Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates

1990 ◽  
Vol 202 ◽  
Author(s):  
T. P. Humphreys ◽  
Hyeongtag Jeon ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam ◽  
Thermal Evaporation ◽  
Three Dimensional ◽  
Electron Beam Evaporation ◽  
Tungsten Filament ◽  
Growth Modes ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTIn the present study epitaxial Ni(001) films have been grown on natural C(001) substrates (type la and Ha) and homoepitaxial C(001) films. Two deposition techniques including electron-beam evaporation of Ni in a molecular beam epitaxy (MBE) system and evaporation of Ni from a resistively heated tungsten filament have been employed. As evidenced by scanning electron microscopy (SEM), the Ni films deposited by electron-beam evaporation were found to replicate the very fine, unidirectional scratches present on the as polished C(001) substrates. Indeed, the coverage and uniformity of the deposited films would imply a two-dimensional (2-D) growth mode. In comparison, the thermal evaporation of Ni on C(001) substrates results in a highly textured and faceted surface morphology indicative of three-dimensional (3–D) nucleation and growth. Moreover, Rutherford backscattering/channeling measurements have demonstrated that the Ni(001) films deposited by electron-beam evaporation are of superior crystalline quality. Differences in the observed microstructure and apparent growth modes of the epitaxial Ni(001) films have been attributed to the presence of oxygen incorporation in those layers deposited by thermal evaporation.

Thickness dependent electrical characterization of electron beam evaporated n-type CdSe thin films

2010 ◽  
Vol 7 (2) ◽  
pp. 495-498
Author(s):  
S. R. Vishwakarma ◽  
Aneet Kumar Verma ◽  
Ravishankar Nath Tripathi ◽  
Rahul. Rahul
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Different Thickness ◽  
Deposited Films

The prepared starting materials has composition Cd0.60Se0.40 was used to fabrication of thin films. Cadmium selenide thin films of different thickness (400nm-700nm) deposited by electron beam evaporation technique on well cleaned glass substrate at substrate temperature 300 K. The X-ray diffraction pattern confirmed that the prepared thin films of composition Cd 0.60Se 0.40 has polycrystalline in nature. The resistivity, conductivity, Hall mobility, carrier concentration of the deposited films were calculated of different films thickness..

The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

2003 ◽  
Vol 796 ◽  
Author(s):  
Prabhakar Bandaru ◽  
Subal Sahni ◽  
Eli Yablonovitch ◽  
Hyung-Jun Kim ◽  
Ya-Hong Xie
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Si Substrates ◽  
Surface Hydrogen ◽  
Growth Modes ◽  
Device Properties ◽  
Cmos Processing

ABSTRACTWe report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

Characterization of Gd[sub 2]O[sub 3] Films Deposited on Si(100) by Electron-Beam Evaporation

2001 ◽  
Vol 148 (2) ◽  
pp. G29 ◽  
Author(s):  
D. Landheer ◽  
J. A. Gupta ◽  
G. I. Sproule ◽  
J. P. McCaffrey ◽  
M. J. Graham ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

Characterization of Deposited Films and the Electron Beam Generated in the Pulsed Plasma Deposition Gun

2011 ◽  
Vol 50 (8S1) ◽  
pp. 08JD03 ◽  
Author(s):  
Dmitry Yarmolich ◽  
Petr Nozar ◽  
Svetlana Gleizer ◽  
Yakov E. Krasik ◽  
Giuseppe Mittica ◽  
...  
Keyword(s):  
Electron Beam ◽  
Plasma Deposition ◽  
Pulsed Plasma ◽  
Pulsed Plasma Deposition ◽  
Deposited Films

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

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