Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

Cluster Ion Beam Processing: Review of Current and Prospective Applications

2011 ◽  
Vol 1354 ◽  
Author(s):  
Isao Yamada ◽  
Joseph Khoury
Keyword(s):  
Surface Analysis ◽  
Energy Surface ◽  
Ion Beam ◽  
Industrial Applications ◽  
Low Energy ◽  
High Rate ◽  
Cluster Ions ◽  
Current Status ◽  
Cluster Ion ◽  
Beam Characteristics

ABSTRACTCluster ion beam processes which employ ions comprised of a few hundred to several thousand atoms are being developed into a new field of ion beam technology. The processes are characterized by low energy surface interaction effects, lateral sputtering phenomena and high-rate chemical reaction effects. This paper reviews the current status of studies of the fundamental cluster ion beam characteristics as they apply to nanoscale processing and present industrial applications. As new prospective applications, techniques are now being developed to employ cluster ions in surface analysis tools such as XPS and SIMS and to modify surfaces of bio-materials. Results related to these new projects will also be reviewed.

Cluster Ion Beam Process for Nanofabrication

2007 ◽  
Vol 1020 ◽  
Author(s):  
Isao Yamada ◽  
Noriaki Toyoda
Keyword(s):  
Ion Beam ◽  
Industrial Applications ◽  
Significant Events ◽  
Junction Formation ◽  
Cluster Ion Beams ◽  
Experimental Laboratory ◽  
Cluster Ion ◽  
Linear Effects ◽  
Gas Cluster Ion Beam ◽  
Cluster Beams

AbstractThis paper reviews gas cluster ion beam (GCIB) technology, including the generation of cluster beams, fundamental characteristics of cluster ion to solid surface interactions, emerging industrial applications, and identification of some of the significant events which occurred as the technology has evolved into what it is today. More than 20 years have passed since the author (I.Y) first began to explore feasibility of processing by gas cluster ion beams at the Ion Beam Engineering Experimental Laboratory of Kyoto University. Processes employing ions of gaseous material clusters comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications.

Advances in Ion and Laser Beam Technology: Achievements of Japanese Government and University Projects

1997 ◽  
Vol 504 ◽  
Author(s):  
Isao Yamada
Keyword(s):  
Laser Beam ◽  
Ion Beam ◽  
Dielectric Materials ◽  
Ion Beams ◽  
High Rate ◽  
Laser Beams ◽  
Research Association ◽  
Technology Research ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

ABSTRACTThis paper reviews recent R&D activity in advanced beam technologies funded by MITI and JST. A large-scale national project known as AMMTRA (Advanced Material-Processing and Machining Technology Research Association) funded by MITI has made a significant contribution to industrial applications of beam processing by developing high density ion and laser beam equipment. A subsequent program, the ACTA (Advanced Chemical Processing Technology Research Association) project involves development of multi-beam deposition systems for metal and dielectric materials formation including several systems which combine ion and laser beams, ion beams and CVD and plasma, and laser beams with sputtering. NEDO Proposal Based Project and JST (The Japan Science and Technology Corporation)-Exploitation and Application Study Project are fundamentally aimed to transfer technology from university to industry. Research in gas cluster ion beam technology is currently being conducted in the following areas: (i) shallow ion implantation for 0.1 μ m PMOS junction formation, (ii) high rate etching and smoothing for Si, diamond, SiC and metal oxide films and (iii) thin film depositions for optical filter and transparent conductive film. The gas cluster ion beam processes are discussed in comparison with traditional ion beam processing methods which are presently limited by available atomic and molecular ion beams.

High rate etching of GaAs and GaP by gas cluster ion beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Masahiro Nagano ◽  
Shingo Houzumi ◽  
Noriaki Toyoda ◽  
Susumu Yamada ◽  
Shirabe Akita ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
New Processing ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Sputtering Yields

ABSTRACTGas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.

Secondary Ion Mass Spectrometry with Gas Cluster Ion Beams

2000 ◽  
Vol 647 ◽  
Author(s):  
Noriaki Toyoda ◽  
Jiro Matsuo ◽  
Takaaki Aoki ◽  
Shunichi Chiba ◽  
Isao Yamada ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Md Simulations ◽  
Ion Beams ◽  
Cluster Ions ◽  
Ion Mass Spectrometry ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Secondary Ion

AbstractSecondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was studied with experiments and molecular dynamics (MD) simulations to achieve a high-resolution depth profiling. For this purpose, it is important to prevent both ion-mixing and the surface roughening due to energetic ions. As the Ar cluster ion beam shows surface smoothing effects and high secondary-ion yield in the low-energy regime, the cluster ion beam would be suitable for the primary ion beam of SIMS. From MD simulations of Ar cluster ion impact on a Si substrate, the ion-mixing is heavier than for Ar monomer ions at the same energy per atom, because the energy density at the impact point by clusters is extremely high. However, the sputtering yields with Ar cluster ions are one or two orders of magnitude higher than that with Ar monomer ions at the same energy per atom. Comparing at the ion energy where the ion-mixing depths are the same by both cluster and monomer ion impacts, cluster ions show almost ten times higher sputtering yield than Ar monomer ions. Preliminary experiment was done with a conventional SIMS detector and a mass resolution of several nm was achieved with Ar cluster ions as a primary ion beam.

