Electronic Stopping of Channeled Ions in Silicon
ABSTRACTConcentration profiles of channeling and random implants of boron, phosphorus, and arsenic in silicon are compiled from the literature and are analyzed using Monte Carlo simulations. An empirical 3-parameter model of the electronic stopping power is found which yields excellent results for all channeling directions in the energy range of about 20 keV to 1 MeV. The model contains a local impact parameter dependent part and a nonlocal part, the latter increasing with ion energy. In addition, local electron density dependent stopping power models are investigated, using a realistic electron density distribution obtained by first principles band structure calculations. These models fail to describe the slowing down of ions channeled along the <110> axis.