Non-Stoichiometric Transfer of Complex Oxides by Pulsed Laser Deposition at Low Fluences

1995 ◽  
Vol 397 ◽  
Author(s):  
B. Dam ◽  
J.H. Rector ◽  
J. Johansson ◽  
DG. DE Groot ◽  
R. Griessen
Keyword(s):  
Phase Separation ◽  
Pulsed Laser Deposition ◽  
Volume Diffusion ◽  
Pulsed Laser ◽  
Target Surface ◽  
Complex Oxides ◽  
The Other ◽  
Laser Deposition ◽  
Other Hand

ABSTRACTWe provide evidence that non-stoichiometric ablation of YBa2Cu3O7δ at low fluences is due to a phase separation of the target surface. On the other hand, in SrTiO3 we find at low fluences evidence for preferential ablation which is assisted by volume-diffusion. As a result, the Sr/Ti ratio of the ablated films can be tuned by choosing the appropriate fluence.

scholarly journals Data mining for better material synthesis: The case of pulsed laser deposition of complex oxides

2018 ◽  
Vol 123 (11) ◽  
pp. 115303 ◽  
Author(s):  
Steven R. Young ◽  
Artem Maksov ◽  
Maxim Ziatdinov ◽  
Ye Cao ◽  
Matthew Burch ◽  
...  
Keyword(s):  
Data Mining ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Complex Oxides ◽  
Laser Deposition ◽  
Material Synthesis

scholarly journals Pulsed Laser Deposition of Bismuth Vanadate Thin Films—The Effect of Oxygen Pressure on the Morphology, Composition, and Photoelectrochemical Performance

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1360
Author(s):  
Konrad Trzciński ◽  
Mariusz Szkoda ◽  
Maria Gazda ◽  
Jakub Karczewski ◽  
Adam Cenian ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Bulk Heterojunction ◽  
Pulsed Laser ◽  
Target Surface ◽  
Thin Layers ◽  
Bismuth Vanadate ◽  
Laser Deposition ◽  
Photoelectrochemical Performance ◽  
Breakdown Spectroscopy

Thin layers of bismuth vanadate were deposited using the pulsed laser deposition technique on commercially available FTO (fluorine-doped tin oxide) substrates. Films were sputtered from a sintered, monoclinic BiVO4 pellet, acting as the target, under various oxygen pressures (from 0.1 to 2 mbar), while the laser beam was perpendicular to the target surface and parallel to the FTO substrate. The oxygen pressure strongly affects the morphology and the composition of films observed as a Bi:V ratio gradient along the layer deposited on the substrate. Despite BiVO4, two other phases were detected using XRD (X-ray diffraction) and Raman spectroscopy—V2O5 and Bi4V2O11. The V-rich region of the samples deposited under low and intermediate oxygen pressures was covered by V2O5 longitudinal structures protruding from BiVO4 film. Higher oxygen pressure leads to the formation of Bi4V2O11@BiVO4 bulk heterojunction. The presented results suggest that the ablation of the target leads to the plasma formation, where Bi and V containing ions can be spatially separated due to the interactions with oxygen molecules. In order to study the phenomenon more thoroughly, laser-induced breakdown spectroscopy measurements were performed. Then, obtained electrodes were used as photoanodes for photoelectrochemical water splitting. The highest photocurrent was achieved for films deposited under 1 mbar O2 pressure and reached 1 mA cm−2 at about 0.8 V vs Ag/AgCl (3 M KCl). It was shown that V2O5 on the top of BiVO4 decreases its photoactivity, while the presence of a bulk Bi4V2O11@BiVO4 heterojunction is beneficial in water photooxidation.

Synthesis of Complex-oxide Nanorods via Pulsed-laser Deposition

2010 ◽  
Vol 1256 ◽  
Author(s):  
John E Mathis ◽  
Gyula Eres ◽  
Claudia Cantoni ◽  
Kyunghoon Kim ◽  
Hans Christen
Keyword(s):  
Pulsed Laser Deposition ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Complex Oxides ◽  
Complex Oxide ◽  
Laser Deposition ◽  
Complex Structures ◽  
Layer By Layer ◽  
Oxide Nanorods ◽  
Layer Control

AbstractNanorods composed of complex oxides have been synthesized using hydrothermal and sol-gel methods, but pulsed-laser deposition (PLD) provides precise, layer-by-layer control of growth, and is the method of choice for synthesizing complex structures. However, producing complex-oxide nanorods by PLD has proved elusive.Here we report on our efforts to produce nanorods composed of the best-understood complex oxide, strontium titanate (STO). The results suggest it is indeed possible to produce STO nanorods via PLD by using a template of MgO nanorods.

