Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist

1999 ◽  
Vol 595 ◽  
Author(s):  
C.A. Carosella ◽  
B. Molnar ◽  
S. Schiestel ◽  
J.A. Sprague
Keyword(s):  
Ion Implantation ◽  
Etch Rate ◽  
Etching Rate ◽  
Amorphous Region ◽  
Wet Etching ◽  
Gas Mixture ◽  
Etching Depth ◽  
Crystalline Films ◽  
Etch Rates ◽  
Ion Implanted

AbstractThe photoresist developer AZ-400K, commonly used to remove AlN encapsulant layers on GaN crystalline films, is found to also etch certain as-grown GaN films. Even as-grown GaN films, which can not be etched in AZ-400K, however can be etched if amorphized by ion implantation. Etch rates of as high as 450 Å/min. were observed. The etching proceeds linearly in GaN in the first few minutes to a depth corresponding to the depth of the amorphous region. Subsequently, the etching rate saturates. Annealing of the highly amorphized samples up to 1000°C for one minute in a N2/H2 gas mixture does not reduce the etch rate, but for lower doses we observed a reduction of the etch rate. Observations of etching depth under various ion-implanted conditions could be correlated with the number of displacements per atoms (dpa) required for amorphization.

scholarly journals Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist

2000 ◽  
Vol 5 (S1) ◽  
pp. 859-865 ◽  
Author(s):  
C.A. Carosella ◽  
B. Molnar ◽  
S. Schiestel ◽  
J.A. Sprague
Keyword(s):  
Ion Implantation ◽  
Etch Rate ◽  
Etching Rate ◽  
Amorphous Region ◽  
Wet Etching ◽  
Gas Mixture ◽  
Etching Depth ◽  
Crystalline Films ◽  
Etch Rates ◽  
Ion Implanted

The photoresist developer AZ-400K, commonly used to remove AlN encapsulant layers on GaN crystalline films, is found to also etch certain as-grown GaN films. Even as-grown GaN films, which can not be etched in AZ-400K, however can be etched if amorphized by ion implantation. Etch rates of as high as 450 Å/min. were observed. The etching proceeds linearly in GaN in the first few minutes to a depth corresponding to the depth of the amorphous region. Subsequently, the etching rate saturates. Annealing of the highly amorphized samples up to 1000°C for one minute in a N2/H2 gas mixture does not reduce the etch rate, but for lower doses we observed a reduction of the etch rate. Observations of etching depth under various ion-implanted conditions could be correlated with the number of displacements per atoms (dpa) required for amorphization.

The Selectivity of Reactive Ion Etch of Ga0.5LIn0.49P/Gaas

1994 ◽  
Vol 337 ◽  
Author(s):  
J.W. Wu ◽  
S.H. Chan ◽  
K.C. Lin ◽  
C.Y. Chang ◽  
E.Y. Chang
Keyword(s):  
Etch Rate ◽  
Etching Rate ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Gas Mixture ◽  
Precise Control

ABSTRACTThe Ga0.51In0.49p/GaAs system has better desired property (ΔEC >ΔEV) than the conventional AlGaAs/GaAs system for heterojunction bipolar transistor (HBT) application. However, in the fabrication of HBTs, a precise control of the etch of the epilayer is very important. In this study, CH4/H2 and BCl3/SF6 were used for the reactive ion etch of the Ga0.51In0.49P/GaAs. It is found that the etch rate of Ga0.51In0.49P could be higher than that of GaAs with CH4/H2 gas mixture under appropriate etching conditions. While in the case of BCl3/SF6, the etching rate of GaAs could be much higher than that of the Ga0.51In0.49P. By properly using CH4/H2 and BCl3/SF6, the fabrication of Ga0.51In0.49P-based device using reactive ion etch could be easily achieved.

Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation

2017 ◽  
Vol 897 ◽  
pp. 367-370
Author(s):  
Sophie Guillemin ◽  
Romain Esteve ◽  
Christian Heidorn ◽  
Gerald Unegg ◽  
Gerald Reinwald ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Monte Carlo Simulations ◽  
Wet Etching ◽  
Etching Solution ◽  
Experimental Findings ◽  
Wet Etch ◽  
Ion Implanted

In this work investigation on wet etching of ion implanted 4H-SiC has been performed. Starting with the search for a suitable etching solution is followed by investigations on how to damage 4H-SiC in an efficient way involving different implantation species in various doses. With the help of Monte Carlo simulations a model for the experimental findings is proposed to derive the limitations for the wet etch capability.

Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process

2009 ◽  
Vol 145-146 ◽  
pp. 227-230 ◽  
Author(s):  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
Hayato Iwamoto ◽  
Yusuke Muraki
Keyword(s):  
Ion Implantation ◽  
Semiconductor Manufacturing ◽  
Etch Rate ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Etching Process ◽  
Shallow Trench Isolation ◽  
Chemical Vapor Deposited ◽  
Trench Isolation ◽  
Implantation Process

Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semiconductor manufacturing, many processes are used to remove oxides damaged during ion implantation or reactive ion etching on the device surface. Therefore, it is very important to understand the etching properties of plasma-less gaseous etching processes for damaged oxides as well as those for other kinds of oxides. In this report, we evaluate the etching properties of one particular plasma-less gaseous etching process for oxide films damaged during the ion implantation process under various conditions and discuss the mechanism of interesting etching properties for the damaged oxides.

scholarly journals Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

2016 ◽  
Vol 7 ◽  
pp. 1461-1470 ◽  
Author(s):  
Siti Noorhaniah Yusoh ◽  
Khatijah Aisha Yaacob
Keyword(s):  
Surface Roughness ◽  
Silicon Nanowires ◽  
Isopropyl Alcohol ◽  
Etching Rate ◽  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Etching Time ◽  
Etching Depth ◽  
Force Microscopy ◽  
Afm Lithography

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications.

