consequence the optimal annealing temperature.

scholarly journals Preparation and Characterization of Solution-Processed Nanocrystalline p-Type CuAlO2 Thin-Film Transistors

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Shuang Li ◽  
Xinan Zhang ◽  
Penglin Zhang ◽  
Xianwen Sun ◽  
Haiwu Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
P Type

Absorbance Studies of Perovskite CH3NH3PbI(3-x)Clx as Light Harvester in Solar Cell

2015 ◽  
Vol 1112 ◽  
pp. 282-285
Author(s):  
Prawistin Noorlaily ◽  
Maria Ulfa ◽  
Satria Zulkarnaen Bisri ◽  
Ferry Iskandar
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Annealing Temperature ◽  
Photovoltaic Cells ◽  
Synthesis Temperature ◽  
Synthesis And Characterization ◽  
Perovskite Materials ◽  
Hybrid Perovskite ◽  
Precursor Composition

Hybrid perovskite is one of the emerging materials which is currently being widely investigated for solar cells. Here we report the synthesis and characterization of perovskite compound which can be used as a light harvester in photovoltaic cells, which is CH3NH3PbI(3-x)Clx. The perovskite materials were synthesized using solution-based methods. Several parameters are investigated in the synthesis of CH3NH3PbI(3-x)Clx perovskite, which are the influence of precursor composition, synthesis temperature , precursor concentration, and the annealing temperature. These parameters are optimized against the absorbance and bandgap of the synthesized CH3NH3PbI(3-x)Clx thin film. The optimized perovskite thin film is obtained with excellent absorption capabilities for solar cell applications.

Fabrication and Characterization of Rapidly Oxidized p-Type Cu2O Films from Cu Films and their Application to Heterojunction Thin-Film Solar Cells

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MB17 ◽  
Author(s):  
Hyung Soo Kim ◽  
Jung Wook Lim ◽  
Sun Jin Yun ◽  
Min A Park ◽  
Se Yong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cu Films ◽  
Cu2o Films ◽  
Fabrication And Characterization ◽  
P Type
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