New Compound Semiconductor Materials for Nuclear Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
Michael R. Squillante ◽  
John Zhang ◽  
Chuxin Zhou ◽  
Paul Bennett ◽  
Larry Moy
Keyword(s):  
Radiation Detection ◽  
Radiation Detectors ◽  
Compound Semiconductor ◽  
Nuclear Radiation ◽  
Semiconductor Materials ◽  
New Materials ◽  
Scientists And Engineers ◽  
Nuclear Detectors ◽  
Radiation Measurements

ABSTRACTIn many instances, the ability of scientists and engineers to make nuclear radiation measurements is only limited by the properties of available radiation detectors. Because of this, research into new semiconductor materials for radiation detection has been, and continues to be, a very active field. This article reviews recent research on several promising “new” materials.

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C

2009 ◽  
Vol 615-617 ◽  
pp. 853-856
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski
Keyword(s):  
Collection Efficiency ◽  
Amplitude Spectrum ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Charge Collection Efficiency ◽  
Radiation Induced ◽  
Two Stages ◽  
Nuclear Detectors ◽  
Nuclear Radiation Detectors ◽  
Induced Defects

The effect of a cycle "introduction of defects – annealing – introduction of defects" on the SiC properties has been studied to know the degradation of characteristics of p-n- nuclear radiation detectors. The irradiation with 8 МeV protons at fluences of about 3×1014 сm-2 was used. The annealing was carried out in two stages one-hour at temperatures of 600 and 700 °С. Nuclear spectrometric techniques with 5.8 MeV -particles were employed to test the detectors. The charge collection efficiency and features of the amplitude spectrum were determined to study the capture of charge carriers by radiation-induced defects. Measurements were made in the temperature range of 20–250 °С. It is shown that at 250 °С there is a decrease in the carriers capture. The form of the amplitude spectrum essentially improves. The first irradiation and the subsequent annealing do not change significantly the radiation hardness of SiC. During the second irradiation the effective concentration of the introduced centers is 1.3 times higher. This result may be due to the high total fluence of protons, 6×1014 cm-2.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

scholarly journals Nuclear Radiation Detection

Physics Today ◽  
1958 ◽  
Vol 11 (10) ◽  
pp. 34-34 ◽  
Author(s):  
William J. Price ◽  
R. M. Williamson
Keyword(s):  
Radiation Detection ◽  
Nuclear Radiation

GaN Radiation Detection Research Based on Monte Carlo Method

2014 ◽  
Vol 668-669 ◽  
pp. 1011-1014
Author(s):  
Yang Liu ◽  
Guo Zheng Zhu ◽  
Zhen Ni Xing
Keyword(s):  
Monte Carlo ◽  
Energy Deposition ◽  
Detection Efficiency ◽  
Hadron Collider ◽  
Radiation Detection ◽  
Radiation Energy ◽  
Radiation Detectors ◽  
Detection Mechanism ◽  
Radiation Beam ◽  
The Impact

Gallium nitride (GaN) is the third generation of semiconductor material; it has a large band gap, high thermal conductivity, low dielectric constant, high drift speed, etc. Radiation detectors based on GaN material have small volume, high radiation resistance, and fast response, can be used to replace the existing Large Hadron Collider vertex detector and track detector. Energy deposition characteristic of GaN detectors to radiation beam is an important factor for detection efficiency, and there are many factors that affect the energy deposition characteristics of the detector, like the detection mechanism, the impact of material properties, the type of incident ray, radiation energy, and many other factors. This paper studies the physical properties of GaN detector by calculation based on Monte Carlo simulation. Energy deposition characteristics are discussed respectively for incident γ-ray with different energy, in the front-end and back-end add PTFE material. The results of our study present the theoretical properties of GaN radiation detectors.

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