Modelling Photoelectron Effects In X-Ray Lithography
AbstractThe study of photoelectron effects in X-ray Lithography motivates the need for modeling codes to simulate these effects to have an estimate of the influence of x-ray generated photoelectrons in the exposure of resists. We have performed a series of Monte Carlo simulations to study the spatial distribution of photoelectrons in a resist, PMMA, and parametrized this distribution with a set of energy-dependent gaussians for monochromatic X-rays within an energy range of 0.5 KeV to 2.5 KeV. We discuss the effects of the the redistribution of the photoelectron kinetic energy as a function of the electrons generated by the x-ray absorption in various atomic species.
2003 ◽
Vol 119
(17)
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pp. 9233-9241
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2014 ◽
Vol 118
(46)
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pp. 10967-10973
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