COMPOSITION AND NANOHARDNESS OF SiC FILMS DEPOSITED BY ELECTRON BEAM PHYSICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1910-1915 ◽  
Author(s):  
MIN TENG ◽  
XIAODONG HE ◽  
YUE SUN
Keyword(s):  
Electron Beam ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Current Intensity ◽  
X Ray ◽  
Deposited Films ◽  
Sic Films

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

5MeV Si Ion Modification on Thermoelectric SiO2/SiO2+Cu Multilayer Films

2011 ◽  
Vol 1354 ◽  
Author(s):  
C. Smith ◽  
S. Budak ◽  
T. Jordan ◽  
J. Chacha ◽  
B. Chhay ◽  
...  
Keyword(s):  
Electron Beam ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Ion Bombardment ◽  
Multilayer Films ◽  
Binding Energies ◽  
X Ray ◽  
Available Energy ◽  
Energy States

AbstractWe prepared samples by electron beam physical vapor deposition EB-PVD followed by ion bombardment. The samples were than characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS). PL was used to characterize the available energy states. XPS was used to determine the binding energies. The ML’s are comprised of 100 alternating layers of SiO2/SiO2+Cu.

Deposition of Cobalt Doped Zinc Oxide Thin Film Nano-Composites Via Pulsed Electron Beam Ablation

MRS Advances ◽  
2016 ◽  
Vol 1 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Asghar Ali ◽  
Patrick Morrow ◽  
Redhouane Henda ◽  
Ragnar Fagerberg
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
Deposited Films

AbstractThis study reports on the preparation of cobalt doped zinc oxide (Co:ZnO) films via pulsed electron beam ablation (PEBA) from a single target containing 20 w% Co on sapphire (0001) and silicon (100) substrates. The films have been deposited at various temperatures (350оC, 400оC, 450оC) and pulse frequencies (2 Hz, 4 Hz), under a background argon (Ar) pressure of about 3 mtorr, and an accelerating voltage of 14 kV. The surface morphology has been examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). According to SEM analysis, the films consist of nano-globules whose size is in the range of 80-178 nm. Energy dispersive x-ray spectroscopy (EDX) reveals that deposition is congruent and the prepared films contain ∼20±5 w% cobalt. It has been found that the nano-globules in the deposited films are cobalt-rich zones containing ∼70 w% Co. From x-ray photoelectron spectroscopy (XPS) analysis, Co 2p3/2 peaks indicate that the deposited films contain CoO (binding energy = 780.5 eV) as well as metallic Co (binding energy = 778.1-778.5 eV). X-ray diffraction (XRD) analysis supports the presence of metallic Co hcp phase (2ϴ = 44.47° and 47.43°) in the films.

Effect of Cu Content on the Tribological Performance of Cr-N Coatings at High Temperatures (840°C)

2009 ◽  
Author(s):  
Kyriaki Polychronopoulou ◽  
Claus Rebholz ◽  
Nicholaos G. Demas ◽  
Andreas A. Polycarpou ◽  
P. N. Gibson
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Content ◽  
Glancing Angle ◽  
Scanning Electron ◽  
Ball On Disc

Cr-N and Cu-Cr-N coatings with Cu content between 3–65 at.%, Cu/Cr ratios in the 0.04–4.5 range and 21–27 at.% N, synthesized by twin e-beam Physical Vapor Deposition (EBPVD) at 450°C, were investigated. Using X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (GAXRD) and scanning electron microscopy (SEM), in combination with nanoindentation mechanical property measurements and laboratory controlled ball-on-disc sliding experiments, it is shown that Cu-Cr-N coatings with low Cu content (3 at.%) possess sufficient wear resistance for high temperature demanding tribological applications.

Tribological Study of Microbearings for MEMS Applications

2005 ◽  
Vol 127 (3) ◽  
pp. 537-547 ◽  
Author(s):  
Daejong Kim ◽  
Dongmei Cao ◽  
Michael D. Bryant ◽  
Wenjin Meng ◽  
Frederick F. Ling
Keyword(s):  
Contact Pressure ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Physical Vapor Deposition ◽  
Wear Test ◽  
Tribological Characteristics ◽  
High Wear Resistance ◽  
X Ray ◽  
Developed Surface

