Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

2003 ◽  
Vol 42 (Part 2, No.1A/B) ◽  
pp. L4-L6 ◽  
Author(s):  
Fumio Kawamura ◽  
Tomoya Iwahashi ◽  
Kunimichi Omae ◽  
Masanori Morishita ◽  
Masashi Yoshimura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy

Liquid-phase epitaxy of single-crystal erbium-ytterbium codoped YAl3(BO3)4 layers as key components of planar waveguides

2011 ◽  
Vol 47 (9) ◽  
pp. 979-982 ◽  
Author(s):  
E. A. Volkova ◽  
D. A. Ksenofontov ◽  
V. V. Maltsev ◽  
N. I. Leonyuk ◽  
Yu. K. Kabalov ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Planar Waveguides

Mössbauer effect of magnetoelectric Y3Fe5O12(YIG) single crystal prepared by liquid phase epitaxy

1994 ◽  
Vol 161 (1) ◽  
pp. 141-146
Author(s):  
Hiroshi Komada ◽  
Kazuhiro Saito ◽  
Kay Kohn ◽  
Midori Tanaka ◽  
Kiiti Siratori ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Mössbauer Effect ◽  
Mossbauer Effect

Some studies on the growth and properties of Pb1−xSnxTe layers by hot-wall and liquid-phase epitaxy

1985 ◽  
Vol 63 (6) ◽  
pp. 753-756
Author(s):  
K. B. Sundaram ◽  
N. Dalacu ◽  
B. K. Garside
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Single Crystals ◽  
Liquid Phase Epitaxy ◽  
Device Fabrication ◽  
Laue Diffraction ◽  
X Ray ◽  
Hot Wall Epitaxy

Pb0.92Sn0.08Te layers have been grown by hot-wall and liquid-phase epitaxy techniques. In the hot-wall epitaxy case, layers are grown on BaF2 and Pb0.92Sn0.08Te single-crystal substrates, while in the case of liquid-phase epitaxy, single crystals of PbTe and Pb0.92Sn0.08Te are used. In both cases x-ray Laue diffraction studies indicated the growth of good quality epilayers suitable for device fabrication.

Silicon Layers Grown on Patterned Substrates by Liquid Phase Epitaxy

1985 ◽  
Vol 54 ◽  
Author(s):  
E. Bauser ◽  
D. KÄss ◽  
M. Warth ◽  
H. P. Strunk
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Single Crystal Silicon ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Surfaces And Interfaces ◽  
Lateral Overgrowth ◽  
Via Holes

ABSTRACTSingle-crystal silicon layers and doping multilayers have been grown by liquid phase qpitaxy on silicon substrates. The substrates were either partially masked by SiO2, with via holes of various shapes and sizes, or patterned with SiO2 stripes, or profiled with grooves and ridges. The via holes and grooves were just refilled, or they acted as seeding areas for lateral overgrowth of the oxidized wafer up to 100μm. The silicon layers, interfaces and heterointerfaces were free of defects. With appropriate growth conditions the surfaces and interfaces of the epitaxial Si were outstandingly planar.

Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
R. T. Tung ◽  
J. M. Gibson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Cell Formation ◽  
Pulsed Laser ◽  
Phase Growth ◽  
Interfacial Instabilities ◽  
Laser Melting ◽  
Liquid Phase Growth ◽  
Pulsed Laser Irradiation

ABSTRACTEpitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.

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