Light Absorption Effects on the Nd Laser Annealing of Ion Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
P. Baeri ◽  
A.E. Bapbarino ◽  
S.U. Campisano ◽  
M.G. Grimaldi ◽  
G. Foti ◽  
...  
Keyword(s):  
Energy Density ◽  
Heat Flow ◽  
Low Temperature ◽  
Laser Annealing ◽  
Amorphous Material ◽  
Amorphous Layer ◽  
Absorbed Energy ◽  
Pre Treatment ◽  
Crystallization Onset ◽  
Ion Implanted

ABSTRACTThe crystallization onset and the annealing thresholds have been nmeasured as a function of the absorbed energy density in ion implanted amorphous silicon irradiated with nanosecond Nd pulse. Thin amorphous layers (∼500 Å) require higher thresholds ccapared with thick (∼4000 Å) amorphous layers. This result can be explained in terms of balance between absorbed energy and heat flow. For a given thickness of the amorphous layer the thresholds depend on the absorption coefficient of the amorphous material. This last parameter has been varied frcm 104 to 102 CM−1 by low temperature (T<400°C) pre-treatment of the ion implanted sample. The observed drastic variations of both crystallizazion and annealing thresholds agree well with nunerical evaluation of heat flow.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Discharge-Pumped VUV F2 Molecular Laser Annealing of Heavily Se+-Implanted GaAs

1993 ◽  
Vol 316 ◽  
Author(s):  
Hajime Shibata ◽  
Yunosuke Makita ◽  
Kawakatsu Yamada ◽  
Yutaka Uchida ◽  
Sabro Satoh
Keyword(s):  
Energy Density ◽  
Raman Scattering ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Furnace Annealing ◽  
Implantation Energy ◽  
Molecular Laser ◽  
First Time ◽  
Ion Implanted

ABSTRACTThe capability of discharge-pumped vacuum ultraviolet F2 molecular laser for laser annealing of heavily ion implanted semiconductor was demonstrated for the first time using Se+ heavily ion implanted GaAs. Cr-doped semi-insulationg GaAs wafers were used as the substrates, and the Se+ implantation energy and dose were controlled to 100 keV and 1× 1015 cm-2, respectively. Samples were annealed using a F2 molecular laser ( wavelength = 157 nm ) with a single pulse ( width ~ 20 ns ) in the energy density range from 200 to 800 mJ/cm2 in a nitrogen atmosphere. In addition, furnace annealing was done on separate samples at 850 ºC for 20 minutes in a purified hydrogen atmosphere for comparison. Characterization of the samples was carried out using Raman scattering and ellipsometry. The laser annealed samples exhibited intense Raman scattering LO phonon peaks whose intensity increased with increasing laser power density, whereas the furnace annealed samples exhibited a very weak LO phonon peak. It was demonstrated for the first time that VUV photons can be very effective in annealing ion implantation damage as compared with conventional furnace annealing. The behavior of Raman scattering spectra as a function of laser energy density was explained quantitatively by a “spatial correlation” model. The model made it possible to estimate the average size of the recovered crystal regions in samples for any given laser energy density.

Threshold Energy Density for Pulsed Laser Annealing of Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Dick Hoonhout ◽  
Frans Saris
Keyword(s):  
Energy Density ◽  
Layer Thickness ◽  
Laser Annealing ◽  
Threshold Energy ◽  
Amorphous Layer ◽  
Systematic Investigation ◽  
Laser Wavelength ◽  
Threshold Energy Density ◽  
Pulsed Laser Annealing ◽  
Disordered Layer

ABSTRACTWe have made a systematic investigation of the threshold energy density for recrystallization of ion-implanted silicon by Q-switched laser irradiation as function of thickness of the disordered layer, temperature during implantation, type and dose of implanted impurity, laser wavelength, and substrate orientation. Most results have been obtained with a Q-switched ruby laser. A linear dependence of the threshold on layer thickness (in the region of 60–300 nm) was found for arsneic-implanted silicon, but not for silicon-implanted silicon. For an amorphous layer thickness of 200 nm we found very little dependence of the threshold on type of dopant. In the case of the Nd:YAG laser, however, the lowest threshold was observed for column VI elements, the highest for column IV elements and intermediate and equal thresholds for the elements from column III and B. The influence of temperature during implantation was found to be small, but the threshold appeared to be different for (100)- and (111)- oriented substrates.

