Photovoltaic Effect in Thin Ferroelectric Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Philip S. Brody ◽  
B. J. Rod ◽  
L. P. Cook ◽  
P. K. Schenck
Keyword(s):  
Thin Films ◽  
Photovoltaic Effect ◽  
Ferroelectric Thin Films ◽  
Polarization Field ◽  
Polarization Reversal ◽  
Ferroelectric Films ◽  
Initial Current ◽  
Elapsed Time ◽  
Steady Current

AbstractPolarization-dependent photovoltaic currents are observed in continuously illuminated ferroelectric thin films under conditions of polarization reversal. Following reversal, an initial current rapidly decays to an essentially steady current, which then decays slowly with the current decreasing in proportion to the logarithm of elapsed time. These polarization-dependent currents are attributed to the action of internal fields on photocarriers where the fields result from the incomplete screening of the polarization field.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films

2021 ◽  
Author(s):  
Komalika Rani ◽  
Sylvia Matzen ◽  
Stéphane Gable ◽  
Thomas Maroutian ◽  
Guillaume Agnus ◽  
...  
Keyword(s):  
Thin Films ◽  
Photovoltaic Effect ◽  
Quantitative Relationship ◽  
Open Circuit ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Polarization ◽  
Ferroelectric Layer ◽  
Ferroelectric Memories ◽  
Careful Investigation

Abstract Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100 percent switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr,Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

Photovoltaic effect in rhombohedral and tetragonal phase BiFeO3 ferroelectric thin films

2018 ◽  
Vol 192 (1) ◽  
pp. 146-153
Author(s):  
Rongli Gao ◽  
Chunlin Fu ◽  
Wei Cai ◽  
Gang Chen ◽  
Xiaoling Deng ◽  
...  
Keyword(s):  
Thin Films ◽  
Tetragonal Phase ◽  
Photovoltaic Effect ◽  
Ferroelectric Thin Films

Preparation of Bi2SiO5-SrBi2Ta2O9 Ferroelectric Thin Films by RF Magnetron Sputtering

2002 ◽  
Vol 748 ◽  
Author(s):  
Shin Kikuchi ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Remnant Polarization ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Films ◽  
Typical Composition

ABSTRACTSi-added SrBi2Ta2O9 (SBT) ferroelectric films were prepared by RF magnetron sputtering on a Pt/Ti/SiO2/Si (100) structure. The films were deposited at temperatures below 100°C for preventing Bi evaporation and crystallized at 800°C in air. A typical composition was Sr0.79Bi2.37Ta2.00Si0.2Ox. The remnant polarization value(2Pr) of the Si-added SBT film was 16C/cm2 and leakage current density was 5×10-8A/cm2. The current density was significantly decreased by adding Si atoms.

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

Effective Direct Piezoelectric Constants in Epitaxial Ferroelectric Films as MEMS Sensors

2005 ◽  
Vol 881 ◽  
Author(s):  
Jun Ouyang ◽  
R. Ramesh ◽  
A. L. Roytburd
Keyword(s):  
Thin Films ◽  
Orientation Dependence ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Constant ◽  
Mems Sensors ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Mems Sensor ◽  
Sensor Devices ◽  
Piezoelectric Constants

AbstractFollowing our previous work on the converse piezoelectric constant- in epitaxial ferroelectric films for MEMS actuator applications, the orientation dependence of the direct piezoelectric constants , and are generally formulated, which can help to predict and optimize the performance of piezoelectric MEMS sensor devices based on ferroelectric thin films. Numerical results are obtained and discussed for Pb(ZrxTi1-x)O3 thin films grow on Si substrates with various compositions and structures.

Enhanced photovoltaic effect in Bi2FeMo0.7Ni0.3O6 ferroelectric thin films by tuning the thickness

2020 ◽  
Vol 8 (4) ◽  
pp. 1359-1365 ◽  
Author(s):  
Xiaxia Cui ◽  
Yong Li ◽  
Xiaowei Li ◽  
Xihong Hao
Keyword(s):  
Thin Films ◽  
Driving Force ◽  
Photovoltaic Effect ◽  
Photovoltaic Performance ◽  
Ferroelectric Thin Films

An enhanced photovoltaic performance is achieved by self-polarization of Bi2FeMo0.7Ni0.3O3 ferroelectric thin films by tuning the driving force based on the change of thickness.

scholarly journals Injection charge assisted polarization reversal in ferroelectric thin films

2007 ◽  
Vol 90 (7) ◽  
pp. 072910 ◽  
Author(s):  
Yunseok Kim ◽  
Simon Bühlmann ◽  
Seungbum Hong ◽  
Seung-Hyun Kim ◽  
Kwangsoo No
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal
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