Characterization Of Thin Semiconductor Films For (Opto)Electronic Applications

1996 ◽  
Vol 430 ◽  
Author(s):  
J. R. Elmiger ◽  
H. Feist ◽  
M. Kunst

AbstractA simple set-up to measure the transient photoconductivity in the microwave frequency range is presented. The effective mobility is derived from the end of pulse transient photoconductivity. This can be used for the characterization of semiconductor films. Examples of measurements on a-Si:H films are given.

1990 ◽  
Vol 189 ◽  
Author(s):  
M. Kunst

ABSTRACTAfter a general survey of characterization techniques the use of transient photoconductivity measurements in the microwave frequency range for the characterization of semiconductors and semiconductor devices for (opto)electronic applications is treated. Experimental details and applications of these measurements are given.


1992 ◽  
Vol 269 ◽  
Author(s):  
C. Swiatkowski ◽  
A. Sanders ◽  
M. Kunst ◽  
G. Seidelmann ◽  
C. Haffer ◽  
...  

ABSTRACTThe application of transient photoconductivity measurements in the microwave frequency range to the characterization of semiconductors and semiconductor devices is analyzed. Quality control and in-situ optimization are discussed from a more general point of view and as a concrete example the optimization of the deposition of amorphous silicon films is presented.


2017 ◽  
Vol 07 (01) ◽  
pp. 1720001 ◽  
Author(s):  
Jinwu Chen ◽  
Chunchun Li ◽  
Dan Wang ◽  
Huaicheng Xiang ◽  
Liang Fang

Single phase Li2W2O7 with anorthic structure was prepared by the conventional solid-state reaction method at 550[Formula: see text]C and the anorthic structure was stable up to 660[Formula: see text]C. The dielectric properties at radio frequency (RF) and microwave frequency range were characterized. The sample sintered at 640[Formula: see text]C exhibited the optimum microwave dielectric properties with a relative permittivity of 12.2, a quality factor value of 17,700[Formula: see text]GHz (at 9.8[Formula: see text]GHz), and a temperature coefficient of the resonant frequency of [Formula: see text]232[Formula: see text]ppm/[Formula: see text]C as well as a high relative density [Formula: see text]94.1%. Chemical compatibility measurement indicated Li2W2O7 did not react with aluminum electrodes when sintered at 640[Formula: see text]C for 4[Formula: see text]h.


2017 ◽  
Vol 6 (2) ◽  
pp. 46
Author(s):  
S. Lalléchère

The aim of this proposal is to demonstrate the ability of tridimensional (3-D) electromagnetic modeling tool for the characterization of composite materials in microwave frequency band range. Indeed, an automated procedure is proposed to generate random materials, proceed to 3-D simulations, and compute shielding effectiveness (SE) statistics with finite integration technique. In this context, 3-D electromagnetic models rely on random locations of conductive inclusions; results are compared with classical electromagnetic mixing theory (EMT) approaches (e.g. Maxwell-Garnett formalism), and dynamic homogenization model (DHM). The article aims to demonstrate the interest of the proposed approach in various domains such as propagation and electromagnetic compatibility (EMC).


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