Pulsed Laser Deposition of Cluster-Assembled Thin Films with Controlled Nanostructure

2005 ◽  
Vol 901 ◽  
Author(s):  
Andrea Li Bassi ◽  
Carlo Spartaco Casari ◽  
Fabio Di Fonzo ◽  
Alessandro Bailini ◽  
Matteo Fusi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Specific Area ◽  
Laser Deposition ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Compact Structure ◽  
Background Gas

AbstractThin films synthesized by assembling clusters present interesting chemical and physical properties and a large specific surface, and are appealing for functional applications (e.g. sensing and catalysis). Also, clusters supported on surfaces are interesting both for nanocatalysis applications and for fundamental research. By means of pulsed laser deposition (PLD) in a background atmosphere we can induce cluster aggregation in the ablation plume and control the deposition kinetic energy of the clusters. These phenomena depend on the plume expansion dynamics and their influence on the properties of the deposited films has been investigated as a function of the background gas mass and pressure. The control of these parameters permits variation of the film surface morphology, from a compact structure with a very smooth surface, to a film with a controlled roughness at the nanoscale, to an open, low density meso- and nanostructure characterized by a high fraction of voids and by a large specific area. Thin films of WOx, TiOx, Pd/PdO, and Ag were deposited and characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman spectroscopy. Post-deposition annealing permits control of the crystalline degree of the films, which in the case of tungsten and titanium oxide is found to depend on the original nanostructure, while a different degree of oxidation can be induced by controlling the amount of oxygen in the deposition chamber. In-situ scanning tunneling microscopy (STM) was employed to study the first stages of growth of W films on different substrates. This opens the possibility to tailor the material properties through the control of the building nano-units.

scholarly journals Characterization of Uranium Particles Produced via Pulsed Laser Deposition

2003 ◽  
Vol 802 ◽  
Author(s):  
S. C. Glade ◽  
T. W. Trelenberg ◽  
J. G. Tobin ◽  
A. V. Hamza
Keyword(s):  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Scanning Tunneling Spectroscopy ◽  
Laser Deposition ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Gaseous Species ◽  
Experimental Apparatus

ABSTRACTWe have constructed an experimental apparatus for the synthesis (via pulsed laser deposition) and analysis of nanoparticles and thin films of plutonium and other actinides. In-situ analysis techniques include x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Also, the oxidation kinetics and the reaction kinetics of actinides with other gaseous species can be studied with this experimental apparatus. Preliminary results on depleted uranium are presented.

scholarly journals Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

2018 ◽  
Vol 9 ◽  
pp. 686-692 ◽  
Author(s):  
Daiki Katsube ◽  
Hayato Yamashita ◽  
Satoshi Abo ◽  
Masayuki Abe
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Metal Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Combined System ◽  
Force Microscopy ◽  
Atomic Force

We have designed and developed a combined system of pulsed laser deposition (PLD) and non-contact atomic force microscopy (NC-AFM) for observations of insulator metal oxide surfaces. With this system, the long-period iterations of sputtering and annealing used in conventional methods for preparing a metal oxide film surface are not required. The performance of the combined system is demonstrated for the preparation and high-resolution NC-AFM imaging of atomically flat thin films of anatase TiO2(001) and LaAlO3(100).

Advances in the Growth of SrS Thin Films by Pulsed Laser Deposition

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Piqué ◽  
R. C. Y. Auyeung ◽  
D. B. Chrisey ◽  
B. Justus ◽  
A. Huston ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Data Storage ◽  
Pulsed Laser ◽  
Optical Data Storage ◽  
Laser Deposition ◽  
Optical Data ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Background Gas

AbstractHigh quality luminescent thin films of strontium sulfide (SrS) doped with rare earths have been grown using Pulsed Laser Deposition (PLD). SrS films ranging in thicknesses from 0.05 to 2 µm. were deposited on MgO (001) and glass substrates. Deposition parameters such as growth temperature and H2S background gas pressure were varied and their effect on the structure, morphology and luminescence of the films was evaluated. The PLD grown films all showed texture and were highly oriented when deposited on MgO substrates as determined by their XRD spectra. Optical microscopy, SEM and AFM analysis were used to study the films' surface morphology. The thermally and optically stimulated luminescence properties of these films were evaluated as well. The data indicates that these materials may be useful for optical data storage applications.