Size Dependence of Bombardment Characteristics Produced by Cluster Ion Beams

1997 ◽  
Vol 504 ◽  
Author(s):  
T. Seki ◽  
M. Tanomura ◽  
T. Aoki ◽  
J. Matsuo ◽  
I. Yamada
Keyword(s):  
Ion Beam ◽  
Local Area ◽  
Carbon Cluster ◽  
High Rate ◽  
Cluster Ions ◽  
Scanning Tunneling ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Ion Impact ◽  
The Impact

ABSTRACTCluster ion beam processes provide new surface modification techniques, such as surface smoothing, high rate sputtering and very shallow implantation, because of the unique interactions between cluster and surface atoms. To understand interactions with cluster and surface, Scanning Tunneling Microscope (STM) observations have been done for single impact traces.Highly Oriented Pyrolitic Graphite (HOPG) surfaces were bombarded by carbon cluster ions (Va≤300kV), and large ridges and craters have been observed as a result of single cluster ion impact. The impact site diameters are proportional to the cluster size up to 10 atoms, and increase drastically for cluster sizes above 10. This indicates that non-linear multiple collisions occur only when a local area is bombarded by more than 10 atoms at the same time.

High-speed Processing with Reactive Cluster Ion Beams

2004 ◽  
Vol 843 ◽  
Author(s):  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
High Speed ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ions ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Reactive Cluster

ABSTRACTCluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. Reactive cluster ion beams, such as SF6, CF4, CHF3, and CH2F2, were generated and their cluster size distributions were measured using Time-of-Flight (TOF) method. Si substrates were irradiated with the reactive cluster ions at the acceleration energy of 5–65 keV. Each sputtering yield was increased with acceleration energy and was about 1000 times higher than that of Ar monomer ions. The sputtering yield of SF6 cluster ions was about 4600 atoms/ion at 65 keV. With this beam, 12 inches wafers can be etched 0.5 μm per minute at 1 mA of beam current. The TOF measurement showed that the size of SF6 cluster was about 550 molecules and the number of fluorine atoms in a SF6 cluster was about 3300. If the sputtered product was SiF, the yield has to be less than 3300 atoms/ion. These results indicate that the reactive cluster ions etch targets not only chemically, but also physically. This high-speed processing with reactive cluster ion beam can be applied to fabricate nano-devices.

scholarly journals Сглаживание тонких поликристаллических пленок AlN кластерными ионами аргона

2021 ◽  
Vol 47 (6) ◽  
pp. 44
Author(s):  
И.В. Николаев ◽  
Н.Г. Коробейщиков ◽  
М.А. Роенко ◽  
П.В. Гейдт ◽  
В.И. Струнин
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Cluster Ions ◽  
Polycrystalline Aluminum ◽  
Etching Depth ◽  
Spatial Frequencies ◽  
Wide Range ◽  
Cluster Ion ◽  
Thin Polycrystalline

The possibility of surface modification of thin polycrystalline aluminum nitride films by bombardment with argon cluster ion beam is investigated. The processing was carried out with high- (105 eV/atom) and low-energy (10 eV/atom) cluster ions. Using the spectral function of roughness, a highly efficient smoothing of the surface of nanostructured thin films of aluminum nitride was demonstrated in a wide range of spatial frequencies (ν = 0.02–128 μm-1) and at small etching depth (<100 nm).

Gas Cluster Ion Beam Processing for ULSI Fabrication

1996 ◽  
Vol 427 ◽  
Author(s):  
I. Yamada ◽  
J. Matsuo
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Surface Cleaning ◽  
Cluster Ions ◽  
High Yield ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam ◽  
Substrate Surfaces ◽  
The Impact ◽  
Ulsi Fabrication

AbstractUnique characteristics of gas cluster ion beam bombardment are discussed in terms of ULSI fabrication processes. Cluster ion beams consisting of a few hundreds to thousands of atoms have been generated from various kinds of gas materials. Multi-collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally low energy bombarding effects in a range of a few eV to hundreds of eV per atom at very high density. These bombarding characteristics can be applied to shallow ion implantation, high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.

High-speed Processing with Cluster Ion Beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Toshio Seki ◽  
Jiro Matsuo
Keyword(s):  
High Speed ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ions ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Reactive Cluster

ABSTRACTCluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. High current SF6 cluster ion beams were recently obtained with new modifications in the basic cluster ion beam technique. The cluster size distribution was measured with Time-of-Flight (TOF) method and the mean size of cluster was about 500 molecules. Si substrates were irradiated with SF6 cluster ions at the acceleration energy of 5–45 keV. Sputtering yield with SF6 cluster ions was increased with acceleration energy and was about 2300 atoms/ion at 45 keV. The sputtering yield was about 1000 times higher than that of Ar monomer ions and was also higher than that of Ar cluster ions. It was found that reactive sputtering occurred with SF6 cluster ion irradiation. These results indicate that high-speed fabrication can be realized with reactive cluster ion irradiation at high energy.

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