A Study of Copper Oxide Films Fabricated by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
R. E. Leuchtner ◽  
L. S. Hristakos
Keyword(s):  
Copper Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Laser Fluences ◽  
Target Composition ◽  
Background Gas

AbstractCopper oxide films were grown using the pulsed laser deposition (PLD) method with either a copper metal or a copper oxide target. A variety of deposition pressures of oxygen (0.001–0.3 torr) and temperatures (350, 450, and 550°C) were explored. From x-ray diffraction analysis, epitaxial <100> CuO films were observed at 450°C and either at 0.01 or 0.1 torr for the CuO and the Cu targets, respectively. Deposition rates were measured for the two targets (Cu and CuO) as a function of laser fluence and background gas pressure and enabled a morphological study of films prepared at different laser fluences but of similar film thickness (∼0.3 μm). The number density of particulates as well as the smoothness of the underlying film surface of the CuO films varied significantly with the target composition. The CuO films from the Cu target were the smoothest and had the fewest particulates.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

Epitaxial growth of copper oxide films by reactive cross-beam pulsed-laser deposition

2009 ◽  
Vol 311 (12) ◽  
pp. 3352-3358 ◽  
Author(s):  
W. Seiler ◽  
E. Millon ◽  
J. Perrière ◽  
R. Benzerga ◽  
C. Boulmer-Leborgne
Keyword(s):  
Copper Oxide ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition

X-Ray Diffraction Study of Clusters in a-tC Films

1994 ◽  
Vol 358 ◽  
Author(s):  
L. J. Martínez-Miranda ◽  
T. A. Friedmann ◽  
J. P. Sullivan ◽  
M. P. Siegal ◽  
T. W. Mercer ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Diffraction Study ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Basic Unit ◽  
Unit Size ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTWe performed an X-ray diffraction study of amorphous-tetrahedrally-coordinated carbon (a-tC) films prepared by pulsed laser deposition (PLD). The samples' properties were analyzed as a function of laser energy and thickness. For all thicknesses and laser energies, films were made up of clusters with a basic unit size of 7 -11 nm. Thicker films, as well as films prepared at higher laser densities exhibit larger clusters, in the tens of nanometers. The clusters are not readily observable by AFM, which may indicate the presence of a flat (graphitized) top film surface.

Single- and Multi-target Pulsed Laser Deposition of Thin BSTO films: Preparation, Microstructure and Electrical Properties

2003 ◽  
Vol 784 ◽  
Author(s):  
Kumaravinothan Sarma ◽  
Peter Kr. Petrov ◽  
Neil McN. Alford
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Capacitor Structure

ABSTRACTA comparative study of microstructure and electrical properties of BaxSr1-xTiO3 films made by single- and multi-target pulsed laser deposition was carried out. The films were epitaxially grown on both LaAlO3 and MgO substrates. The structural properties of all samples were investigated using X-ray diffraction and Raman spectroscopy. The elemental composition of the samples was investigated using energy dispersive X-ray analysis. For electrical properties examination, a simple capacitor structure was patterned on the film surface. Thin films made using both methods exhibit similar structural and electrical properties; however the samples made by a multi-target method underwent phase transition in a broader temperature region. The results prove the possibility of using the multi-target pulse laser deposition as a more flexible method for engineering thin film stoichometry.

Ca(1−x)NixO catalytic thin films prepared by pulsed laser deposition

1993 ◽  
Vol 8 (9) ◽  
pp. 2400-2403 ◽  
Author(s):  
X.L. Mao ◽  
D.L. Perry ◽  
R.E. Russo
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sintering Process ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Target Composition ◽  
Madelung Energy ◽  
Compositional Changes

Ca(1−x)NixO solid-solution films with varying stoichiometry have been prepared by pulsed laser deposition from sintered targets of NiO and CaO. X-ray diffraction data indicate that the films have the structure of sodium chloride. The lattice constants for different stoichiometries vary with film composition. Using the Madelung energy as the binding energy between anions and cations and assuming that nickel and calcium ions are distributed randomly in lattice sites, the lattice constants were calculated and found to compare with experimental results. This study investigated the compositional changes that occur during the target sintering process and the pulsed laser deposition of films. Using these data, a target composition can be prepared to produce Ca(1−x)NixO thin films with any desired lattice constant.

