Single-Source Precursors to Niobium Nitride and Tantalum Nitride Films

MRS Proceedings ◽

10.1557/proc-327-103 ◽

1993 ◽

Vol 327 ◽

Cited By ~ 16

Author(s):

Charles H. Winter ◽

Kumudini C. Jayaratne ◽

James W. Proscia

Keyword(s):

Thin Films ◽

Niobium Nitride ◽

Tantalum Nitride ◽

Single Source ◽

Single Source Precursors ◽

Temperature Range ◽

Glass Substrates

AbstractHerein we report our efforts to prepare new precursors to niobium nitride (NbN) and tantalum nitride (TAN, Ta3N5) thin films. Treatment of MC15 (M = Nb, Ta) with tertbutylamine in benzene solvent affords complexes of the formula [MCI2 (NtBu)(NHtBu)(NH2tBu)]2. The niobium complex [NbC12(NtBu)(NHtBu)- (NH2tBu)]2 affords NbN films on glass substrates between 500-600 °C, while the tantalum analog [TaC12(NtBu)(NHtBu)(NH2tBu)]2 gives films of Ta3N5 in this temperature range. Treatment of MCI5 (M = Nb, Ta) with 1,1-dimethylhydrazine in dichloromethane solvent affords complexes of the formula [MC12(NNMe2)(NHNMe2)(NH2NMe2)]n. These hydrazido complexes afford cubic MN films upon glass substrates at ≥400°C. Analyses of the films are presented.

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Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

Journal of Materials Chemistry ◽

10.1039/b515362j ◽

2006 ◽

Vol 16 (10) ◽

pp. 966-969 ◽

Cited By ~ 44

Author(s):

Shivram S. Garje ◽

Jamie S. Ritch ◽

Dana J. Eisler ◽

Mohammad Afzaal ◽

Paul O'Brien ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Single Source Precursors ◽

Semiconductor Thin Films

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MOCVD of tantalum nitride thin films from TBTEMT single source precursor as metal electrodes in CMOS applications

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2007.04.074 ◽

2007 ◽

Vol 201 (22-23) ◽

pp. 9154-9158 ◽

Cited By ~ 12

Author(s):

M. Lemberger ◽

S. Thiemann ◽

A. Baunemann ◽

H. Parala ◽

R.A. Fischer ◽

...

Keyword(s):

Thin Films ◽

Tantalum Nitride ◽

Single Source ◽

Metal Electrodes ◽

Single Source Precursor

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Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

MRS Proceedings ◽

10.1557/proc-606-127 ◽

1999 ◽

Vol 606 ◽

Author(s):

Mike R. Lazell ◽

Paul O'brien ◽

David J. Otway ◽

Jin-Ho Park

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Sulfide ◽

Chemical Vapor ◽

Single Source ◽

Group 13 ◽

Single Source Precursors ◽

Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

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Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

Dalton Transactions ◽

10.1039/c7dt04694d ◽

2018 ◽

Vol 47 (31) ◽

pp. 10536-10543 ◽

Cited By ~ 1

Author(s):

Kelly Rees ◽

Emanuela Lorusso ◽

Samuel D. Cosham ◽

Alexander N. Kulak ◽

Geoffrey Hyett

Keyword(s):

Thin Films ◽

Phase Space ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

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ChemInform Abstract: Indium tert-Butylthiolates as Single Source Precursors for Indium Sulfide Thin Films: Is Molecular Design Enough?

ChemInform ◽

10.1002/chin.199332023 ◽

2010 ◽

Vol 24 (32) ◽

pp. no-no

Author(s):

A. N. MACINNES ◽

M. B. POWER ◽

A. F. HEPP ◽

A. R. BARRON

Keyword(s):

Thin Films ◽

Molecular Design ◽

Indium Sulfide ◽

Single Source ◽

Single Source Precursors

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Synthesis and properties of MoCl4complexes with thio- and seleno-ethers and their use for chemical vapour deposition of MoSe2and MoS2films

Dalton Transactions ◽

10.1039/c7dt04352j ◽

2018 ◽

Vol 47 (7) ◽

pp. 2406-2414 ◽

Cited By ~ 4

Author(s):

Yao-Pang Chang ◽

Andrew L. Hector ◽

William Levason ◽

Gillian Reid ◽

Joshua Whittam

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Single Source ◽

Chloride Complexes ◽

Single Source Precursors

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.

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