Ion-Irradiation Study of the “Exotic” Mineral Neptunite: LiNa2K(Fe,Mg,Mn)2Ti2Si8O24

1990 ◽  
Vol 201 ◽  
Author(s):  
Ray K. Eby ◽  
L. M. Wang ◽  
G. W. Arnold ◽  
R. C. Ewing
Keyword(s):  
Surface Layer ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Amorphous Layer ◽  
Narrow Region ◽  
Transmission Electron ◽  
Room Temperature Aging ◽  
Transparent Region ◽  
Amorphous Surface ◽  
Temperature Aging

AbstractSingle crystals of the silicate neptunite were irradiated with 600 keV Ar2+ and 1.5 MeV Kr+ and analysed by transmission electron microscopy. Amorphization was observed in a surface layer several hundred angstroms thick following Ar2+ irradiations up to 5.0×l013 Ar/cm2, yet the Ar2+ ions travelled an average of 1/2 μm in depth. The microstructure of the amorphous surface layer depends on the ion fluence, but the amorphous layer thickness remained constant. At the highest fluence, a narrow region below the amorphous layer shows a brittle-to-ductile strain transition, due to tensional volume-expansion of the adjacent ductile amorphous layer. With 1.5 MeV Kr1+, amorphization of the electron transparent region was completed after a fluence of 1.7×l014 Kr+/cm2, and no further damage was observed up to 5.1×1015 Kr+/cm2. However, following a low fluence of 2.0×1011 Kr+/cm2, a single crystal of neptunite became a polycrystalline aggregate (grain size 10 nm) within 7 days of room temperature aging.

Ion Beam Induced Epitaxial Crystallization of Single Crystalline 6H-SiC

1993 ◽  
Vol 321 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
E. Glaser
Keyword(s):  
Surface Layer ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Single Crystalline ◽  
Epitaxial Crystallization ◽  
Amorphous Surface ◽  
20 Nm ◽  
First Time

ABSTRACTFor the first time, ion beam induced epitaxial crystallization (IBIEC) has been found in SiC. The effect of 300 keV Si+ irradiation through an amorphous surface layer in single crystalline 6H-SiC at 477+5°C has been investigated by RBS/C and XTEM. A shrinkage of the amorphous layer was found after ion irradiation at this temperature which is caused by both an ion dose independent thermal regrowth of about 20 nm and an additional ion beam induced epitaxial crystallization with a rate of about 1.5 nm/ 1016 cm−2.

Ion Beam Induced Epitaxial Crystallization of Single Crystalline 6H-SiC

1993 ◽  
Vol 316 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
E. Glaser
Keyword(s):  
Surface Layer ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Single Crystalline ◽  
Epitaxial Crystallization ◽  
Amorphous Surface ◽  
20 Nm ◽  
First Time

ABSTRACTFor the first time, ion beam induced epitaxial crystallization (IBIEC) has been found in SiC. The effect of 300 keV Si+ irradiation through an amorphous surface layer in single crystalline 6H-SiC at 477±5°C has been investigated by RBS/C and XTEM. A shrinkage of the amorphous layer was found after ion irradiation at this temperature which is caused by both an ion dose independent thermal regrowth of about 20 nm and an additional ion beam induced epitaxial crystallization with a rate of about 1.5 nm/ 1016 cm-2.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

scholarly journals Carbon Nanofibers from Carbon Nanotubes by 1.2 keVAr+Sputtering at Room Temperature

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Shuang-Xi Xue ◽  
Qin-Tao Li ◽  
Xian-Rui Zhao ◽  
Qin-Yi Shi ◽  
Zhi-Gang Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Carbon Nanofibers ◽  
Carbon Nanoparticles ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Transmission Electron ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes ◽  
Carbon Nanowires

Multi-walled carbon nanotubes (MWCNTs) were irradiated by 1.2 keV Ar ion beams for 15–60 min at room temperature with current density of 60 µA/cm2. The morphology and microstructure are investigated by scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. The results show that carbon nanofibers are achieved after 60 min ion irradiation and the formation of carbon nanofibers proceeds through four periods, carbon nanotubes—amorphous carbon nanowires—carbon nanoparticles along the tube axis—conical protrusions on the nanoparticles surface—carbon nanofibers from the conical protrusions.