Nanostructured Gold Thin Films Prepared by Pulsed Laser Deposition

2004 ◽  
Vol 19 (3) ◽  
pp. 950-958 ◽  
Author(s):  
Eric Irissou ◽  
Boris Le Drogoff ◽  
Mohammed Chaker ◽  
Michel Trudeau ◽  
Daniel Guay
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Crystallite Size ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanostructured Gold ◽  
The Mean ◽  
Gold Thin Films ◽  
Background Gas

A structural and morphological study of nanostructured gold thin films prepared by pulsed laser deposition in the presence of several inert background gases (Ar, He, and N2) and at various pressures (from 10 mTorr to 1 Torr) and target-to-substrate distances (from 1 to 10 cm) is presented. Structural and morphological analyses were undertaken using semiquantitative x-ray diffraction, scanning tunneling microscopy, and transmission electron microscopy. For each set of deposition conditions, the kinetic energy of the neutral gold species [Au(I)] present in the plasma plume was determined by time-of-flight emission spectroscopy and used to characterize the plasma dynamics. It is shown that all films exhibit a transition from highly [111] oriented to polycrystalline as the Au(I) kinetic energy decreases. The polycrystalline phase ratio is close to 0% for Au(I) kinetic energy larger than approximately 3.0 eV/atom and approximately 86 ± 10% for Au(I) kinetic energy smaller than approximately 0.30 eV/atom, irrespective of the background gas atmosphere. The mean crystallite size of both phases and the mean roughness of the films also follow a unique relation with the Au(I) kinetic energy, independently of the nature of the background gas, and nanocrystalline films with crystallite size as small as 12 nm are obtained for Au(I) kinetic energy smaller than 0.3 eV/atom.

scholarly journals Structural, Magnetic and Gas Sensing Activity of Pure and Cr Doped In2O3 Thin Films Grown by Pulsed Laser Deposition

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 588
Author(s):  
Kamatam Hari Prasad ◽  
Karuppiah Deva Arun Kumar ◽  
Paolo Mele ◽  
Arulanandam Jegatha Christy ◽  
Kugalur Venkidusamy Gunavathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gas Sensing ◽  
Magnetic Hysteresis ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray ◽  
In2o3 Film ◽  
Average Grain Size

Pure In2O3 and 6% Cr-doped In2O3 thin films were prepared on a silicon (Si) substrate by pulsed laser deposition technique. The obtained In2O3/In2O3:Cr thin films structural, morphological, optical, magnetic and gas sensing properties were briefly investigated. The X-ray diffraction results confirmed that the grown thin films are in single-phase cubic bixbyte structure with space group Ia-3. The SEM analysis showed the formation of agglomerated spherical shape morphology with the decreased average grain size for Cr doped In2O3thin film compared to pure In2O3film. It is observed that the Cr doped In2O3thin film shows the lower band gap energy and that the corresponding transmittance is around 80%. The X-ray photoelectron spectroscopy measurements revealed that the presence of oxygen vacancy in the doped In2O3film. These oxygen defects could play a significant role to enhance the sensing performance towards chemical species. In the magnetic hysteresis loop, it is clear that the prepared films confirm the ferromagnetic behaviour and the maximum saturation value of 39 emu/cc for Cr doped In2O3 film. NH3 gas sensing studies was also carried out at room temperature for both pure and Cr doped In2O3films, and the obtained higher sensitivity is 182% for Cr doped In2O3, which is about nine times higher than for the pure In2O3 film due to the presence of defects on the doped film surface.

Pulsed LASER Deposition of MgO Thin Films

2012 ◽  
Vol 545 ◽  
pp. 38-42 ◽  
Author(s):  
Norlida Kamarulzaman ◽  
Nurhanna Badar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Thin Film Surface ◽  
193 Nm ◽  
Chamber Gas

MgO thin films were deposited by Pulsed Laser deposition using different process parameter. The characteristics were investigated via X-Ray diffraction (XRD), Scanning Electron Microscope (SEM) and Digital Holographic Microscope (DHM). It is found that the thin film surface morphology and thickness are different. It was found that the different process parameters such as chamber gas pressure, substrate temperature, LASER energy and number of pulses greatly influence the characteristics of the thin films obtained. The thin films have very low thicknesses of 97, 187 and 193 nm.

A Study of Copper Oxide Films Fabricated by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
R. E. Leuchtner ◽  
L. S. Hristakos
Keyword(s):  
Copper Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Laser Fluences ◽  
Target Composition ◽  
Background Gas

AbstractCopper oxide films were grown using the pulsed laser deposition (PLD) method with either a copper metal or a copper oxide target. A variety of deposition pressures of oxygen (0.001–0.3 torr) and temperatures (350, 450, and 550°C) were explored. From x-ray diffraction analysis, epitaxial <100> CuO films were observed at 450°C and either at 0.01 or 0.1 torr for the CuO and the Cu targets, respectively. Deposition rates were measured for the two targets (Cu and CuO) as a function of laser fluence and background gas pressure and enabled a morphological study of films prepared at different laser fluences but of similar film thickness (∼0.3 μm). The number density of particulates as well as the smoothness of the underlying film surface of the CuO films varied significantly with the target composition. The CuO films from the Cu target were the smoothest and had the fewest particulates.

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