Fabrication, chemical etching, and compressive strength of porous biomimetic SiC for medical implants

2008 ◽  
Vol 23 (12) ◽  
pp. 3247-3254 ◽  
Author(s):  
Carmen Torres-Raya ◽  
David Hernandez-Maldonado ◽  
Joaquin Ramirez-Rico ◽  
Carmen Garcia-Gañan ◽  
Antonio R. de Arellano-Lopez ◽  
...  
Keyword(s):  
Compressive Strength ◽  
Etch Rate ◽  
Etching Rate ◽  
Wet Etching ◽  
Etching Time ◽  
Medical Implants ◽  
Diffusion Limited ◽  
Melt Infiltration ◽  
Kinetics Of ◽  
Better Than

BioSiC is a biomimetic SiC-based ceramic material fabricated by Si melt infiltration of carbon preforms obtained from wood. The microstructure of bioSiC mimics that of the wood precursor, which can be chosen for tailored properties. When the remaining, unreacted Si is removed, a SiC material with interconnected porosity is obtained. This porous bioSiC is under study for its use as a medical implant material. We have successfully fabricated bioSiC from Sipo wood and studied the kinetics of Si removal by wet etching. The results suggest that the reaction is diffusion-limited, and the etch rate follows a t−0.5 law. The etching rate is found to be anisotropic, which can be explained attending to the anisotropy of the pore distribution. The compressive strength was studied as a function of etching time, and the results show a quadratic dependence with density. In the attainable range of densities, the strength is similar or better than that of human bone.

Deep Wet Etching Uniformity of Polished Fused Silica Glass

2017 ◽  
Vol 726 ◽  
pp. 404-408 ◽  
Author(s):  
Xiu Rong Du ◽  
Xue Fu Song ◽  
Yuan Cheng Sun ◽  
Xiao Qiang Zhang ◽  
Hui Wang ◽  
...  
Keyword(s):  
Surface Quality ◽  
Silica Glass ◽  
Etching Rate ◽  
Fused Silica ◽  
Wet Etching ◽  
Etching Depth ◽  
In The Beginning ◽  
Fused Silica Glass

Deep wet etching for polished fused silica glass in HF solutions was investigated to manufacture quartz pendulous reed with better surface quality and higher size precision. It is widely believed that etching rate was mostly decided by the temperature and concentration of HF solutions. But, in the beginning it was found difficult to control the uniformity of etching depth when the glass was etched for 0.3 ~ 0.5 mm each side. Now, it is detected with help from new designed etching machine that depth of 0.5mm or more can be achieved very easily. And the uniformity about ±0.002 mm would also be realized easily by keeping the sample glass at same depth and moving all the time in HF solution with the temperature and concentration are 45°C and 40% HF

Optimization of Concentration and Temperature of KOH Etchant on Micromachining Process

2010 ◽  
Author(s):  
Mohsen Shayan ◽  
Behrooz Arezoo ◽  
Ali Amani
Keyword(s):  
Crystal Orientation ◽  
Etch Rate ◽  
Wet Etching ◽  
Etching Process ◽  
Structure Investigation ◽  
Optimal Amount ◽  
Etch Rates ◽  
Wet Etch

Due to vast application of silicon wet etching in Micromachining and MEMS structure, investigation about parameters that have more influence on wet etch rate is indispensable. Wet etch rate is dependent to several factor such as temperature, etchant concentration and crystal orientation. Because of temperature and concentration are more controllable therefore the etch rates R{hkl} depend mainly on concentration and temperature of the etchant. Understanding the relation between this parameters and wet etch rate can assist us in order to control and optimization of micromachining process. This paper present a relation between etchant concentration and temperature and wet etch rate on (100) plane, and then identify the etchant concentration in a certain range of temperature as the wet etch rate be in optimal amount. With optimization the etch rate of wafer (100), necessary time for etching process reduces and this reduction of time can lead to reduction of undercutting at convex and concave corners.

Etch Rate Modeling in MEMS Design

1996 ◽  
Author(s):  
Ted J. Hubbard ◽  
Erik K. Antonsson
Keyword(s):  
Etch Rate ◽  
3D Model ◽  
Three Dimensional ◽  
Wet Etching ◽  
Experimental Measurements ◽  
High Quality ◽  
Arbitrary Plane ◽  
Rate Behavior ◽  
Etch Rates ◽  
The One

Abstract This paper presents a model for determining the full three dimensional etch rate behavior of bulk wet etching of silicon from experimentally determined etch rates of four principal planes: (100), (110), (111), and (311). The etch rate for an arbitrary plane is expressed in terms of the measured planes. The model shows excellent agreement with both experimental measurements and values reported in the literature. For MEMS CAD to be able to accurately predict etched shapes, a high quality 3D model of etch rates such as the one reported here is required.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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