Microsleeve bearings intended for microrotational machinery were fabricated by X-ray lithography and Ni electroplating. Coated to the working surfaces of the bearings was a 900nm thick uniform tungsten hydrocarbon (W–C:H) coating using an inductively coupled plasma (ICP) assisted, hybrid chemical vapor deposition (CVD)/physical vapor deposition (PVD) tool. Tribological characteristics and mechanical properties of as-electrodeposited Ni microbearings, annealed Ni microbearings at 800°C, and W–C:H coated microbearings were investigated. Potential applications of the microbearings may involve very light contact pressure (5-30MPa) and high sliding speed, such as micromotors and microturbines. Conventional pin-on disk test methods on top flat surfaces, (001) planes, cannot effectively predict tribological characteristics because these microbearings use the sidewall (110 plane) as a working surface. A special micro wear tester and friction tester were developed. Surface morphologies of new and worn bearing surfaces were studied using SEM. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) characterized the W–C:H coated microbearings. Test results of the W–C:H coated microbearings (wear characteristics and friction) are also presented. W–C:H coated microbearings had much lower wear rate than uncoated bearings. During the wear test, a transfer layer formed on the counter steel shaft even under very small contact pressure, leading to low steady state friction and high wear resistance.

Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition

1996 ◽  
Vol 11 (12) ◽  
pp. 3017-3023 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
P. Favia
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Air Oxidation ◽  
X Ray ◽  
Silicon Carbon

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

GIAXD and XPS Characterization of sp3C Doped SiC Superhard Nanocomposite Film

2012 ◽  
Vol 512-515 ◽  
pp. 971-974
Author(s):  
Jian Yi ◽  
Xiao Dong He ◽  
Yue Sun ◽  
Zhi Peng Xie ◽  
Wei Jiang Xue ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Grazing Incidence ◽  
Nanocomposite Films ◽  
Second Phase ◽  
X Ray ◽  
Xps Characterization ◽  
Ss Substrates ◽  
Sic Film

The sp3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD). The sp3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD), and X-ray photoelectron spectroscopy (XPS). The results of GIAXD showed that the sp3 doped SiC nanocomposite films were not perfect crystalline, which was composed with fine SiC nanocrystals, and a second phase very similar with diamond like carbon (DLC). XPS analysis showed that the excess C existing in films and turned from diamond into DLC from the surface to inner of film.

Pulsed Plasma Enhanced Chemical Vapor Deposition from CH2F2, C2H2F4, and CHCIF2

1998 ◽  
Vol 511 ◽  
Author(s):  
Catherine B. Labelle ◽  
Kenneth K. S. Lau ◽  
Karen K. Gleason
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Pulsed Plasma ◽  
Dielectric Measurements ◽  
X Ray ◽  
Hexafluoropropylene Oxide ◽  
Deposited Films

ABSTRACTPulsed plasma enhanced chemical vapor deposition films have been grown from C2H2F4, CH2F2, and CHCLF2. C-Is x-ray photoelectron spectroscopy (XPS) indicates a prevalence of C-CF species in the films from C2H2F4 and CH2F2, whereas CF2 species dominate the films from CHC1F2. The CFx species distributions for the films are largely controlled by the competition between CF2-producing and HF elimination reactions in the pulsed plasmas. Dominance by HF elimination produces films with high C-CF and CF concentrations (e.g., CH2F2), whereas dominance by CF2-producing reactions leads to films with higher CF2 concentrations (e.g., CHCIF2). The % CF3 in the film is lowest for the precursor having the lowest F:H ratio, CH2F2. Little or no hydrogen was detected in the deposited films. Thermal degradation of films from C2H2F4 and CH2F2, as probed by solid-state nuclear magnetic resonance (NMR) spectroscopy, shows a loss through CF3 detachment and HF elimination. Pulsed plasma films from all three precursors gave dielectric constants of 2.4, with loss tangents on the order of 10−2. Dielectric measurements of pulsed plasma films from hexafluoropropylene oxide (HFPO) gave a dielectric constant of 2.0 ± 0.1 with a loss tangent of 0.009.

Synthesis and characterization of B–C–N compounds on molybdenum

1999 ◽  
Vol 14 (3) ◽  
pp. 1137-1141 ◽  
Author(s):  
Jie Yu ◽  
E. G. Wang ◽  
Guichang Xu
Keyword(s):  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Synthesis And Characterization ◽  
Boron Carbonitride ◽  
X Ray ◽  
Hot Filament ◽  
N Compounds

B–C–N compounds were prepared on molybdenum by means of bias-assisted hot filament chemical vapor deposition (HFCVD). Effect of the substrate temperature (Ts) on the growth of B–C–N films has been investigated systematically by x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) based on the detailed analysis and calculation of the XPS. The substrate temperature plays a key role in the formation of the bonding states, the composition, and the surface morphology. Boron carbonitride is the main phase at all depositing temperatures, and the obtained compounds are as follows: B0.83C0.17 + B0.39C0.35N0.26 at 873 K, B0.30C0.34N0.36 at 973 K, B0.64C0.36 + B0.51C0.23N0.26 at 1073 K, B0.51C0.31N0.18 at 1173 K, and B0.37C0.54N0.09 at 1273 K.

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