Structure and dielectric characterization of xNd(Mg1/2Ti1/2)O3–(1−x)Ca0.6La0.8/3TiO3 in the microwave frequency range

2011 ◽  
Vol 509 (21) ◽  
pp. 6285-6288 ◽  
Author(s):  
Yuan-Bin Chen
Keyword(s):  
Microwave Frequency ◽  
Frequency Range ◽  
Dielectric Characterization

scholarly journals Preparation, crystal structure, and dielectric characterization of Li2W2O7 ceramic at RF and microwave frequency range

2017 ◽  
Vol 07 (01) ◽  
pp. 1720001 ◽  
Author(s):  
Jinwu Chen ◽  
Chunchun Li ◽  
Dan Wang ◽  
Huaicheng Xiang ◽  
Liang Fang
Keyword(s):  
Dielectric Properties ◽  
Single Phase ◽  
Microwave Dielectric Properties ◽  
Microwave Frequency ◽  
Solid State Reaction Method ◽  
Frequency Range ◽  
Conventional Solid State Reaction ◽  
Dielectric Characterization ◽  
Microwave Dielectric

Single phase Li2W2O7 with anorthic structure was prepared by the conventional solid-state reaction method at 550[Formula: see text]C and the anorthic structure was stable up to 660[Formula: see text]C. The dielectric properties at radio frequency (RF) and microwave frequency range were characterized. The sample sintered at 640[Formula: see text]C exhibited the optimum microwave dielectric properties with a relative permittivity of 12.2, a quality factor value of 17,700[Formula: see text]GHz (at 9.8[Formula: see text]GHz), and a temperature coefficient of the resonant frequency of [Formula: see text]232[Formula: see text]ppm/[Formula: see text]C as well as a high relative density [Formula: see text]94.1%. Chemical compatibility measurement indicated Li2W2O7 did not react with aluminum electrodes when sintered at 640[Formula: see text]C for 4[Formula: see text]h.

Microwave Photoconductivity Measurements to Characterize Semiconductors

1990 ◽  
Vol 189 ◽  
Author(s):  
M. Kunst
Keyword(s):  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Frequency Range ◽  
General Survey ◽  
Characterization Techniques ◽  
Transient Photoconductivity

ABSTRACTAfter a general survey of characterization techniques the use of transient photoconductivity measurements in the microwave frequency range for the characterization of semiconductors and semiconductor devices for (opto)electronic applications is treated. Experimental details and applications of these measurements are given.

scholarly journals Development of a Microfluidic GHz Impedance Cytometer

2013 ◽  
Vol 80 (12) ◽  
Author(s):  
Niels Haandbæk ◽  
Sebastian C. Bürgel ◽  
Flavio Heer ◽  
Andreas Hierlemann
Keyword(s):  
Dielectric Properties ◽  
Chinese Hamster Ovary ◽  
Cho Cells ◽  
Single Cells ◽  
Chinese Hamster ◽  
Frequency Range ◽  
Cell Nuclei ◽  
Dielectric Characterization ◽  
The Difference

AbstractThis article presents a novel microfluidic impedance cytometer enabling dielectric characterization of single cells at frequencies up to 500 MHz. The dielectric properties of cells at lower frequencies contain information about their size and membrane capacitance. The increased frequency range of the presented cytometer potentially allows for characterization of intracellular components, such as vacuoles or the cell nuclei. We demonstrate the overall capabilities of the cytometer through discrimination of polystyrene beads from Chinese hamster ovary (CHO) cells. The discrimination is based on the difference in dielectric properties at frequencies up to 500 MHz.

Bulk and In-Circuit Dielectric Characterization of LTCC Tape Systems Through Millimeter Wave Frequency Range

2011 ◽  
Vol 2011 (1) ◽  
pp. 000740-000746 ◽  
Author(s):  
Bradley Thrasher ◽  
Deepukumar Nair ◽  
James Parisi ◽  
Glenn Oliver ◽  
Michael A. Smith
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Millimeter Wave ◽  
Design Stage ◽  
Frequency Range ◽  
Dielectric Thickness ◽  
Dielectric Characterization ◽  
Wide Range ◽  
Comprehensive Characterization

Low Temperature Co-fired Ceramic (LTCC) material systems offer a highly versatile microwave and millimeter wave packaging platform. Extremely low microwave loss, excellent control of dielectric constant, uniform dielectric thickness, non-existent water absorption leading to very high hermeticity, ability to support multilayer structure leading to 3-dimensional packaging, ability to embed passive functions within the tape layers, availability of a wide range of metallizations, etc. are some of the key advantages of LTCC for microwave packaging. One of the important parameters which needs to be determined at the very early stages of circuit designs are the dielectric properties - dielectric constant and loss tangent, both of which are functions of frequency. These properties need to be known accurately over the entire frequency range of operation for the circuit. For LTCC based designs, the use of dielectric constant of bulk material can lead to deviations between the performance expected at the design stage and for the fabricated circuit. Such deviations are a significant concern for broadband circuits as well as for circuits with sharp resonant behavior such as filters. One of the significant sources of deviation between bulk LTCC and “in-circuit” dielectric constant is the nature of the thick film metallizations used in LTCC technology. Work described here is a comprehensive characterization of three DuPont™ GreenTape™ LTCC systems 951, 943, and 9K7 - in the frequency range 10 to 70 GHz. Both bulk and “in-circuit” dielectric properties with silver and gold metallizations are studied to quantify the deviations in dielectric properties. A Fabry-Perot open resonator technique is used for the bulk characterization while printed ring resonators are used for the in-circuit characterization. This comprehensive characterization will provide key design data for LTCC designers in the 10 – 70 GHz frequency range.

Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz-1 MHz

2008 ◽  
Vol 5 (12) ◽  
pp. 3597-3600 ◽  
Author(s):  
M. Theodoropoulou ◽  
D. N. Pagonis ◽  
A. G. Nassiopoulou ◽  
C. A. Krontiras ◽  
S. N. Georga
Keyword(s):  
Silicon Films ◽  
Frequency Range ◽  
Dielectric Characterization

Characterization Of Thin Semiconductor Films For (Opto)Electronic Applications

1996 ◽  
Vol 430 ◽  
Author(s):  
J. R. Elmiger ◽  
H. Feist ◽  
M. Kunst
Keyword(s):  
Microwave Frequency ◽  
Semiconductor Films ◽  
Frequency Range ◽  
Transient Photoconductivity ◽  
Simple Set ◽  
Thin Semiconductor ◽  
Effective Mobility ◽  
Set Up

AbstractA simple set-up to measure the transient photoconductivity in the microwave frequency range is presented. The effective mobility is derived from the end of pulse transient photoconductivity. This can be used for the characterization of semiconductor films. Examples of measurements on a-Si:H films are given.

In-Situ Quality Control of the Production of Semiconductor Devices by Microwave Photoconductivity Measurements

1992 ◽  
Vol 269 ◽  
Author(s):  
C. Swiatkowski ◽  
A. Sanders ◽  
M. Kunst ◽  
G. Seidelmann ◽  
C. Haffer ◽  
...  
Keyword(s):  
Quality Control ◽  
Amorphous Silicon ◽  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Point Of View ◽  
General Point ◽  
Frequency Range ◽  
Transient Photoconductivity

ABSTRACTThe application of transient photoconductivity measurements in the microwave frequency range to the characterization of semiconductors and semiconductor devices is analyzed. Quality control and in-situ optimization are discussed from a more general point of view and as a concrete example the optimization of the deposition of amorphous silicon films is presented.

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