Microwave Photoconductivity Measurements to Characterize Semiconductors

1990 ◽  
Vol 189 ◽  
Author(s):  
M. Kunst
Keyword(s):  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Frequency Range ◽  
General Survey ◽  
Characterization Techniques ◽  
Transient Photoconductivity

ABSTRACTAfter a general survey of characterization techniques the use of transient photoconductivity measurements in the microwave frequency range for the characterization of semiconductors and semiconductor devices for (opto)electronic applications is treated. Experimental details and applications of these measurements are given.

In-Situ Quality Control of the Production of Semiconductor Devices by Microwave Photoconductivity Measurements

1992 ◽  
Vol 269 ◽  
Author(s):  
C. Swiatkowski ◽  
A. Sanders ◽  
M. Kunst ◽  
G. Seidelmann ◽  
C. Haffer ◽  
...  
Keyword(s):  
Quality Control ◽  
Amorphous Silicon ◽  
Semiconductor Devices ◽  
Microwave Frequency ◽  
Point Of View ◽  
General Point ◽  
Frequency Range ◽  
Transient Photoconductivity

ABSTRACTThe application of transient photoconductivity measurements in the microwave frequency range to the characterization of semiconductors and semiconductor devices is analyzed. Quality control and in-situ optimization are discussed from a more general point of view and as a concrete example the optimization of the deposition of amorphous silicon films is presented.

Characterization Of Thin Semiconductor Films For (Opto)Electronic Applications

1996 ◽  
Vol 430 ◽  
Author(s):  
J. R. Elmiger ◽  
H. Feist ◽  
M. Kunst
Keyword(s):  
Microwave Frequency ◽  
Semiconductor Films ◽  
Frequency Range ◽  
Transient Photoconductivity ◽  
Simple Set ◽  
Thin Semiconductor ◽  
Effective Mobility ◽  
Set Up

AbstractA simple set-up to measure the transient photoconductivity in the microwave frequency range is presented. The effective mobility is derived from the end of pulse transient photoconductivity. This can be used for the characterization of semiconductor films. Examples of measurements on a-Si:H films are given.

Microwave Characterization Techniques for High K Thin Films

2009 ◽  
Vol 421-422 ◽  
pp. 73-76
Author(s):  
K. Sudheendran ◽  
K.C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Transmission Lines ◽  
Coplanar Waveguide ◽  
Measurement Techniques ◽  
Microwave Dielectric Properties ◽  
Microwave Frequency ◽  
Characterization Techniques ◽  
Microwave Characterization

Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin films were characterized at different frequencies using a few techniques by involving coplanar waveguide (CPW) transmission lines circular patch capacitors and split post dielectric resonators. The first two are broadband measurement techniques while the third one is a spot frequency technique.

scholarly journals Preparation, crystal structure, and dielectric characterization of Li2W2O7 ceramic at RF and microwave frequency range

2017 ◽  
Vol 07 (01) ◽  
pp. 1720001 ◽  
Author(s):  
Jinwu Chen ◽  
Chunchun Li ◽  
Dan Wang ◽  
Huaicheng Xiang ◽  
Liang Fang
Keyword(s):  
Dielectric Properties ◽  
Single Phase ◽  
Microwave Dielectric Properties ◽  
Microwave Frequency ◽  
Solid State Reaction Method ◽  
Frequency Range ◽  
Conventional Solid State Reaction ◽  
Dielectric Characterization ◽  
Microwave Dielectric

Single phase Li2W2O7 with anorthic structure was prepared by the conventional solid-state reaction method at 550[Formula: see text]C and the anorthic structure was stable up to 660[Formula: see text]C. The dielectric properties at radio frequency (RF) and microwave frequency range were characterized. The sample sintered at 640[Formula: see text]C exhibited the optimum microwave dielectric properties with a relative permittivity of 12.2, a quality factor value of 17,700[Formula: see text]GHz (at 9.8[Formula: see text]GHz), and a temperature coefficient of the resonant frequency of [Formula: see text]232[Formula: see text]ppm/[Formula: see text]C as well as a high relative density [Formula: see text]94.1%. Chemical compatibility measurement indicated Li2W2O7 did not react with aluminum electrodes when sintered at 640[Formula: see text]C for 4[Formula: see text]h.

scholarly journals Optimized 3-D electromagnetic models of composite materials in microwave frequency range: application to EMC characterization of complex media by statistical means

2017 ◽  
Vol 6 (2) ◽  
pp. 46
Author(s):  
S. Lalléchère
Keyword(s):  
Composite Materials ◽  
Electromagnetic Compatibility ◽  
Microwave Frequency ◽  
Electromagnetic Modeling ◽  
Shielding Effectiveness ◽  
Frequency Range ◽  
Homogenization Model ◽  
Electromagnetic Models ◽  
Electromagnetic Mixing

The aim of this proposal is to demonstrate the ability of tridimensional (3-D) electromagnetic modeling tool for the characterization of composite materials in microwave frequency band range. Indeed, an automated procedure is proposed to generate random materials, proceed to 3-D simulations, and compute shielding effectiveness (SE) statistics with finite integration technique. In this context, 3-D electromagnetic models rely on random locations of conductive inclusions; results are compared with classical electromagnetic mixing theory (EMT) approaches (e.g. Maxwell-Garnett formalism), and dynamic homogenization model (DHM). The article aims to demonstrate the interest of the proposed approach in various domains such as propagation and electromagnetic compatibility (EMC).

dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

2013 ◽  
Author(s):  
Sweta Pendyala ◽  
Dave Albert ◽  
Katherine Hawkins ◽  
Michael Tenney
Keyword(s):  
Deep Submicron ◽  
Work Flow ◽  
Localization Technique ◽  
Characterization Techniques ◽  
Capacitance Voltage ◽  
Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

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