The Promotion of Silicide Formation using a Scanned Silicon Ion Beam

1988 ◽  
Vol 100 ◽  
Author(s):  
E. J. Williams ◽  
E. G. Bithell ◽  
C. B. Boothroyd ◽  
W. M. Stobbs ◽  
R. J. Young ◽  
...  
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Silicide Formation ◽  
Argon Ion

ABSTRACTThe promotion of silicide reactions at the interface between silicon and a metal overlayer is described, the reactions being initiated by scanned ion beams. The relative effects of low and high energy Si+ and Si2+ beams are discussed and the results of subsequent annealing are compared with those seen when using low energy (5keV) argon ion beams. The implications for the writing of metallisation lines are also noted.

Argon Ion Bombardment During Molecular Beam Epitaxy of Ge (001)

1988 ◽  
Vol 128 ◽  
Author(s):  
Eric Chason ◽  
K. M. Horn ◽  
J. Y. Tsao ◽  
S. T. Picraux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Argon Ion Bombardment ◽  
Argon Ion

ABSTRACTUsing in situ, real-time reflection high energy electron diffraction (RHEED), we have measured the evolution of Ge (001) surface morphology during simultaneous molecular beam epitaxy and Ar ion beam bombardment. Surprisingly, low-energy Ar ions during growth tend to smoothen the surface. Bombardment by the ion beam without growth roughens the surface, but the surface can be reversibly smoothened by restoring the growth beam. We have measured the effect of such “ion beam growth smoothening” above and below the critical temperature for intrinsic growth roughening. At all measured growth temperatures the surface initially smoothens, but below the critical roughening temperature the final surface morphology is rough whereas above this temperature the final morphology is smooth.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

scholarly journals Low Energy 500 eV Focused Argon Ion Beam Provided by Multi-Ions Species Plasma FIB for Material Science Sample Preparations

2021 ◽  
Vol 27 (S1) ◽  
pp. 20-22
Author(s):  
Chengge Jiao ◽  
Jeremy Graham ◽  
Xu Xu ◽  
Timothy Burnett ◽  
Brandon van Leer
Keyword(s):  
Material Science ◽  
Ion Beam ◽  
Low Energy ◽  
Argon Ion

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

scholarly journals Design, development, and testing of non-intercepting profile diagnostics for intense heavy ion beams using a capacitive pickup and beam induced gas fluorescence monitors

2006 ◽  
Vol 24 (4) ◽  
pp. 541-551 ◽  
Author(s):  
F. BECKER ◽  
A. HUG ◽  
P. FORCK ◽  
M. KULISH ◽  
P. NI ◽  
...  
Keyword(s):  
Focal Plane ◽  
Energy Deposition ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
High Energy Density ◽  
Design Development ◽  
Heavy Ion Beam ◽  
Beam Parameters

An intense and focused heavy ion beam is a suitable tool to generate high energy density in matter. To compare results with simulations it is essential to know beam parameters as intensity, longitudinal, and transversal profile at the focal plane. Since the beam's energy deposition will melt and evaporate even tungsten, non-intercepting diagnostics are required. Therefore a capacitive pickup with high resolution in both time and space was designed, built and tested at the high temperature experimental area at GSI. Additionally a beam induced fluorescence monitor was investigated for the synchrotron's (SIS-18) energy-regime (60–750 AMeV) and successfully tested in a beam-transfer-line.

Development of a high energy large sheet ion beam system and a low energy ion beam deposition system

1994 ◽  
pp. 63-68
Author(s):  
S. Seki ◽  
R. Fukui ◽  
S. Ogata ◽  
N. Sasaki ◽  
S. Shimizu ◽  
...  
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam System ◽  
Large Sheet ◽  
Beam Deposition

B4C/Mo/Si and Ta2O5/Ta nanostructures analysed by ultra-low energy argon ion beams

2003 ◽  
Vol 203-204 ◽  
pp. 354-358 ◽  
Author(s):  
P. Konarski ◽  
A. Mierzejewska
Keyword(s):  
Ion Beams ◽  
Low Energy ◽  
Argon Ion

SUPER SEPARATOR SPECTROMETER FOR THE LINAG HEAVY ION BEAMS

2009 ◽  
Vol 18 (10) ◽  
pp. 2160-2168 ◽  
Author(s):  
A. DROUART ◽  
J. A. NOLEN ◽  
H. SAVAJOLS
Keyword(s):  
Electron Spectroscopy ◽  
Heavy Ion ◽  
High Energy ◽  
Ion Beams ◽  
Low Energy ◽  
Current Status ◽  
Secondary Reactions ◽  
Two Stages ◽  
Rotating Target ◽  
Very High

The Super Separator Spectrometer (S3) will receive the very high intensity heavy ion beams from the LINAG accelerator of SPIRAL2. Its privileged fields of physics are the delayed study of rare nuclei and secondary reactions with exotic nuclei. The project is presently in a phase of conceptual design. It includes a rotating target to sustain the high energy deposit, a two stages separator (momentum achromat) and spectrometer (mass spectrometer). Various detection set-ups are foreseen, especially a delayed α, γ, and electron spectroscopy array and a gas catcher coupled to a low energy branch. We present here the current status of the project and its main features.

Gas Cluster Ion Beam Technology for Nano-Fabrication

2012 ◽  
Vol 82 ◽  
pp. 1-8
Author(s):  
Noriaki Toyoda ◽  
Isao Yamada
Keyword(s):  
Ion Beam ◽  
Surface Region ◽  
Local Area ◽  
Industrial Applications ◽  
Ion Beams ◽  
Low Energy ◽  
Cluster Ions ◽  
Nano Fabrication ◽  
Cluster Ion ◽  
Gas Cluster Ion Beam

A gas cluster is an aggregate of a few to several thousands of gaseous atoms or molecules, and it can be accelerated to a desired energy after ionization. Since the kinetic energy of an atom in a cluster is equal to the total energy divided by the cluster size, a quite-low-energy ion beam can be realized. Although it is difficult to obtain low-energy monomer ion beams due to the space charge effect, equivalently low-energy ion beams can be realized by using cluster ion beams at relatively high acceleration voltages. Not only the low-energy feature but also the dense energy depositions at a local area are important characteristics of the irradiation by gas cluster ions. All of the impinging energy of a gas cluster ion is deposited at the surface region, and this dense energy deposition is the origin of enhanced sputtering yields, crater formation, shockwave generation, and other non-linear effects. GCIBs are being used for industrial applications where a nano-fabrication process is required. Surface smoothing, shallow doping, low-damage etching, trimming, and thin-film formations are promising applications of GCIBs. In this paper, fundamental irradiation effects of GCIB are discussed from the viewpoint of low-energy irradiation, sputtering, and dense energy depositions. Also, various applications of GCIB for nano-fabrications are explained.

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