Kinetics of Light-Induced Deffect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

1998 ◽  
Vol 507 ◽  
Author(s):  
Baojie Yan ◽  
Shenlin Chen ◽  
P. C. Taylor
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Hydrogenated Amorphous Silicon ◽  
Activation Energies ◽  
Annealing Behavior ◽  
Peak Energy ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTThe creation and annealing kinetics of light-induced defects in a-SiSx:H are studied by ESR and LESR measurements. The dispersion of defect creation after prolonged illumination with white light is greater for a-SiSx:H than that for undoped a-Si:H. In addition, the saturated value of the dark spin density is slightly lower for a-SiSx:H than that for a-Si:H. The annealing behavior can be fitted with a Gaussian distribution of annealing activation energies as is the case for undoped a-Si:H. The incorporation of sulfur decreases the peak energy and increases the width of the distribution of activation energies. Light-soaking does not change the low temperature LESR spectrum and LESR spin density.

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Mechanical Spectroscopy Study on the Light Soaking Effect on Hydrogenated Amorphous Silicon

2012 ◽  
Vol 184 ◽  
pp. 416-421 ◽  
Author(s):  
H. Mizubayashi ◽  
I. Sakata ◽  
H. Tanimoto
Keyword(s):  
Internal Friction ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Distribution ◽  
Activation Energies ◽  
Mechanical Spectroscopy ◽  
Induced Changes ◽  
Mild Temperature ◽  
Hydrogenated Amorphous

For hydrogenated amorphous silicon (a-Si:H) films deposited at temperatures between 423 K and 623 K (a-Si:H423Kand so on), the light-induced changes in the internal friction between 80 K and 400 K were studied. The internal friction is associated with H2motion in microvoid networks, and shows the mild temperature dependence between about 80 K and 300 K (Q-180-300K) and the almost linear increase above 300 K (Q-1>300K). BothQ-180-300KandQ-1>300Kdecrease with increasing the deposition temperature, and show the mild temperature dependence ina-Si:H623K. The white light soaking with 100 mW/cm2(WLS100and so on) below 300 K caused a change inQ-180-300Kand no changes inQ-1>300K, respectively, and the light-induced changes inQ-180-300Krecovered after annealing at 423 K. The wide distribution of activation energies for H2motions between microvoids indicate that most of neighboring microvoids are connected through windows, i.e., the microvoid networks are existing ina-Si:H, and the spatially loose or solid structures are responsible for the low or high activation energies for the H2motion between microvoids, respectively. Furthermore, the light-induced hydrogen evolution (LIHE) was observed for WLS200to WLS400in a vacuum between 400 and 500 K, resulting in the disappearance of the internal friction due to the H2motion in the microvoid network.

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

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