Application of Plasma Anodization Technique to Device Fabrication
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AbstractApplications of plasma anodization technique to Si, GaAs and InP dev-ices fabrication, demonstrated by the author's group, are reviewed. The feature of the technique is an electric field enhanced low temperature oxidation process. Suppression of the generation of oxidation induced stacking faults, the redistribution of impurities in the substrates and the bird's beak formation in selective oxidation process is an advantage in silicon technology. It must be stressed that plasma anodization is only one technique which has been proved to be successful in growing native oxide films on InP substrates for MISFETs fabrication.
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2012 ◽
Vol 2012.8
(0)
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pp. 152-157
2013 ◽
Vol 652-654
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pp. 871-876
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2010 ◽
Vol 205
(1)
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pp. 92-101
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2017 ◽
Vol 35
(13)
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pp. 1321-1326
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2004 ◽
Vol 234
(1-4)
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pp. 197-201
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