MOCVD of GaN Using Diethylgalliumazide and Ammonia

1990 ◽  
Vol 204 ◽  
Author(s):  
Kwok-L. Ho ◽  
Klavs F. Jensen ◽  
Jen-W. Hwang ◽  
John F. Evans ◽  
Wayne L. Gladfelter
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Smooth Surface ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Interferometry ◽  
Optical And Electrical Properties ◽  
Sapphire Substrates

ABSTRACTGaN thin films have been deposited on Si and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using diethylgalliumazide and ammonia. Films were grown in the temperature range of 500-750°C. Growth rates were monitored in situ using laser interferometry. The addition of ammonia enhanced the growth rate significantly. At high temperatures, gas-phase depletion of the precursor reduced the growth rate of GaN. Films grown on (0001)-oriented sapphire substrates at temperatures above 650°C were highly textured with smooth surface morphology. Optical and electrical properties of the films are discussed and compared to those of films grown using conventional Ga and N sources.

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

2006 ◽  
Vol 955 ◽  
Author(s):  
Jinqiao Xie ◽  
Yi Fu ◽  
Hadis Morkoç
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates ◽  
Control Samples

ABSTRACTGaN layers on sapphire substrates were grown by metalorganic chemical vapor deposition using in situ porous SiNx nano-network. Crystalline quality of epilayers was characterized by X-ray rocking curve scans, and the full width at hall maximum values for (002) and (102) diffractions were improved from 252 arc sec and 405 arc sec, respectively, in control samples to 216 arc sec and 196 arc sec when SiNx was used. Ni/Au Schottky diodes (SDs) were fabricated and the SD performance was found to be critically dependent on the SiNx coverage (fewer and farther the pores the better the results) which is consistent with the trends of XRD and photoluminescence data. A 1.13eV barrier height was achieved when 5min SiNx layer was used compared with 0.78 eV without any SiNx nanonetwork. Furthermore, the breakdown voltage improved from 76 V to 250V when SiNx nanonetwork was used in otherwise identical structures.

High-Gain, High-Speed ZnO MSM Ultraviolet Photodetectors

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
C. R. Gorla ◽  
S. Liang ◽  
N. Emanetoglu ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
High Speed ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Gain ◽  
Zno Films ◽  
High Quality ◽  
Sapphire Substrates ◽  
Ultraviolet Photodetectors

AbstractHigh quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range 350-600°C. In-situ nitrogen compensation doping was performed using NH3. The metalsemiconductor-metal ultraviolet-sensitive photodetectors were fabricated on nitrogencompensation-doped epitaxial ZnO films. The photoresponsivity of these devices exhibits a linear dependence upon bias voltage up to 10 V, with a photoresponsivity of 400 A/W at 5 V. The rise and fall times are 1 and 1.5 μs, respectively.

MOCVD growth of GaN on flat and misoriented A-plane sapphire substrates

2001 ◽  
Vol 680 ◽  
Author(s):  
T. Someya ◽  
K. Hoshino ◽  
Y. Arakawa
Keyword(s):  
Surface Morphology ◽  
Vapor Deposition ◽  
Smooth Surface ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Sapphire Substrates ◽  
Mocvd Growth ◽  
Misorientation Angles ◽  
Metalorganic Chemical

ABSTRACTWe have grown high-quality GaN with smooth surface morphology on vicinal a-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The misorientation angles of vicinal a-plane sapphire substrates were changed systematically from 0° to 0.75°. Surface morphology and crystalline qualities are found to be very sensitive to misorientation angles of a-plane sapphire substrates and the misorientation angle was optimized to be 0.25°.

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

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