Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
R. T. Tung ◽  
J. M. Gibson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Cell Formation ◽  
Pulsed Laser ◽  
Phase Growth ◽  
Interfacial Instabilities ◽  
Laser Melting ◽  
Liquid Phase Growth ◽  
Pulsed Laser Irradiation

ABSTRACTEpitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.

Liquid phase epitaxy of cubic FeSi2on (111) Si induced by pulsed laser irradiation

1992 ◽  
Vol 60 (9) ◽  
pp. 1132-1134 ◽  
Author(s):  
M. G. Grimaldi ◽  
P. Baeri ◽  
C. Spinella ◽  
S. Lagomarsino
Keyword(s):  
Liquid Phase ◽  
Laser Irradiation ◽  
Liquid Phase Epitaxy ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

2007 ◽  
Vol 25 (6) ◽  
pp. 1847 ◽  
Author(s):  
Malek Tabbal ◽  
Taegon Kim ◽  
Jeffrey M. Warrender ◽  
Michael J. Aziz ◽  
B. L. Cardozo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Silicon Based

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

2014 ◽  
Vol 44 (6) ◽  
pp. 1870-1875 ◽  
Author(s):  
Hiroyuki Kitagawa ◽  
Tsukasa Matsuura ◽  
Toshihito Kato ◽  
Kin-ya Kamata
Keyword(s):  
Liquid Phase ◽  
Thermoelectric Properties ◽  
Phase Growth ◽  
Liquid Phase Growth

Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

2003 ◽  
Vol 42 (Part 2, No.1A/B) ◽  
pp. L4-L6 ◽  
Author(s):  
Fumio Kawamura ◽  
Tomoya Iwahashi ◽  
Kunimichi Omae ◽  
Masanori Morishita ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy

Laser-activated gold catalysts for liquid-phase growth of cadmium selenide nanowires

2015 ◽  
Vol 51 (11) ◽  
pp. 2145-2148 ◽  
Author(s):  
C. Huang ◽  
J. Mao ◽  
X. M. Chen ◽  
J. Yang ◽  
X. W. Du
Keyword(s):  
Liquid Phase ◽  
Liquid Medium ◽  
Cadmium Selenide ◽  
Room Temperature ◽  
Gold Catalysts ◽  
Device Fabrication ◽  
Phase Growth ◽  
Liquid Phase Growth ◽  
Cdse Nanowires ◽  
Cadmium Selenide Nanowires

A laser-activated-catalyst (LAC) technique was developed to grow CdSe nanowires in liquid medium at room temperature. The LAC technique can achieve accurate positioning of nanowires, which is beneficial for device fabrication.

Growth mechanism during selective epitaxy of p-doped SiC using VLS transport

2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Liquid Droplets ◽  
Growth Mechanisms ◽  
Phase Growth ◽  
Selective Epitaxial Growth ◽  
Standard Configuration ◽  
Liquid Phase Growth

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.

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