Ultra-high vacuum direct bonding of a p–n junction GaAs wafer using low-energy hydrogen ion beam surface cleaning

Vacuum ◽  
2007 ◽  
Vol 81 (8) ◽  
pp. 974-978 ◽  
Author(s):  
N. Razek ◽  
A. Schindler ◽  
B. Rauschenbach
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Surface Cleaning ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Hydrogen Ion ◽  
Gaas Wafer ◽  
Beam Surface

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

GaAs surface cleaning by low energy hydrogen ion beam treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1492-1497 ◽  
Author(s):  
N. Razek ◽  
K. Otte ◽  
T. Chassé ◽  
D. Hirsch ◽  
A. Schindler ◽  
...  
Keyword(s):  
Ion Beam ◽  
Surface Cleaning ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Gaas Surface ◽  
Ion Beam Treatment

Ultra high vacuum compatible metal ion beam surface modification system

1990 ◽  
Vol 61 (11) ◽  
pp. 3412-3415
Author(s):  
Yuzo Mori ◽  
Hui Wang ◽  
Katsuyoshi Endo ◽  
Kazuto Yamauchi ◽  
Takashi Ide ◽  
...  
Keyword(s):  
Surface Modification ◽  
Metal Ion ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Modification System ◽  
Beam Surface

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

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