Formation and Effects of Secondary Defects in Ion implanted Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Jack Washburn
Keyword(s):  
Activation Energy ◽  
Electron Microscope ◽  
Low Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Laser Annealing ◽  
Subsequent Annealing ◽  
Interface Migration ◽  
Kinetics Of ◽  
Ion Implanted

ABSTRACTThe clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Defect-Induced Photoluminescence from Pulsed Laser Annealed Si

1980 ◽  
Vol 1 ◽  
Author(s):  
M S Skolnick ◽  
A G Cullis ◽  
H C Webber
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Solid Phase ◽  
Pulsed Laser ◽  
The Other ◽  
Melted Region ◽  
Other Hand ◽  
Low Temperature Photoluminescence ◽  
Ion Implanted

ABSTRACTLow temperature photoluminescence is used to study damage centers in ion implanted, pulsed laser annealed Si. A number of intense, damage related photoluminescence lines W, G and 13 are observed. It is shown that most of the W (and 13) centers are created by solid phase annealing of implant damage beyond the laser melted region. Peak G, on the other hand, is present in the tail of the implant damage before laser annealing.

Ge+ Preamorphization of Si: Effects of Dose and Very Low Temperature Thermal Treatment on Extended Defect Formation During Subsequent Spe

1985 ◽  
Vol 52 ◽  
Author(s):  
E. Myers ◽  
G. A. Rozgonyi ◽  
D. K. Sadana ◽  
W. Maszara ◽  
J. J. Wortman ◽  
...  
Keyword(s):  
Phase Transition ◽  
Low Temperature ◽  
Defect Formation ◽  
Solid Phase ◽  
Amorphous Material ◽  
Dose Range ◽  
Amorphous Layer ◽  
Extended Defect ◽  
Transmission Electron ◽  
Very Low Temperature

ABSTRACTCross-section transmission electron microscopy (X-TEM) has been used to illustrate the amornhous/ crystalline (a/c) micromorphology dependence of various low dose Ge+ preamorphizatlon implants in Si. Ge+ Implants were done at room _emperature at energies of 150 and 300 keV in the dose range of 1 to 9E14 cm−2. These implants result in the formation of either a buried or a continuous amorphous layer, with rough a/c interfaces. Nucleation of spanning “hairpin” dislocations during subsequent solid phase epltaxy (SPE) regrowth is known to be related to rough a/c interface morphology. Very low temperature anneals (VLTA),less than 500°C where the rate of SPE is minimal, were utilized to sharpen rough a/c interfaces prior to subsequent SPE regrowth. Sharpening of rough a/c interfaces is shown to result from an unexpected reverse crystalline to amorphous phase transition. This reverse phase transition results in the dissolution of detached microcrystallltes located within the amorphous layer near the a/c interface. Utilization of VLTA interfacial smoothing prior to SPE regrowth therfore, results in the reduction of residual spanning “hairpin” dislocations along with homogenization of the amorphous material.

Computer Modelling of Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
P. Baeri
Keyword(s):  
Energy Density ◽  
Heat Flow ◽  
Laser Pulse ◽  
Substrate Temperature ◽  
Pulse Duration ◽  
Laser Annealing ◽  
Computer Modelling ◽  
Main Emphasis ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTHeat flow calculations, based on the main assumption that the energy of the incident pulse is instantaneously and locally converted into heat, are used to review the results of laser pulse annealing and impurities behaviour in ion implanted semiconductors. The crystallization behaviour of amorphous layers, the velocity of the solid-liquid interface and impurity redistribution are detailed with the main emphasis on the relevance of the parameters (laser wavelen gth, pulse duration and energy density, substrate temperature, etc.) that can be experimentally controlled. Comparison with the latest experimental results is also given.

Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam

1987 ◽  
Vol 104 ◽  
Author(s):  
P. Hautojdärvi ◽  
P. Huttunen ◽  
J. Mäkinen ◽  
E. Punkka ◽  
A. Vehanen
Keyword(s):  
Laser Annealing ◽  
Positron Beam ◽  
Amorphous Layer ◽  
Slow Positron ◽  
Clear Separation ◽  
Layer Effect ◽  
Variable Energy ◽  
Ion Implanted

ABSTRACTVariable-energy positron beam studies have been made on ion implanted silicon. After 35, 60 and 100 keV H+ implantation a clear separation between vacancy and H atom distributions was found. In 100 keV As+ and P+ implanted Si the damaged layer extends to 300 and 400 nm, respectively, far beyond the the range of implanted atoms and the amorphous layer. Effect of thermal and laser annealing is also discussed.

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