Pulsed LASER Deposition of MgO Thin Films

2012 ◽  
Vol 545 ◽  
pp. 38-42 ◽  
Author(s):  
Norlida Kamarulzaman ◽  
Nurhanna Badar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Thin Film Surface ◽  
193 Nm ◽  
Chamber Gas

MgO thin films were deposited by Pulsed Laser deposition using different process parameter. The characteristics were investigated via X-Ray diffraction (XRD), Scanning Electron Microscope (SEM) and Digital Holographic Microscope (DHM). It is found that the thin film surface morphology and thickness are different. It was found that the different process parameters such as chamber gas pressure, substrate temperature, LASER energy and number of pulses greatly influence the characteristics of the thin films obtained. The thin films have very low thicknesses of 97, 187 and 193 nm.

Large-Area Pulsed Laser Deposition of Tantalum Oxide Films

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Boughaba ◽  
M. U. Islam ◽  
G. I. Sproule ◽  
M. J. Graham
Keyword(s):  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Large Area ◽  
Composition Structure ◽  
Krf Excimer Laser

ABSTRACTA large-area pulsed laser deposition (PLD) technique was used to uniformly grow tantalum pentoxide (Ta2O5) films on silicon wafers of 75 mm diameter. A KrF excimer laser beam was focused onto a 90 mm diameter Ta2O5 target to induce its ablation in oxygen gas ambient. The large-area coverage was obtained by rastering the laser beam over the radius of the rotating target, while the substrate was rotated simultaneously.The tantalum oxide films were characterized in terms of uniformity of thickness, composition, structure, and optical properties across the substrate. Average deviations typically below 1% were achieved in thickness, composition, indices of refraction and optical energy band-gap. Identical X-ray diffraction spectra were obtained at the center, middle of radius and edge of the wafers.

Pulsed Laser Deposition of Cluster-Assembled Thin Films with Controlled Nanostructure

2005 ◽  
Vol 901 ◽  
Author(s):  
Andrea Li Bassi ◽  
Carlo Spartaco Casari ◽  
Fabio Di Fonzo ◽  
Alessandro Bailini ◽  
Matteo Fusi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Specific Area ◽  
Laser Deposition ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Compact Structure ◽  
Background Gas

AbstractThin films synthesized by assembling clusters present interesting chemical and physical properties and a large specific surface, and are appealing for functional applications (e.g. sensing and catalysis). Also, clusters supported on surfaces are interesting both for nanocatalysis applications and for fundamental research. By means of pulsed laser deposition (PLD) in a background atmosphere we can induce cluster aggregation in the ablation plume and control the deposition kinetic energy of the clusters. These phenomena depend on the plume expansion dynamics and their influence on the properties of the deposited films has been investigated as a function of the background gas mass and pressure. The control of these parameters permits variation of the film surface morphology, from a compact structure with a very smooth surface, to a film with a controlled roughness at the nanoscale, to an open, low density meso- and nanostructure characterized by a high fraction of voids and by a large specific area. Thin films of WOx, TiOx, Pd/PdO, and Ag were deposited and characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman spectroscopy. Post-deposition annealing permits control of the crystalline degree of the films, which in the case of tungsten and titanium oxide is found to depend on the original nanostructure, while a different degree of oxidation can be induced by controlling the amount of oxygen in the deposition chamber. In-situ scanning tunneling microscopy (STM) was employed to study the first stages of growth of W films on different substrates. This opens the possibility to tailor the material properties through the control of the building nano-units.

scholarly journals High-temperature interface superconductivity in bilayer copper oxide films by pulsed laser deposition

2019 ◽  
Vol 63 (1) ◽  
pp. 128-135
Author(s):  
Jia-hao Den ◽  
Tian-shuang Ren ◽  
Le-le Ju ◽  
Hong-rui Zhang ◽  
Ji-rong Sun ◽  
...  
Keyword(s):  
High Temperature ◽  
Copper Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Interface Superconductivity
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