scholarly journals Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
T. A. Friedmann ◽  
D. L. Medlin ◽  
P. B. Mirkarimi ◽  
K. F. McCarty ◽  
E. J. Klaus ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Growth Parameters ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Growth Time ◽  
Grain Sizes ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Parametric Studies ◽  
Boron Nitride Films

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (25 - 800°C) Si (100) surfaces and are using a broad-beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. In order to understand and optimize the growth and nucleation of cBN films, parametric studies of the growth parameters have been performed. The best films to date show >85% sp3-bonded BN as determined from Fourier-transform infrared (FTIR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 30- 40 nm. We find from both the FTIR and TEM analyses that the cBN content in these films evolves with growth time. Initially, the films are deposited as hBN and the cBN nucleates on this hBN underlayer. Importantly, the position of the cBN IR phonon also changes with growth time. Initially this mode appears near 1130 cm-1 and the position decreases with growth time to a constant value of 1085 cm-1. Since in bulk cBN this IR mode appears at 1065 cm-1, a large compressive stress induced by the ion bombardment is suggested. In addition, we report on the variation in cBN percentage with temperature.

Ion-Assisted Pulsed Laser Deposition of Cubic Boron Nitride on Si (100) Substrates

1992 ◽  
Vol 285 ◽  
Author(s):  
T. A. Friedmann ◽  
K. F. Mccarty ◽  
E. J. Klaus ◽  
H. A. Johnsen ◽  
D. L. Medlin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Ion Source ◽  
Laser Deposition ◽  
Reflection Spectroscopy ◽  
Grain Sizes ◽  
Broad Beam ◽  
Selected Area Electron Diffraction ◽  
Ir Reflection ◽  
Transmission Electron

ABSTRACTWe are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN (hBN) targets to form cubic BN (cBN) films. We are depositing BN films on heated (400°C) Si (100) surfaces and are using a broad beam ion source operated with Ar and N2 source gasses to produce BN films with a high percentage of sp3-bonded cBN. The best films to date show ∼85% sp3-bonded BN as determined from infrared (IR) reflection spectroscopy. High resolution transmission electron microscopy (TEM) and selected area electron diffraction (SAD) confirm the presence of cBN in these samples. The films are polycrystalline and show grain sizes up to 500 Å.

X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon

1990 ◽  
Vol 202 ◽  
Author(s):  
G. L. Doll ◽  
J. A. Sell ◽  
A. Wims ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matching ◽  
Excimer Laser Ablation ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the growth of boron nitride films on (001), (110), and (111) faces of silicon using the method of pulsed excimer laser ablation. The structure of the Alms grown on the (001) and (110) orientations of Si is cubic zincblende with a lattice constant of 3.619 Å. The films were found to be heteroepitaxial on silicon (001) with the cubic BN (100) axes parallel to Si (100), as characterized by x-ray diffraction and high-resolution transmission electron microscopy. In that system, we find evidence for an unusual 3:2 commensurate lattice matching. The films appear to cubic but randomly oriented on the Si (110), and no evidence for crystallinity is found for films grown on Si (111).

Laser Deposited Cubic Boron Nitride Films

1990 ◽  
Vol 191 ◽  
Author(s):  
Gary L. Doll ◽  
Jeffrey A. Sell ◽  
Lourdes Salamanca-riba ◽  
Ashwin K. Ballal
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Optical Emission ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTWe report the successful growth of cubic boron nitride thin films on single crystal 100 silicon by using pulsed excimer laser ablation of a hexagonal boron nitride bulk target. Optical emission spectra were obtained during the film deposition giving insight into the deposition mechanism. The deposited films were characterized by transmission electron microscopy, scanning electron microscopy, optical microscopy, x-ray diffraction, and Auger electron microscopy. Regions of the films were found to exhibit epitaxy with the substrate.

Cathodoluminescence Spectroscopy of Boron Nitride Films

1994 ◽  
Vol 339 ◽  
Author(s):  
C. A. Taylor ◽  
S. W. Brown ◽  
V. Subramaniam ◽  
S. Kidner ◽  
S. C. Rand ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Deep Level ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Growth Conditions ◽  
Ion Source ◽  
Substrate Bias Voltage ◽  
Cathodoluminescence Spectroscopy ◽  
Boron Nitride Films

ABSTRACTWe report results from cathodoluminescence spectroscopy of boron nitride films grown on Si (100) substrates by ECR ion source assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near-bandgap region for hexagonal boron nitride films at energies of 4.90 eV, 5.31 eV, and 5.50 eV. In addition, deep-level emission spectra of predominantly cubic boron nitride films are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.

Preferentially Oriented Cubic Boron Nitride Films Grown on Si (001) Substrates by Ion Assisted Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-riba ◽  
G. L. Doll ◽  
C. A. Taylor ◽  
R. Clarke
Keyword(s):  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Boron Nitride Films

ABSTRACTPreferentially oriented and extremely adherent cubic boron nitride films have been obtained using ion-assisted pulsed laser deposition on (001) Si substrates. The films were ∼ 1800 Å thick, optically transparent and formed an antireflective coating on the Si substrate. Infrared transmittance spectra showed a strong absorption peak at 1080 cm−1, indicating sp3 bonded film. Cross-sectional and plan-view transmission electron microscopy indicate that the cubic boron nitride films are polycrystalline having cubic zinc-blende crystal structure and a lattice constant of 3.62 Å. A preferred texture is observed with the [110] axis of cubic boron nitride parallel to [001] axis of silicon.

scholarly journals Preparation of cubic boron nitride films by radio frequency sputtering

2006 ◽  
Vol 55 (10) ◽  
pp. 5441
Author(s):  
Tian Ling ◽  
Ding Yi ◽  
Chen Hao ◽  
Liu Jun-Kai ◽  
Deng Jin-Xiang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Radio Frequency ◽  
Cubic Boron Nitride ◽  
Radio Frequency Sputtering ◽  
Boron Nitride Films

Growth process of cubic boron nitride films in bias sputter deposition

1997 ◽  
Vol 295 (1-2) ◽  
pp. 137-141 ◽  
Author(s):  
Yukiko Yamada ◽  
Yoshinao Tatebayashi ◽  
Osamu Tsuda ◽  
Toyonobu Yoshida
Keyword(s):  
Boron Nitride ◽  
Growth Process ◽  
Cubic Boron Nitride ◽  
Sputter Deposition ◽  
Boron Nitride Films
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