Effect of Electrode Materials on the Microstructure of Sol-Gel Derived Pzt Ferroelectric Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Sharon A. Myers ◽  
Edward R. Myers
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Electrode Materials ◽  
Volume Fraction ◽  
Sol Gel ◽  
Oxide Films ◽  
Pyrochlore Phase ◽  
Ferroelectric Thin Films ◽  
Metal Oxide Films ◽  
Wide Range

AbstractA wide range of electrode materials have been investigated for use in ferroelectric-silicon CMOS technology. Numerous metal and metal-oxide films were deposited on silicon substrates and coated with sol-gel derived ferroelectric thin films. The films were sintered in either a diffusion furnace or by rapid thermal processing. Transmission electron microscopy was used to investigate the evolution of the resulting ferroelectric thin film microstructure and ferroelectric / electrode material interactions.Microstructural differences such as the volume fraction of the ferroelectric perovskite and pyrochlore phase, domains and grain structure are correlated with electrical results. A strong microstructural dependence on the substrate was found for the Cr, Zr, Hf and Ni electrode materials. In general, chromium and other metal-oxide films had high leakage currents and large volume fractions of the non-ferroelectric pyrochlore phase. Nickel electrodes displayed the best electrical results, but the microstructure is very different from the other ferroelectric films.

Transparent, Conducting ATO Thin Films by Epoxide-Initiated Sol–Gel Chemistry: A Highly Versatile Route to Mixed-Metal Oxide Films

2012 ◽  
Vol 4 (5) ◽  
pp. 2464-2473 ◽  
Author(s):  
Matthias M. Koebel ◽  
Digambar Y. Nadargi ◽  
Giselle Jimenez-Cadena ◽  
Yaroslav E. Romanyuk
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Mixed Metal Oxide ◽  
Metal Oxide Films ◽  
Mixed Metal ◽  
Transparent Conducting

A New Ferroelectric Varactor From Water Based Inorganic Precursors

2002 ◽  
Vol 720 ◽  
Author(s):  
T. Kirk Dougherty ◽  
John Drab ◽  
Mike Brand ◽  
Kathleen Kehle
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Water Soluble ◽  
Organic Chemical ◽  
Aliphatic Acid ◽  
Metal Alkoxides ◽  
Metal Oxide Films ◽  
Solution Deposition

AbstractSolution deposition processes for the production of thin multi-element metal oxide films continue with great interest and varied success. Solution deposition via either sol-gel or MOD (Metal Organic Decomposition) methods are of interest due to the ability to produce a wide variety of compositional products at low capital investment cost. The sol-gel method generally uses hydrolytically sensitive metal alkoxides as the starting materials. Manipulation of the reagents and different hydrolysis rates for multi-element mixtures are issues. The MOD method utilizes large organic acid metal salts as the starting materials. In general, MOD solutions are more hydrolytically stable than the sol-gel solutions. MOD process challenges include large quantities of carbon to be decomposed during the firing, shrinkage and stress of the thin films, variable chemistry in synthesis of the starting materials (especially when the starting materials for the MOD precursors are metal alkoxides), and long reaction times for the synthesis. For both the sol-gel and MOD precursors, toxic and volatile organic chemical (VOC's) solvents are employed as the vehicle.This paper will review the chemistry-related issues to production of consistent highquality metal oxide films via the MOD process. The fabrication of thin BaxSr(1-x)TiO3 (BST) films is described. A new class of MOD precursor has been implemented using polyether acids as the organic vehicle. These new materials are both water stable and water soluble. High quality BST thin films made from these precursors are described and capacitors made from these films are compared to the aliphatic acid MOD materials. Improved capacitors using lower resistance electrodes and interconnects are described, as well as devices designed specifically for our specific application.