scholarly journals Effects of Room Temperature Aging on Adhesion of Electroless Plating Film on Silicon Using Gold Nanoparticle Catalysts

2019 ◽  
Vol 70 (3) ◽  
pp. 174-176
Author(s):  
Yuichi TAKASAKA ◽  
Ryo FUJII ◽  
Naoki YAMADA ◽  
Naoki FUKUMURO ◽  
Susumu SAKAMOTO ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Electroless Plating ◽  
Room Temperature ◽  
Nanoparticle Catalysts ◽  
Room Temperature Aging ◽  
Temperature Aging

scholarly journals Effects of various pre-treatments and cold rolling on room temperature aging of 6000 series aluminum alloys

2009 ◽  
Vol 59 (5) ◽  
pp. 254-260
Author(s):  
Takahiko Nakamura ◽  
Kenji Muramatsu ◽  
Masanori Nagai ◽  
Ryouhei Otsu ◽  
Shin-ya Komatsu
Keyword(s):  
Aluminum Alloys ◽  
Cold Rolling ◽  
Room Temperature ◽  
Room Temperature Aging ◽  
Temperature Aging

Room-temperature aging of hydrogen in α-Fe after cathodic charging

1991 ◽  
Vol 22 (1) ◽  
pp. 261-264
Author(s):  
K. F. Ha ◽  
Y. Liu ◽  
Z. Z. An
Keyword(s):  
Room Temperature ◽  
Room Temperature Aging ◽  
Temperature Aging ◽  
Cathodic Charging

scholarly journals Ion-Irradiation-Induced Amorphization Of Cadmium Niobate Pyrochlore

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
K. Beaty ◽  
L. A. Boatner ◽  
C. W. White
Keyword(s):  
Electron Microscope ◽  
Ambient Temperature ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Ex Situ ◽  
Temperature Dependent ◽  
Transmission Electron ◽  
Ion Energies

ABSTRACTIrradiation-induced amorphization of Cd2Nb2O7 pyrochlore was investigated by means of in-situ temperature-dependent ion-irradiation experiments in a transmission electron microscope, combined with ex-situ ion-implantation (at ambient temperature) and RBS/channeling analysis. The in-situ experiments were performed using Ne or Xe ions with energies of 280 and 1200 keV, respectively. For the bulk implantation experiments, the incident ion energies were 70 keV (Ne+) and 320 keV (Xe2+). The critical amorphization temperature for Cd2Nb2O7 is ∼480 K (280 keV Ne+) or ∼620 K (1200 keV Xe2+). The dose for in-situ amorphization at room temperature is 0.22 dpa for Xe2+, but is 0.65 dpa for Ne+ irradiation. Both types of experiments suggest a cascade overlap mechanism of amorphization. The results were analyzed in light of available models for the crystalline-to-amorphous transformation and were compared to previous ionirradiation experiments on other pyrochlore compositions.

Sn Whisker Growth in Cu(Top)-Sn(Bottom) Bilayer System upon Room Temperature Aging

2013 ◽  
Vol 785-786 ◽  
pp. 918-923 ◽  
Author(s):  
Lin Huang ◽  
Xue Nian Lin ◽  
Ren Wu Chen ◽  
Jiang Yong Wang
Keyword(s):  
Room Temperature ◽  
Whisker Growth ◽  
X Ray Diffraction ◽  
Sn Whisker ◽  
X Ray ◽  
Bilayer System ◽  
Room Temperature Aging ◽  
Sublayer Thickness ◽  
Temperature Aging ◽  
Scanning Electron

The Sn whisker growth in Cu(top)-Sn(bottom) bilayer system upon room temperature aging was investigated by scanning electron microscope and X-ray diffraction techniques. The experimental observations indicate that the Sn whisker growth on the Cu surface in Cu-Sn bilayer system is different from that on the Sn surface in Sn-Cu bilayer system. When the Sn sublayer thickness is less than 0.5μm, the Sn whisker growth can take place in Cu-Sn system but not in Sn-Cu system. An explanation for Sn whisker growth in Cu-Sn bilayer system is given.

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