Epitaxy Development in thin Superconducting YBa2Cu3O7 Films

1991 ◽  
Vol 237 ◽  
Author(s):  
A. Yen ◽  
L. Li ◽  
J. D. Klein ◽  
W. B. Nowak ◽  
S. F. Cogan

ABSTRACTUltrathin superconducting YBa2Cu3O7, films were grown on (100) YSZ (yttria-stabilized-zirconia) substrates by off-axis if magnetron sputtering at a relatively high deposition rate. The structure, orientation, and morphology of the films were examined by x-ray diffraction, reflection high-energy electron diffraction (RHEED), and scanning electron microscopy. X-ray diffraction patterns of films deposited on YSZ substrates exhibited strong c-axis alignment with the YBa2Cu3O7 peaks sharpening as the film thickness was increased. The degree of epitaxy apparent in RHEED photographs was found to increase dramatically as the film thickness was increased from 12 nm to 108 nm. This behavior is attributed to a nucleation and growth process in which epitaxy develops as a result of a 3 stage progression from a random to an oriented film.The films were in-situ superconducting, exhibiting superconducting transition temperatures, Tc(0)'s, of 80 K for a 12 nm film and 88 K for a 280 nm film. However, the relatively low critical current densities (Jc < 1 × 106 A/cm2) at 77 K are probably due to a lack of in-plane epitaxy.

2009 ◽  
Vol 615-617 ◽  
pp. 23-26 ◽  
Author(s):  
Peter J. Wellmann ◽  
Katja Konias ◽  
Philip Hens ◽  
Rainer Hock ◽  
Andreas Magerl

This work reports on the in-situ observation of a polytype switch during physical vapor transport (PVT) growth of bulk SiC crystals by x-ray diffraction. A standard PVT reactor for 2” and 3” bulk growth was set up in a high-energy x-ray diffraction lab. Due to the high penetration depth of the high-energy x-ray beam no modification of the PVT reactor was necessary in order to measure Laue diffraction patterns of the growing crystal with good signal to noise ratio. We report for the first time upon the in-situ observation of polytype switching during SiC bulk PVT growth.


2021 ◽  
Vol 52 (5) ◽  
pp. 1812-1825
Author(s):  
Sen Lin ◽  
Ulrika Borggren ◽  
Andreas Stark ◽  
Annika Borgenstam ◽  
Wangzhong Mu ◽  
...  

AbstractIn-situ high-energy X-ray diffraction experiments with high temporal resolution during rapid cooling (280 °C s−1) and isothermal heat treatments (at 450 °C, 500 °C, and 550 °C for 30 minutes) were performed to study austenite decomposition in two commercial high-strength low-alloy steels. The rapid phase transformations occurring in these types of steels are investigated for the first time in-situ, aiding a detailed analysis of the austenite decomposition kinetics. For the low hardenability steel with main composition Fe-0.08C-1.7Mn-0.403Si-0.303Cr in weight percent, austenite decomposition to polygonal ferrite and bainite occurs already during the initial cooling. However, for the high hardenability steel with main composition Fe-0.08C-1.79Mn-0.182Si-0.757Cr-0.094Mo in weight percent, the austenite decomposition kinetics is retarded, chiefly by the Mo addition, and therefore mainly bainitic transformation occurs during isothermal holding; the bainitic transformation rate at the isothermal holding is clearly enhanced by lowered temperature from 550 °C to 500 °C and 450 °C. During prolonged isothermal holding, carbide formation leads to decreased austenite carbon content and promotes continued bainitic ferrite formation. Moreover, at prolonged isothermal holding at higher temperatures some degenerate pearlite form.


2021 ◽  
Vol 800 ◽  
pp. 140249
Author(s):  
Juan Macchi ◽  
Steve Gaudez ◽  
Guillaume Geandier ◽  
Julien Teixeira ◽  
Sabine Denis ◽  
...  

2010 ◽  
Vol 504 ◽  
pp. S155-S158 ◽  
Author(s):  
J. Bednarcik ◽  
C. Curfs ◽  
M. Sikorski ◽  
H. Franz ◽  
J.Z. Jiang

2011 ◽  
Vol 21 (15) ◽  
pp. 5604 ◽  
Author(s):  
Zonghai Chen ◽  
Yang Ren ◽  
Yan Qin ◽  
Huiming Wu ◽  
Shengqian Ma ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.


2021 ◽  
Vol 118 (13) ◽  
pp. 132903
Author(s):  
Mao-Hua Zhang ◽  
Changhao Zhao ◽  
Lovro Fulanović ◽  
Jürgen Rödel ◽  
Nikola Novak ◽  
...  

Author(s):  
Partha P. Paul ◽  
Chuntian Cao ◽  
Vivek Thampy ◽  
Hans-Georg Steinrück ◽  
Tanvir R. Tanim ◽  
...  

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