Optimization of Optoelectronic Properties of a-SiC:H Films

Amorphous silicon carbide films have been deposited by PECVD in SiH4+CH4+H2 mixtures at different hydrogen dilutions. The optoelecuonic properties of the films have been measured by transmittance-reflectance spectroscopy, photothermal deflection spectroscopy and photo and dark electrical conductivity. Structural properties have been obtained by FTIR spectroscopy. It was found that high hydrogen dilution leads to materials of improved quality, p-i-n device structures have been deposited with intrinsic layers at different hydrogen dilution levels.

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Electronic and Optical Properties of a-Si1−xCx:H Films Produced From Admixtures of Silane and Ditertiarybutylsilane

MRS Proceedings ◽

10.1557/proc-336-553 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 1

Author(s):

K. Gaughan ◽

J.M. Viner ◽

P.C. Taylor

Keyword(s):

Electrical Conductivity ◽

Silicon Carbide ◽

Optical Properties ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Photothermal Deflection Spectroscopy ◽

Optical And Electronic Properties ◽

Photothermal Deflection

ABSTRACTWe investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.

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Defects in Hydrogenated Amorphous Silicon Carbide Alloys using Electron Spin Resonance and Photothermal Deflection Spectroscopy

MRS Proceedings ◽

10.1557/proc-1153-a18-05 ◽

2009 ◽

Vol 1153 ◽

Author(s):

Brian J. Simonds ◽

Feng Zhu ◽

Josh Gallon ◽

Jian Hu ◽

Arun Madan ◽

...

Keyword(s):

Silicon Carbide ◽

Electron Spin Resonance ◽

Amorphous Silicon ◽

Electron Spin ◽

Carbon Concentration ◽

Hydrogenated Amorphous Silicon ◽

Photothermal Deflection Spectroscopy ◽

Spin Resonance ◽

Photothermal Deflection ◽

Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon carbide alloys are being investigated as a possible top photoelectrode in photoelectrochemical cells used for hydrogen production through water splitting. In order to be used as such, it is important that the effects of carbon concentration on bonding, and thus on the electronic and optical properties, is well understood. Electron spin resonance experiments were performed under varying experimental conditions to study the defect concentrations. The dominant defects are silicon dangling bonds. At room temperature, the spin densities varied between 1016 and 1018 spins/cm3 depending on the carbon concentration. Photothermal deflection spectroscopy, which is an extremely sensitive measurement of low levels of absorption in thin films, was performed to investigate the slope of the Urbach tail. These slopes are 78 meV for films containing the lowest carbon concentration and 98 meV for those containing the highest carbon concentration.

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