Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?

1992 ◽  
Vol 260 ◽  
Author(s):  
ZS. J. Horváth
Keyword(s):  
Normal Distribution ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Point Of View ◽  
Lateral Distribution ◽  
Physical Point ◽  
Capacitance Voltage ◽  
Schottky Junctions

ABSTRACTExperimental capacitance-voltage (C-V) characteristics are presented for Au/n-GaAs Schottky contacts. The deviation of the obtained C-V characteristics from the theoretical one including the linear regions of the 1/Ca-V plot may be explained by either the normal or the lognormal lateral distribution of the barrier height. It is concluded that from physical point of view the lognormal lateral distribution of the Schottky barrier height proposed first in this work, is more likely than the normal distribution.

Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

2011 ◽  
Vol 50 ◽  
pp. 036603 ◽  
Author(s):  
Masashi Kato ◽  
Hidenori Ono ◽  
Masaya Ichimura ◽  
Gan Feng ◽  
Tsunenobu Kimoto
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electrochemical Deposition ◽  
Schottky Barrier Height ◽  
Schottky Contacts

Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

2005 ◽  
Vol 864 ◽  
Author(s):  
M. Li ◽  
W. A. Anderson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Dark Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Metal Deposition ◽  
Active Area ◽  
Electrode Spacing ◽  
Metal Semiconductor Metal

AbstractMetal-Semiconductor-Metal photodetectors (MSM-PD's) and simple Schottky diodes were fabricated using a low temperature (LT) technique to greatly reduce the device dark current. LT processing for metal deposition increased Schottky barrier height by improving the interface between metal and semiconductor to reduce the leakage current of the device. The structure consists of a 20 Å oxide over the active area to passivate surface states, a thicker oxide under contact pads to reduce dark current and the interdigitated Schottky contacts. A comparison was made for Schottky metal deposited with the substrate at 25 °C or -50 °C (LT). The devices fabricated using the LT process had better I-V characteristics compared to detectors fabricated using the standard room temperature (RT) metal deposition technique. The dark current for the LT film was found to be one to three orders lower in magnitude compared to the film deposited at RT. In one case, for example, the dark current was significantly reduced from 1.69 nA to 4.58 pA at 1.0 V. The active area for the device was determined to be 36 × 50 μm2 with 4 μm electrode width and 4 μm electrode spacing. Additionally, LT-MSM-PD's exhibited an excellent linear relationship between the photo-current and the incident light power. The Schottky barrier height for LT processing was found to be 0.79 eV; however, this value was 0.1 eV more than that of the same contact obtained by RT processing.

Thermal Annealing Effects Study on Electrical and Structural Properties for Ni-Au/n-GaN Schottky Contacts

2013 ◽  
Vol 284-287 ◽  
pp. 241-244 ◽  
Author(s):  
Chi Yu Wang ◽  
Hung Pin Shiao ◽  
Po Wei Shieh ◽  
Hsin Hua Chang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Thermal Annealing ◽  
Schottky Barrier Height ◽  
Annealing Process ◽  
Schottky Contacts ◽  
Interfacial Structure ◽  
Annealing Effects ◽  
Thermal Annealing Process ◽  
Ultraviolet Photodetectors

Abstract. The effects of thermal annealing on the electrical and interfacial structure properties of Ni/Au on n-type GaN Schottky contacts were investigated by current-voltage (I-V) . Based on the I-V measurement study, it was found that the Schottky barrier height increased when the contact was annealed in the 300 °C – 400 °C temperature range. A drastic improvement of the Schottky barrier height was attained by thermal annealing at 400 °C for 10 minutes. However, it degraded when the annealing temperature exceeded 500 °C. The contact annealed at 550 °C showed nonrectifying behavior. For this paper, the GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors were fabricated using Ni/Au Schottky contacts. As expected, compared with the MSM detector without the thermal annealing process, the dark current of the MSM device with the 400 °C thermal annealing process drastically decreased as much as three orders of magnitude, due to the enhancement of the Schottky barrier height

Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

2001 ◽  
Vol 693 ◽  
Author(s):  
Y.G. Zhou ◽  
B. Shen ◽  
H.Q. Yu ◽  
J. Liu ◽  
H.M. Zhou ◽  
...  
Keyword(s):  
Charge Density ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Doping Level ◽  
Schottky Barrier Height ◽  
Partial Relaxation ◽  
Capacitance Voltage ◽  
Induced Charge Density ◽  
Induced Charge

AbstractA method based on Schottky capacitance-voltage (C-V) simulation was developed to extract the polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructures. There are two characteristic slopes in the experimental and simulated C-V curves.The influences of the polarization-induced charge density, n-AlGaN doping level and the Schottky barrier height on the positions of the two slopes in the C-V curves are much different from each other. The polarization-induced charge density can be extracted accurately by fitting the experimental C-V curves. It is extracted to be 6.78 x 1012cm-2in modulation-doped Al0.22Ga0.78N/GaN heterostructures with the Al0.22Ga0.78N thickness of 30 nm or 45 nm. The charge density reducesto 1.30 x 1012cm-2in the heterostructure with the Al0.22Ga0.78N thickness of 75 nm. It is thought that the reduction of the polarization-induced charges at the heterointerface is due to the partial relaxation of the Al0.22Ga0.78N layer on GaN.

scholarly journals Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures

2008 ◽  
Vol 37 (5) ◽  
pp. 624-627 ◽  
Author(s):  
Chung-Yu Lu ◽  
Edward Yi Chang ◽  
Jui-Chien Huang ◽  
Chia-Ta Chang ◽  
Mei-Hsuan Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Tungsten Nitride

Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

2011 ◽  
Vol 50 (3R) ◽  
pp. 036603 ◽  
Author(s):  
Masashi Kato ◽  
Hidenori Ono ◽  
Masaya Ichimura ◽  
Gan Feng ◽  
Tsunenobu Kimoto
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electrochemical Deposition ◽  
Schottky Barrier Height ◽  
Schottky Contacts
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