VPD/SIMS Measurement of Surface Al on Silicon Substrates

1992 ◽  
Vol 259 ◽  
Author(s):  
V.K.F. Chia ◽  
R.W. Odom ◽  
R.J. Bleiler ◽  
D.B. Sams ◽  
R.S. Hockett
Keyword(s):  
Mass Spectrometry ◽  
Detection Limit ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Substrates ◽  
Phase Decomposition ◽  
Experimental Protocol ◽  
Analytical Technique ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Preparation Techniques

ABSTRACTAn experimental protocol using secondary ion mass spectrometry to measure Al in vapor phase decomposition (VPD) solutions has been developed to achieve a detection limit of 108 atoms/cm2. The analytical technique is called VPD/SIMS. The procedure utilizes sample preparation techniques developed for microvolume SIMS. Preliminary SIMS analysis of simulated VPD solutions consisting of dilute HF indicate that a theoretical detection limit of 5.7×105 Al atoms/cm2 is possible from a 6″ wafer.

SIMS STUDIES OF Cl-DOPED ZnSe EPILAYERS GROWN BY MBE

2006 ◽  
Vol 13 (02n03) ◽  
pp. 215-220
Author(s):  
F. S. GARD ◽  
J. D. RILEY ◽  
K. PRINCE
Keyword(s):  
Mass Spectrometry ◽  
Detection Limit ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Standard Sample ◽  
Host Matrix ◽  
Gaas Substrates ◽  
Sims Analysis ◽  
Secondary Ion

Chlorine is one of the most used species to produce n-type ZnSe epilayers. In this paper, we present Secondary Ion Mass Spectrometry (SIMS) profiles of a series of Cl -doped ZnSe samples, which were grown by Molecular Beam Epitaxy (MBE) technique on GaAs substrates. These profiles have been used to examine the limitation of SIMS analysis of narrow Cl -delta layers. In order to convert SIMS raw data to quantified data, the depth profile from a Cl -implanted standard sample has been used to estimate the "useful ion yield" of chlorine and thus the instrumental sensitivity for chlorine in a ZnSe matrix. The "useful ion yield" and detection limit of chlorine in the ZnSe host matrix were calculated to be 4.7 × 10-7 and 5 × 1017 atoms/cm3, respectively.

Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS

1997 ◽  
Vol 468 ◽  
Author(s):  
Y. Gao ◽  
J. Kirchhoff ◽  
S. Mitha ◽  
J. W. Erickson ◽  
C. Huang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Quantum Well ◽  
Matrix Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Compositional Analysis ◽  
Analytical Technique ◽  
The Matrix ◽  
Sims Analysis ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectrometry (SIMS) and Rutherford Backscattering Spectrometry (RBS) techniques were used to determine InxGa1-xN and AlxGa1-xN compositions. While RBS is generally considered a quantitative technique for compositional analysis, SIMS has not been. We have applied a new analytical technique, which reduces the matrix effect in SIMS analysis, to accurately determine stoichiometry. The composition of InxGa1-xN (AlxGa1-xN) in the multiple layers and quantum well of the LED can be measured by SIMS, but is inaccessible to RBS.

SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers

1995 ◽  
Vol 386 ◽  
Author(s):  
Stephen P. Smith ◽  
Larry Wang ◽  
Jon W. Erickson ◽  
Victor K. F. Chia
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectroscopy ◽  
Metal Contamination ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Industry ◽  
Silicon Wafers ◽  
Analytical Technique ◽  
Surface Metal ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.

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