Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films

1993 ◽  
Vol 321 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Excimer Laser ◽  
Single Pulse ◽  
Pulse Irradiation ◽  
Multiple Pulse ◽  
Melting Phenomenon ◽  
Irradiation Energy ◽  
Crystallization Experiments ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

ABSTRACTWe have experimentally Investigated the effects that are associated with Multiple-pulse irradiation in the excimer laser processing of thin Si films on SiO2. Double-pulse irradiation experiments revealed results, which are consistent with that which is known from single-pulse crystallization experiments, and these experiments confirm the applicability of the transformation scenarios, which were derived from single pulse-induced crystallization experiments [1,2]. The results from the Multiple-pulse irradiation experiments clearly show that gradual and substantial grain enlargement can occur — and only occurs — when the irradiation energy density is close to but less than the level that is required to melt the film completely. Based on these findings, we argue that the grain enlargement effect is a near-complete melting phenomenon that is associated with polycrystalline Si films, and we present a grain boundary melting model to account for this phenomenon. A brief discussion on the apparent similarities and physical differences between the observed phenomenon and the solid state grain growth processes is provided herein.

Metal-induced crystallization of hydrogenated amorphous Si films

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 953-955 ◽  
Author(s):  
C.C. Tsai ◽  
R.J. Nemanich ◽  
M.J. Thompson ◽  
B.L. Stafford
Keyword(s):  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Grain Boundary Location-Controlled Polt-Si Films for Tft Devices Obtained Via Novel Excimer Laser Process

1994 ◽  
Vol 358 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Grain Boundary ◽  
Excimer Laser ◽  
Crystallization Process ◽  
Critical Distance ◽  
Capping Layer ◽  
Complete Melting ◽  
Boundary Location ◽  
Si Films ◽  
Active Channel ◽  
Induced Crystallization

ABSTRACTBased on a previously acquired physical understanding of the excimer-laser-induced crystallization process, we have developed a new crystallization technique that produces controlled microstructures and possesses a wide processing window. A patterned oxide capping layer was used as an antireflective coating to induce complete melting of an Si film under an SiO2 pattern, and partial melting of the Si film in the areas not under the capping layer—allowing controlled super lateral growth to proceed from the incompletely melted portion of the film to the completely melted portion. For the simple stripes used in this investigation, when the width of the completely molten region is less than a critical distance (above which nucleation of solids occurs in the middle of the completely melted regions), the resulting microstructure has large and elongated grains with one precisely located grain boundary running parallel to the stripe In the middle of the oxide capped region.Arrangement of TFT devices on the resulting Grain boundary Location-Controlled (GLC) Si films with one (or zero) grain boundaries located perpendicular to the flow of electrons within the active channel portion of the TFT devices is illustrated. Such devices are expected to possess performance and uniformity characteristics that are superior to currently available poly-Si TFT devices.

Stress Effects on Nanocrystal Formation by Ni-Induced Crystallization of Amorphous Si

2003 ◽  
Vol 762 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
Mahmooda Sultana ◽  
James D. Plummer
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Crystallization Rate ◽  
Chemical Vapor ◽  
Sputtering Deposition ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractMetal-induced crystallization (MIC) of amorphous Si is gaining increased interest because of its potential use for low-temperature fabrication of integrated circuits. In this work, the MIC technique was used to make Si nanocrystals and the effects of stress on the crystallization were studied. Amorphous Si films were deposited onto the Si substrate with thermal oxides on top by low-pressure chemical vapor deposition (LPCVD) and then patterned into nanoscale pillars by electron beam lithography and reactive ion etching. A conformal low-temperature oxide (LTO) layer was deposited to cover the pillars, followed by an anisotropic etch back to form a spacer, leaving only the top surface of the pillars exposed to the 5 nm Ni sputtering deposition afterwards. An HF dip was used to partially remove the LTO spacers on the pillars, leading to different LTO thicknesses on different samples. These samples were then annealed to crystallize the amorphous Si pillars, forming Si nanocrystals. Transmission electron microscope (TEM) observations after anneal found a clear dependence of the crystallization rate on the pillar size as well as the LTO thickness. The crystallization rate was lower for pillars with thicker LTO spacers, while for the same LTO thickness the crystallization rate was lower for pillars with narrower width. A model based on the stress in the pillars is proposed to explain this dependence. This model suggests some methods to control the nickel-induced crystallization process and achieve higher quality Si nanocrystals.

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

1989 ◽  
Vol 43 (1-4) ◽  
pp. 142-149 ◽  
Author(s):  
E.L. Mathé ◽  
J.G. Maillou ◽  
A. Naudon ◽  
E. Fogarassy ◽  
M. Elliq ◽  
...  
Keyword(s):  
Excimer Laser ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optical Reflectivity ◽  
Laser Recrystallization ◽  
Amorphous Si ◽  
Si Films

Characterization and PL Properties of Ge-Induced Crystallization of a-Si Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 366 ◽  
pp. 99-102 ◽  
Author(s):  
Kun Yong Kang ◽  
Shu Kang Deng ◽  
Rui Ting Hao ◽  
De Cong Li
Keyword(s):  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Atomic Force ◽  
Result Show ◽  
Spectrum Band ◽  
Amorphous Si ◽  
Pl Spectrum ◽  
Si Films ◽  
Induced Crystallization

In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.

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