Atomic Layer Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
Akira Usui
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Cycle Growth ◽  
High Uniformity ◽  
Recent Developments ◽  
Potential Applications ◽  
Fine Structures ◽  
Order Structures

ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic

Selective area growth at multi-atomic-height steps arranged on GaAs (111)A vicinal surfaces by atomic layer epitaxy

1997 ◽  
Vol 112 ◽  
pp. 132-137 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Hideo Isshiki ◽  
Takuo Sugano ◽  
Yoshinobu Aoyagi
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Vicinal Surfaces ◽  
Selective Area ◽  
Area Growth

Recent Progress in Atomic Layer Epitaxy of III–V Compounds

1991 ◽  
Vol 222 ◽  
Author(s):  
S. M. Bedair
Keyword(s):  
Quantum Wells ◽  
Recent Progress ◽  
Atomic Layer ◽  
Reactor Design ◽  
Ternary Alloys ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy ◽  
Ordered Alloys ◽  
Potential Applications

ABSTRACTThe potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET's and HBT's. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

Selective-Area Growth of Self-Assembled InAs-QDs by Metal Mask Method for Optical Integrated Circuit Applications

2006 ◽  
Vol 959 ◽  
Author(s):  
Nobuhiko Ozaki ◽  
Yoshiaki Takata ◽  
Shunsuke Ohkouchi ◽  
Yoshimasa Sugimoto ◽  
Naoki Ikeda ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Optical Devices ◽  
Selective Area Growth ◽  
Peak Wavelength ◽  
Metal Mask ◽  
Selective Area ◽  
High Uniformity ◽  
All Optical ◽  
Area Growth ◽  
Self Assembled

ABSTRACTWe have developed a selective-area-growth (SAG) method of self-assembled InAs quantum dots (QDs) using a metal-mask (MM) combined with molecular beam epitaxy for realizing photonic crystal (PC) based ultra-small and ultra-fast all-optical devices (PC-SMZ and PC-FF). Successful SAG of QDs was confirmed by atomic-force-microscopy observations and photoluminescence (PL) measurements. High density and high uniformity comparable to those of conventional QDs grown without the MM were achieved; the QD density was 4 × 1010cm-2 and a linewidth of the PL peak was around 30meV at room temperature. In addition, insertion of a strain-reducing layer on the grown QD was effective for varying the PL peak wavelength of the QD from 1240nm to 1320nm without any extra optical degradation. The MM method reported here is promising for achieving the all optical devices, PC-SMZ and PC-FF, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.

Selective area epitaxy of GaAs on Si using atomic layer epitaxy by LP-MOVPE

1991 ◽  
Vol 107 (1-4) ◽  
pp. 129-135 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
E.H. Lingunis ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Selective Area Epitaxy ◽  
Gaas On Si ◽  
Selective Area

Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates

2001 ◽  
Vol 79 (11) ◽  
pp. 1709-1711 ◽  
Author(s):  
M. Yan ◽  
Y. Koide ◽  
J. R. Babcock ◽  
P. R. Markworth ◽  
J. A. Belot ◽  
...  
Keyword(s):  
Soft Lithography ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Patterned Substrates ◽  
Selective Area

Recent Developments of Ambulatory Assessment Methods

2014 ◽  
Vol 25 (4) ◽  
pp. 279-287 ◽  
Author(s):  
Stefan Hey ◽  
Panagiota Anastasopoulou ◽  
André Bideaux ◽  
Wilhelm Stork
Keyword(s):  
Real Time ◽  
Information And Communication Technologies ◽  
New Technologies ◽  
Psychological Research ◽  
Ambulatory Assessment ◽  
Emotional States ◽  
Recent Developments ◽  
Potential Applications ◽  
Information And Communication ◽  
Physiological Sensors

Ambulatory assessment of emotional states as well as psychophysiological, cognitive and behavioral reactions constitutes an approach, which is increasingly being used in psychological research. Due to new developments in the field of information and communication technologies and an improved application of mobile physiological sensors, various new systems have been introduced. Methods of experience sampling allow to assess dynamic changes of subjective evaluations in real time and new sensor technologies permit a measurement of physiological responses. In addition, new technologies facilitate the interactive assessment of subjective, physiological, and behavioral data in real-time. Here, we describe these recent developments from the perspective of engineering science and discuss potential applications in the field of neuropsychology.

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