Density of States Spectroscopy in p-Type a-Si:H and a-SiC:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Richard S. Crandall ◽  
Stanley J. Salamon ◽  
Yueqin Xu
Keyword(s):  
Density Of States ◽  
Hydrogenated Amorphous Silicon ◽  
Closed Form Expression ◽  
Form Expression ◽  
Junction Capacitance ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Exponential Increase ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe derive a closed form expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy. Using this expression, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials we find that the p-layer DOS is described by an exponential increase with energy above the Fermi level.

Polymorphous Silicon: Transport Properties and Solar Cell Applications

1999 ◽  
Vol 557 ◽  
Author(s):  
C. Longeaud ◽  
J. P. Kleider ◽  
M. Gauthier ◽  
R. Brtiggemann ◽  
Y. Poissant ◽  
...  
Keyword(s):  
Fermi Level ◽  
Transport Properties ◽  
Density Of States ◽  
Diffusion Length ◽  
Hydrogenated Amorphous Silicon ◽  
Capacitance Measurements ◽  
New Material ◽  
Hydrogenated Amorphous ◽  
Minority Carriers ◽  
Excellent Stability

AbstractTransport properties of hydrogenated polymorphous silicon layers (pm-Si:H) deposited at 150°C under various pressures in the range 80-293 Pa in sandwich (Schottky and p-i-n diodes) and coplanar structures have been compared to those of hydrogenated amorphous silicon (a-Si:H) samples deposited at the same temperature in standard conditions. The layers have been studied as-deposited, annealed and after light-soaking. With increasing pressure up to 240 Pa: i) the density of states above the Fermi level decreases as determined by means of the modulated photocurrent technique, ii) the mobility-lifetime products of electrons and holes measured by means of steady-state photoconductivity and photocarrier grating techniques both increase. The highest values for the diffusion length of minority carriers exceed 200 nm. Capacitance measurements as a function of frequency and temperature show that the density of states at the Fermi level is lower in the pm-Si:H than in the a-Si:H films. After light-soaking the diffusion length of minority carriers in a-Si:H is reduced by a factor oftwo whereas it is less reduced or not affected in the pm-Si:H layers. Solar cells including this new material present an excellent stability.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

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