scholarly journals Ion-Irradiation-Induced Amorphization Of Cadmium Niobate Pyrochlore

2000 ◽  
Vol 650 ◽  
Author(s):  
A. Meldrum ◽  
K. Beaty ◽  
L. A. Boatner ◽  
C. W. White
Keyword(s):  
Electron Microscope ◽  
Ambient Temperature ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Ex Situ ◽  
Temperature Dependent ◽  
Transmission Electron ◽  
Ion Energies

ABSTRACTIrradiation-induced amorphization of Cd2Nb2O7 pyrochlore was investigated by means of in-situ temperature-dependent ion-irradiation experiments in a transmission electron microscope, combined with ex-situ ion-implantation (at ambient temperature) and RBS/channeling analysis. The in-situ experiments were performed using Ne or Xe ions with energies of 280 and 1200 keV, respectively. For the bulk implantation experiments, the incident ion energies were 70 keV (Ne+) and 320 keV (Xe2+). The critical amorphization temperature for Cd2Nb2O7 is ∼480 K (280 keV Ne+) or ∼620 K (1200 keV Xe2+). The dose for in-situ amorphization at room temperature is 0.22 dpa for Xe2+, but is 0.65 dpa for Ne+ irradiation. Both types of experiments suggest a cascade overlap mechanism of amorphization. The results were analyzed in light of available models for the crystalline-to-amorphous transformation and were compared to previous ionirradiation experiments on other pyrochlore compositions.

In situ transmission electron microscope measurements of solid Al-solid Pb and solid Al-liquid Pb surface-energy anisotropy in rapidly solidified Al-5% Pb (by mass)

1987 ◽  
Vol 414 (1847) ◽  
pp. 499-507 ◽  
Keyword(s):  
Electron Microscope ◽  
Melting Point ◽  
Surface Energy ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Transmission Electron ◽  
Increasing Temperature ◽  
Rapidly Solidified ◽  
Al Matrix

Alloys of Al-5% Pb and Al-5% Pb-0.5% Si (by mass) have been manufactured by rapid solidification and then examined by transmission electron microscopy. The rapidly solidified alloy microstructures consist of 5-60 nm Pb particles embedded in an Al matrix. The Pb particles have a cube-cube orientation relation with the Al matrix, and are cub-octahedral in shape, bounded by {100} Al, Pb and {111} Al, Pb facets. The equilibrium Pb particle shape and therefore the anisotropy of solid Al-solid Pb and solid Al-liquid Pb surface energies have been monitored by in situ heating in the transmission electron microscope over the temperature range between room temperature and 550°C. The ani­sotropy of solid Al-solid Pb surface energy is constant between room temperature and the Pb melting point, with a {100} Al, Pb surface energy about 14% greater than the {111} Al, Pb surface energy, in good agreement with geometric near-neighbour bond energy calculations. The {100} AI, Pb facet disappears when the Pb particles melt, and the anisotropy of solid Al-liquid Pb surface energy decreases gradually with increasing temperature above the Pb melting point, until the Pb particles become spherical at about 550°C.

Coalescence between Au nanoparticles as induced by nanocurvature effect and electron beam athermal activation effect

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7978-7983 ◽  
Author(s):  
Liang Cheng ◽  
Xianfang Zhu ◽  
Jiangbin Su
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Electron Beam Irradiation ◽  
Au Nanoparticles ◽  
Beam Irradiation ◽  
Activation Effect ◽  
Transmission Electron

The coalescence of two single-crystalline Au nanoparticles on surface of amorphous SiOxnanowire, as induced by electron beam irradiation, wasin situstudied at room temperature in a transmission electron microscope.

Crystalline to Amorphous Transformation of Fe3B By 1 MeV Electron Irradiation

1981 ◽  
Vol 7 ◽  
Author(s):  
A. Mogro-Campero ◽  
E.L. Hall ◽  
J.L. Walter ◽  
A.J. Ratkowski
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Rapid Quenching ◽  
Al Alloy ◽  
Bright Field ◽  
Transmission Electron ◽  
Diffraction Patterns

ABSTRACTSpecimens of amorphous Fe75B25 produced by rapid quenching from the melt were annealed to complete crystallization and subjected to 1 MeV electron irradiation in a transmission electron microscope at room temperature and at 130 K. The irradiation was interrupted at various intervals in order to obtain bright field images and diffraction patterns. The Fe3B crystals did not become amorphous at room temperature, even after damage levels of several dpa, whereas at 130 K the crystalline to amorphous transformation was observed to be complete at damage levels below 1 dpa. The results are combined with those of ion irradiation work on Fe3B; qualitative agreement is found between Fe3B and previous work on the Zr3Al alloy concerning their response to displacement damage by electron and ion irradiation.