THE TARGET MORPHOLOGY DURING PULSED LASER DEPOSITION OF HYDROXYAPATITE THIN FILMS

2005 ◽  
Vol 12 (04) ◽  
pp. 539-543 ◽  
Author(s):  
QUANHE BAO ◽  
CHUANZHONG CHEN ◽  
LUBIN CHEN ◽  
DIANGANG WANG ◽  
TINGQUAN LEI ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
The Other ◽  
Laser Deposition ◽  
Grain Structure ◽  
Before And After ◽  
Modified Surface ◽  
Modified Surface Layer

A modified surface layer of hydroxyapatite (HA) target was observed before and after pulsed laser deposition. Two types of HA targets were used for laser ablation. We observed that the surface morphology of the target has a very fine compacted grain structure and presents many irregularities with some microroughness and microporosity before laser ablation. The laser ablated regions can be divided into two areas: one area is porous and rough but the other is dense and smooth. The percentage of particles in the films was high for the films produced with targets that were sintered at 1200°C.

Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient

2006 ◽  
Vol 88 (7) ◽  
pp. 072906 ◽  
Author(s):  
X. Y. Qiu ◽  
H. W. Liu ◽  
F. Fang ◽  
M. J. Ha ◽  
J.-M. Liu
Keyword(s):  
Phase Separation ◽  
Pulsed Laser Deposition ◽  
Interfacial Reaction ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High K

Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion

2019 ◽  
Vol 126 (18) ◽  
pp. 184301
Author(s):  
D. Del Gaudio ◽  
C. T. Boone ◽  
K. Sallans ◽  
E. Mason ◽  
A. J. Williamson ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Plasma Plume ◽  
Pulsed Laser ◽  
Complex Oxides ◽  
Laser Deposition ◽  
Plume Expansion

Phase separation in oxygen deficient gallium oxide films grown by pulsed-laser deposition

2012 ◽  
Vol 133 (1) ◽  
pp. 135-139 ◽  
Author(s):  
C. Hebert ◽  
A. Petitmangin ◽  
J. Perrière ◽  
E. Millon ◽  
A. Petit ◽  
...  
Keyword(s):  
Phase Separation ◽  
Pulsed Laser Deposition ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Stoichiometry control of complex oxides by sequential pulsed-laser deposition from binary-oxide targets

2015 ◽  
Vol 106 (13) ◽  
pp. 131601 ◽  
Author(s):  
A. Herklotz ◽  
K. Dörr ◽  
T. Z. Ward ◽  
G. Eres ◽  
H. M. Christen ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Complex Oxides ◽  
Binary Oxide ◽  
Laser Deposition ◽  
Stoichiometry Control

Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
R. D. Vispute ◽  
V. Talyansky ◽  
S. Chupoon ◽  
R. Enck ◽  
T. Dahmas ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Surface ◽  
Surface Region ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Ion Channeling ◽  
High Degree

AbstractWe report high quality epitaxial growth of GaN film by pulsed laser deposition technique. In this method, a KrF pulsed excimer laser was used for ablation of a polycrystalline, stoichiometric GaN target. The ablated material was deposited on a substrate kept at a distance of ∼ 7 cm from the target surface and in an NH3 background pressure of 10−5 Torr and temperature of 750°C. The films (∼0.5 μm thick) grown on AIN buffered sapphire showed a x-ray diffraction rocking curve FWHM of 4–6 arc minutes. The ion channeling minimum yield in the surface region was ∼3% indicating a high degree of crystallinity. The optical band gap was found to be 3.4 eV. The epitaxial films were shiny, and the surface RMS roughness was ∼ 5–15 nm. The electrical resistivity of these films was in the range of 10−2–102 Ω-cm with a mobility in excess of 60 cm2V-1s−1 and carrier concentration of 1017–1019cm−3.

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