Accommodation of Substrate Steps in the Growth of CoSi2 on (lll)Si
Keyword(s):
ABSTRACTThin films of CoSi2 have been grown on (111) substrates of Si, and studied using transmission electron microscopy. In 2nm films, steps initially on the substrate were found to be transformed into interfacial dislocations following deposition of the films. The Burgers vectors of the dislocations were consistent with ½<101>, which includes a component ½[111] perpendicular to the interface. The contrast behaviour of these dislocations exhibited characteristic effects, which are consistent with the short-range displacement field of the defects resembling that of a disclination dipole.
Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk
1991 ◽
Vol 49
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1990 ◽
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pp. 336-337
1990 ◽
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2002 ◽
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