The Selectivity of Reactive Ion Etch of Ga0.5LIn0.49P/Gaas

MRS Proceedings ◽

10.1557/proc-337-755 ◽

1994 ◽

Vol 337 ◽

Cited By ~ 1

Author(s):

J.W. Wu ◽

S.H. Chan ◽

K.C. Lin ◽

C.Y. Chang ◽

E.Y. Chang

Keyword(s):

Etch Rate ◽

Etching Rate ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Gas Mixture ◽

Precise Control

ABSTRACTThe Ga0.51In0.49p/GaAs system has better desired property (ΔEC >ΔEV) than the conventional AlGaAs/GaAs system for heterojunction bipolar transistor (HBT) application. However, in the fabrication of HBTs, a precise control of the etch of the epilayer is very important. In this study, CH4/H2 and BCl3/SF6 were used for the reactive ion etch of the Ga0.51In0.49P/GaAs. It is found that the etch rate of Ga0.51In0.49P could be higher than that of GaAs with CH4/H2 gas mixture under appropriate etching conditions. While in the case of BCl3/SF6, the etching rate of GaAs could be much higher than that of the Ga0.51In0.49P. By properly using CH4/H2 and BCl3/SF6, the fabrication of Ga0.51In0.49P-based device using reactive ion etch could be easily achieved.

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Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist

MRS Proceedings ◽

10.1557/proc-595-f99w11.70 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

C.A. Carosella ◽

B. Molnar ◽

S. Schiestel ◽

J.A. Sprague

Keyword(s):

Ion Implantation ◽

Etch Rate ◽

Etching Rate ◽

Amorphous Region ◽

Wet Etching ◽

Gas Mixture ◽

Etching Depth ◽

Crystalline Films ◽

Etch Rates ◽

Ion Implanted

AbstractThe photoresist developer AZ-400K, commonly used to remove AlN encapsulant layers on GaN crystalline films, is found to also etch certain as-grown GaN films. Even as-grown GaN films, which can not be etched in AZ-400K, however can be etched if amorphized by ion implantation. Etch rates of as high as 450 Å/min. were observed. The etching proceeds linearly in GaN in the first few minutes to a depth corresponding to the depth of the amorphous region. Subsequently, the etching rate saturates. Annealing of the highly amorphized samples up to 1000°C for one minute in a N2/H2 gas mixture does not reduce the etch rate, but for lower doses we observed a reduction of the etch rate. Observations of etching depth under various ion-implanted conditions could be correlated with the number of displacements per atoms (dpa) required for amorphization.

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Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300005184 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 859-865 ◽

Cited By ~ 1

Author(s):

C.A. Carosella ◽

B. Molnar ◽

S. Schiestel ◽

J.A. Sprague

Keyword(s):

Ion Implantation ◽

Etch Rate ◽

Etching Rate ◽

Amorphous Region ◽

Wet Etching ◽

Gas Mixture ◽

Etching Depth ◽

Crystalline Films ◽

Etch Rates ◽

Ion Implanted

The photoresist developer AZ-400K, commonly used to remove AlN encapsulant layers on GaN crystalline films, is found to also etch certain as-grown GaN films. Even as-grown GaN films, which can not be etched in AZ-400K, however can be etched if amorphized by ion implantation. Etch rates of as high as 450 Å/min. were observed. The etching proceeds linearly in GaN in the first few minutes to a depth corresponding to the depth of the amorphous region. Subsequently, the etching rate saturates. Annealing of the highly amorphized samples up to 1000°C for one minute in a N2/H2 gas mixture does not reduce the etch rate, but for lower doses we observed a reduction of the etch rate. Observations of etching depth under various ion-implanted conditions could be correlated with the number of displacements per atoms (dpa) required for amorphization.

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