Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe

1994 ◽  
Vol 367 ◽  
Author(s):  
P.O. Pettersson ◽  
R.J. Miles ◽  
T.C. Mcgill

AbstractWe present the results of electron beam assisted molecular beam epitaxy (EB-MBE) on the growth mode of silicon on CaF2/Si(111). By irradiating the CaF2 surface with low energy electrons, the fluorine is desorbed, leaving an ordered array of F-centers behind. Using atomic force microscopy (AFM), we do not detect any surface damage on the CaF2 layer due to the low energy electron irradiation. The surface free energy of the CaF2 is raised due to the F-center array and the subsequent silicon layer is smoother. Using AFM and X-ray photoelectron spectroscopy (XPS), we find an optimal range of exposures for high temperature (650°C) growth of the silicon overlayer that minimizes surface roughness of the silicon overlayer and we present a simple model based on geometrical thermodynamics to explain this.We observed a similar optimal range of exposures that minimizes the surface roughness for medium (575°C) and low (500°C) growth temperatures of the silicon layer. We present an explanation for this growth mode based on kinetics.

1994 ◽  
Vol 01 (04) ◽  
pp. 535-538 ◽  
Author(s):  
S. TURTON ◽  
M. KADODWALA ◽  
ROBERT G. JONES

The desorption of ethene from physisorbed 1, 2-dichloroethane (DCE) and 1-bromo-2-chloroethane (BCE) on Cu(111) has been observed on irradiating the surface with electrons. The techniques used were low energy electron diffraction (LEED), Auger electron spectroscopy (AES), ultraviolet photoelectron spectroscopy (UPS), and mass spectrometric detection of the desorbed species. At 110 K physisorbed DCE and BCE underwent electron capture from low energy (<1 eV ) electrons in the secondary electron yield of the surface followed by decomposition and desorption of ethene alone. The decomposition was found to be first order in the surface coverage of the physisorbed DCE/BCE. No other molecular species desorbed from the surface, a stoichiometric amount of chemisorbed halogen was deposited and no carbon was detectable at the end of the desorption. The formation of the negative ions of these molecules by electron capture of low energy electrons in the secondary electron emission from the surface and the possible dynamics by which the negative ions undergo decomposition leaving the ethene product with sufficient energy to desorb, are discussed.


Author(s):  
T. H. Newman ◽  
R. F. W. Pease ◽  
K. J. Polasko ◽  
Y. W. Yau

Two prominent problems of electron beam lithography are slow throughput and proximity effects. The former arises from the serial nature of the exposure process; the current available in a beam of given resolution is limited by electron optical considerations and the resist sensitivity is limited by material considerations such that a dose of 1 μC/cm2 at 20 kV is required for the most sensitive resist and ten times that dose if high resolution is required.Proximity effects are caused by electrons scattered through lateral distances greater than the resolution of the pattern; a 20 keV electron in silicon has a range of about 3 μm whereas feature sizes are often less than 1 μm. Lowering the energy of the exposing electrons to, say, 2 keV would lower the electron range to less than 0.1 μm in silicon and thus effectively eliminate proximity effects as far as semiconductor circuit fabrication is concerned.


2015 ◽  
Vol 6 ◽  
pp. 1904-1926 ◽  
Author(s):  
Rachel M Thorman ◽  
Ragesh Kumar T. P. ◽  
D Howard Fairbrother ◽  
Oddur Ingólfsson

Focused electron beam induced deposition (FEBID) is a single-step, direct-write nanofabrication technique capable of writing three-dimensional metal-containing nanoscale structures on surfaces using electron-induced reactions of organometallic precursors. Currently FEBID is, however, limited in resolution due to deposition outside the area of the primary electron beam and in metal purity due to incomplete precursor decomposition. Both limitations are likely in part caused by reactions of precursor molecules with low-energy (<100 eV) secondary electrons generated by interactions of the primary beam with the substrate. These low-energy electrons are abundant both inside and outside the area of the primary electron beam and are associated with reactions causing incomplete ligand dissociation from FEBID precursors. As it is not possible to directly study the effects of secondary electrons in situ in FEBID, other means must be used to elucidate their role. In this context, gas phase studies can obtain well-resolved information on low-energy electron-induced reactions with FEBID precursors by studying isolated molecules interacting with single electrons of well-defined energy. In contrast, ultra-high vacuum surface studies on adsorbed precursor molecules can provide information on surface speciation and identify species desorbing from a substrate during electron irradiation under conditions more representative of FEBID. Comparing gas phase and surface science studies allows for insight into the primary deposition mechanisms for individual precursors; ideally, this information can be used to design future FEBID precursors and optimize deposition conditions. In this review, we give a summary of different low-energy electron-induced fragmentation processes that can be initiated by the secondary electrons generated in FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the different nature and energy dependence of each process. We then explore the value of studying these processes through comparative gas phase and surface studies for four commonly-used FEBID precursors: MeCpPtMe3, Pt(PF3)4, Co(CO)3NO, and W(CO)6. Through these case studies, it is evident that this combination of studies can provide valuable insight into potential mechanisms governing deposit formation in FEBID. Although further experiments and new approaches are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors.


1972 ◽  
Vol 5 (3) ◽  
pp. 1016-1020 ◽  
Author(s):  
R. G. Steinhardt ◽  
J. Hudis ◽  
M. L. Perlman

2011 ◽  
Vol 1 (1) ◽  
pp. 13-16
Author(s):  
S. Karakalos

The growth mode of MgCl2 on Au foil and Si (111) 7x7 reconstructed surface under UHV conditions, was investigated by X-ray Photoelectron Spectroscopy (XPS). Magnesium chloride grows with the Frank-van der Merve, (FM) growth mode on the Au foil. On Si surface there is evidence for the layer by layer growth of MgCl2 but leaving uncovered silicon areas at the first steps of deposition due to the Si (111)7x7 surface roughness.


1974 ◽  
Vol 49 (2) ◽  
pp. 155-156 ◽  
Author(s):  
F.L. Battye ◽  
J. Liesegang ◽  
R.C.G. Leckey ◽  
J.G. Jenkin

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