Optical Emission Spectroscopy and Laser Doppler Velocimetry for an RF Thermal Plasma CVD Process

1990 ◽  
Vol 190 ◽  
Author(s):  
T. Ishigaki ◽  
Y. Moriyoshi ◽  
I. Iwamoto
Keyword(s):  
Thermal Plasma ◽  
Emission Spectroscopy ◽  
Laser Doppler Velocimetry ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Laser Doppler ◽  
Doppler Velocimetry ◽  
Plasma Cvd ◽  
Rf Thermal Plasma

Deposition of a-SiNx Films by ArF Laser Induced CVD as Diagnosed by Optical Emission Spectroscopy

1987 ◽  
Vol 95 ◽  
Author(s):  
S. Nishikawa ◽  
H. Matsuhashi ◽  
T. Ishida ◽  
S. Ohno ◽  
S. Ushio
Keyword(s):  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Diffusion Length ◽  
Etching Rate ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Plasma Cvd ◽  
Deposition Parameters ◽  
Arf Laser

AbstractDeposition of SiNx films by ArF laser induced chemical vapor deposition has been investigated. The films exhibit excellent electrical properties; the high breakdown voltage and the low fixed charge are the same as in films deposited by LPCVD, but the BHF etching rate of them is larger by a factor about 4 than that prepared by the plasma CVD. The diffusion length of the radicals contributing to the deposition was estimated from the distribution of the deposition rate as a function of the deposition parameters. The optical emission from the radicals produced by ArF laser irradiation was also studied. Using these results, we discuss the mechanism of the deposition.

Optical emission spectroscopy diagnostic and thermodynamic analysis of thermal plasma enhanced nanocrystalline silicon CVD process

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 15131-15137 ◽  
Author(s):  
Tengfei Cao ◽  
Haibao Zhang ◽  
Binhang Yan ◽  
Wei Lu ◽  
Yi Cheng
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Thermal Equilibrium ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Nanocrystalline Silicon ◽  
Equilibrium Analysis

Optical emission spectroscopy and thermal equilibrium analysis were implemented to study the plasma enhanced chemical vapor deposition of nanocrystalline silicon.

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