A Surface Sol−Gel Process of TiO2and Other Metal Oxide Films with Molecular Precision

1997 ◽  
Vol 9 (6) ◽  
pp. 1296-1298 ◽  
Author(s):  
Izumi Ichinose ◽  
Hiroyuki Senzu ◽  
Toyoki Kunitake
Keyword(s):  
Metal Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Metal Oxide Films ◽  
Sol Gel Process

Metal–oxide films with magnetically-modulated nanoporous architectures

2001 ◽  
Vol 16 (6) ◽  
pp. 1686-1693 ◽  
Author(s):  
Craig A. Grimes ◽  
R. Suresh Singh ◽  
Elizabeth C. Dickey ◽  
Oomman K. Varghese
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Coming Out ◽  
Domain Walls ◽  
Substrate Surface ◽  
Sol Gel ◽  
Oxide Films ◽  
Magnetic Domain ◽  
Domain Size ◽  
Metal Oxide Films

A magnetically-driven method for controlling nanodimensional porosity in sol-gel-derived metal–oxide films, including TiO2, Al2O3, and SnO2, coated onto ferromagnetic amorphous substrates, such as the magnetically-soft Metglas1 alloys, is described. On the basis of the porous structures observed dependence on external magnetic field, a model is suggested to explain the phenomena. Under well-defined conditions it appears that the sol particles coming out of solution, and undergoing Brownian motion, follow the magnetic field lines oriented perpendicularly to the substrate surface associated with the magnetic domain walls of the substrate; hence the porosity developed during solvent evaporation correlates with the magnetic domain size.

Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

2012 ◽  
Vol 602-604 ◽  
pp. 1461-1464
Author(s):  
Hua Wang ◽  
Li Liu ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Ferroelectric Thin Films ◽  
Structure And Properties ◽  
Maximum Value ◽  
Processing Effects ◽  
Gel Processing

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

Ferroelectric thin films with complex composition of PNN–PZN–PMN–PZ–PT and excess NiO

2008 ◽  
Vol 23 (2) ◽  
pp. 536-542 ◽  
Author(s):  
Phoi Chin Goh ◽  
Kui Yao ◽  
Zhong Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Oxide System ◽  
Ferroelectric Thin Films ◽  
Ionic Radii ◽  
Pt Complex ◽  
The Stability

Ferroelectric thin films of the 0.1Pb(Ni1/3Nb2/3)O3–0.35Pb(Zn1/3Nb2/3)O3–0.15Pb (Mg1/3Nb2/3)O3–0.1PbZrO3–0.3PbTiO3 (PNN–PZN–PMN–PZ–PT) complex oxide system were prepared on Pt/Ti/SiO2/Si substrates using a polymer-modified sol-gel method followed by a rapid thermal annealing (RTA) process. It was found that the addition of excess NiO is effective in stabilizing the perovskite phase while suppressing the pyrochlore phase. The crystalline structure and morphology of the films with different amounts of access NiO were studied with x-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. The electrical properties, including dielectric, ferroelectric, and piezoelectric, showed a significant improvement with excess NiO. The film sample with 3 mol% of excess NiO exhibited optimized electrical properties. Different parameters, including tolerance factors on the basis of ionic radii, electronegativity differences between cations and anions, and oxygen bond valences, were applied to analyze the stability of the perovskite phase with different amount of excess NiO. Analysis results indicated that only the bond-valence theory could explain the effect of excess NiO on the stability of the perovskite phase under the assumption that the excess Ni2+ entered the A sites of the perovskite structure.

scholarly journals Tantalum(v) 1,3-propanediolate β-diketonate solution as a precursor to sol–gel derived, metal oxide thin films

RSC Advances ◽  
2020 ◽  
Vol 10 (23) ◽  
pp. 13737-13748 ◽  
Author(s):  
Christopher Beale ◽  
Stefanie Hamacher ◽  
Alexey Yakushenko ◽  
Oumaima Bensaid ◽  
Sabine Willbold ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
Sol Gel ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Solution Deposition

Synthesis of tantalum(v) 1,3-propanediolate β-diketonate solution and use in photochemical solution deposition to form tantalum oxide films.

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