scholarly journals Edge-On Ion Irradiation of Electron Microscope Specimens

1992 ◽  
Vol 268 ◽  
Author(s):  
Mauro P. Otero ◽  
Charles W. Allen
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Ion Irradiation ◽  
Special Technique ◽  
Plan View ◽  
Depth Direction ◽  
Transmission Electron ◽  
Foil Specimen

ABSTRACTA special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect to the irradiation. The results of amorphization of Si, irradiated in this orientation by 1 or 1.5 MeV Kr, are presented and briefly compared with the usual plan view observations. The limitations of the technique are discussed and several experiments which might profitably employ this technique are suggested.

In situ Transmission Electron Microscope observations of mesotaxial silicide formation in the CoSi2/Si system

1989 ◽  
Vol 47 ◽  
pp. 452-453
Author(s):  
R. Hull ◽  
A.E. White ◽  
K.T. Short ◽  
S.M. Yalisove ◽  
D. Loretto
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ex Situ ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Plan View ◽  
Silicide Layer ◽  
Transmission Electron ◽  
In Situ Experiments

A new technique for synthesis of buried epitaxial metal silicide layers in Si (“mesotaxy”) by high-dose implantation of Co and Ni into Si surfaces has been developed. Subsequent to implantation at energies in the few hundred keV range and doses in the 1017Cm−2 regime, thermal annealing at temperatures up to 1000°C results in the formation of well-defined and relatively high quality Si/metal disilicide/Si structures.The exact implantation and processing conditions are crucial in determining the structure and quality of the buried silicide layer. In this work, we describe transmission electron microscope experiments which illuminate the silicide formation process both by static studies of as-implanted and annealed structures, and dynamical in-situ experiments where as-implanted structures are annealed inside the microscope to mimic the ex-situ annealing conditions. The structure geometry in these materials turns out to be close to ideal for such in-situ experimentation: typical implantation conditions for formation of a contiguous silicide layer result in tlqe metal layers being of the order a few hundred to a thousand Å and buried about 600-1000 Å below the Si surface. In-situ annealing in the plan-view geometry inhibits surface diffusion across the interfaces, which would be expected in the cross-sectional geometry (5). The typical penetration depths attainable in Si with 200 keV electrons, say ~ 1 micron, allow a significant thickness, hsubthin of Si substrate below the metal layer, thickness hm, to be retained during the in-situ experiment such that hm ≪hsubthin. This is important, as it ensures that the film stress condition (which arises because of the difference in bulk lattice parameters between the Si and metal silicide layers) is reasonably representative of the stress conditions relevant for the case of annealing on the unthinned substrate.

Exploring Photothermal Pathways via in Situ Laser Heating in the Transmission Electron Microscope: Recrystallization, Grain Growth, Phase Separation, and Dewetting in Ag0.5Ni0.5 Thin Films

2018 ◽  
Vol 24 (6) ◽  
pp. 647-656 ◽  
Author(s):  
Yueying Wu ◽  
Chenze Liu ◽  
Thomas M. Moore ◽  
Gregory A. Magel ◽  
David A. Garfinkel ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Phase Separation ◽  
Grain Growth ◽  
Transmission Electron Microscope ◽  
Growth Phase ◽  
Continuous Wave ◽  
Optical Power ◽  
Ex Situ ◽  
Transmission Electron

AbstractA new optical delivery system has been developed for the (scanning) transmission electron microscope. Here we describe the in situ and “rapid ex situ” photothermal heating modality of the system, which delivers >200 mW of optical power from a fiber-coupled laser diode to a 3.7 μm radius spot on the sample. Selected thermal pathways can be accessed via judicious choices of the laser power, pulse width, number of pulses, and radial position. The long optical working distance mitigates any charging artifacts and tremendous thermal stability is observed in both pulsed and continuous wave conditions, notably, no drift correction is applied in any experiment. To demonstrate the optical delivery system’s capability, we explore the recrystallization, grain growth, phase separation, and solid state dewetting of a Ag0.5Ni0.5 film. Finally, we demonstrate that the structural and chemical aspects of the resulting dewetted films was assessed.

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