Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS

1997 ◽  
Vol 468 ◽  
Author(s):  
Y. Gao ◽  
J. Kirchhoff ◽  
S. Mitha ◽  
J. W. Erickson ◽  
C. Huang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Quantum Well ◽  
Matrix Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Compositional Analysis ◽  
Analytical Technique ◽  
The Matrix ◽  
Sims Analysis ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectrometry (SIMS) and Rutherford Backscattering Spectrometry (RBS) techniques were used to determine InxGa1-xN and AlxGa1-xN compositions. While RBS is generally considered a quantitative technique for compositional analysis, SIMS has not been. We have applied a new analytical technique, which reduces the matrix effect in SIMS analysis, to accurately determine stoichiometry. The composition of InxGa1-xN (AlxGa1-xN) in the multiple layers and quantum well of the LED can be measured by SIMS, but is inaccessible to RBS.

Reducing the Matrix Effect in Molecular Secondary Ion Mass Spectrometry by Laser Post-Ionization

2017 ◽  
Vol 121 (36) ◽  
pp. 19705-19715 ◽  
Author(s):  
Lars Breuer ◽  
Nicholas J. Popczun ◽  
Andreas Wucher ◽  
Nicholas Winograd
Keyword(s):  
Mass Spectrometry ◽  
Matrix Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
The Matrix ◽  
Secondary Ion

The matrix effect in organic secondary ion mass spectrometry

2015 ◽  
Vol 377 ◽  
pp. 599-609 ◽  
Author(s):  
Alexander G. Shard ◽  
Steve J. Spencer ◽  
Steve A. Smith ◽  
Rasmus Havelund ◽  
Ian S. Gilmore
Keyword(s):  
Mass Spectrometry ◽  
Matrix Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
The Matrix ◽  
Secondary Ion

VPD/SIMS Measurement of Surface Al on Silicon Substrates

1992 ◽  
Vol 259 ◽  
Author(s):  
V.K.F. Chia ◽  
R.W. Odom ◽  
R.J. Bleiler ◽  
D.B. Sams ◽  
R.S. Hockett
Keyword(s):  
Mass Spectrometry ◽  
Detection Limit ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Substrates ◽  
Phase Decomposition ◽  
Experimental Protocol ◽  
Analytical Technique ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Preparation Techniques

ABSTRACTAn experimental protocol using secondary ion mass spectrometry to measure Al in vapor phase decomposition (VPD) solutions has been developed to achieve a detection limit of 108 atoms/cm2. The analytical technique is called VPD/SIMS. The procedure utilizes sample preparation techniques developed for microvolume SIMS. Preliminary SIMS analysis of simulated VPD solutions consisting of dilute HF indicate that a theoretical detection limit of 5.7×105 Al atoms/cm2 is possible from a 6″ wafer.

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

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