Design of a Compact Negative Metal Ion Beam Source for Surface Studies

1995 ◽  
Vol 396 ◽  
Author(s):  
Y. Park ◽  
Y.W. Ko ◽  
M.H. Sohn ◽  
S.I. Kim
Keyword(s):  
Solid State ◽  
Metal Ion ◽  
Beam Energy ◽  
Ion Beam ◽  
High Vacuum ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Beam Diameter ◽  
Beam Source

AbstractA compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION's Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Ultra high vacuum compatible metal ion beam surface modification system

1990 ◽  
Vol 61 (11) ◽  
pp. 3412-3415
Author(s):  
Yuzo Mori ◽  
Hui Wang ◽  
Katsuyoshi Endo ◽  
Kazuto Yamauchi ◽  
Takashi Ide ◽  
...  
Keyword(s):  
Surface Modification ◽  
Metal Ion ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Modification System ◽  
Beam Surface

scholarly journals Formation of High Purity Films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method

2000 ◽  
Vol 41 (1) ◽  
pp. 31-33
Author(s):  
Akiyoshi Chayahara ◽  
Atsushi Kinomura ◽  
Nobuteru Tsubouchi ◽  
Claire Heck ◽  
Yuji Horino
Keyword(s):  
High Purity ◽  
Ion Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

FIB/SEM Dual Beam Instrumentation: Slicing, Dicing, Imaging, and More

2001 ◽  
Vol 7 (S2) ◽  
pp. 796-797
Author(s):  
Lucille A. Giannuzzi
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Time Frame ◽  
Ion Source ◽  
Beam Diameter ◽  
Dual Beam ◽  
Beam Currents

In a focused ion beam (FIB) instrument, ions (typically Ga+) obtained from a liquid metal ion source are accelerated down a column at energies up to ∽ 50 keV. The beam of ions is focused by electrostatic and octopole lens systems and the ion dose (and beam diameter) is controlled using real and/or virtual apertures. Beam sizes in FIB instruments on the order of 5-7 nm may be achieved.The versatility of the FIB instrument enables large regions of material (e.g., 500 μm3) to be removed at high beam currents in just a couple of minutes. Lower beam currents (i.e., beam diameters) are usually used to remove smaller amounts of material within the same time frame (e.g., ∽ 5μm3). The introduction of an organometallic gas in close proximity to the target allows for the deposition of metals, SiO2, and other materials, by an ion beam assisted chemical vapor deposition process.

A Novel Rectilinear Negative Carbon Ion Beam Source for Large-Area Amorphous Diamond Like Carbon Coatings

1995 ◽  
Vol 396 ◽  
Author(s):  
M.H. Sohn ◽  
YO. Ahn ◽  
Y.W. Ko ◽  
Y. Park ◽  
S.I. Kim
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ion Beams ◽  
Ion Source ◽  
Hydrogen Gas ◽  
Diamond Like Carbon ◽  
Large Area ◽  
Beam Source ◽  
Carbon Ion ◽  
Carbon Ion Beam

AbstractA novel rectilinear negative carbon ion beam source for large-area coatings has been developed, based on SKION's Solid State Ion Beam Technology. The negative carbon ion beam is effectively produced by a primary cesium ion bombardment and the secondary negative carbon ion yield has been observed to be about 0.5. The ion source produces a negative carbon ion current density of 0.25 mA/cm2 at the extraction voltage of 4 kV. The ion beam energy can be independently controlled from 0 eV to 300 eV. Due to the rectilinear geometry for the production of ion beams, the scale-up of the ion beam in length direction can be easily obtained with no limit. Furthermore, the ion source uses no gas discharge to generate ion beams and does not use any hydrogen gas. The ion source can be operated in a high vacuum (<10-7 Torr), and the cesium vapors are filtered and recirculated. The ion source produces ultra-hard (50 GPa), atomically smooth (< 1 nm Ra), and hydrogen-free amorphous diamond-like-carbon (DLC) films over large areas.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Characteristics of extracted ion beam from a cesium-free negative ion source using sheet plasma

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Sheet Plasma

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

High-current negative-ion beam acceleration with a large negative-ion source for large helical device-neutral beam injection system

1998 ◽  
Vol 69 (2) ◽  
pp. 977-979 ◽  
Author(s):  
Y. Takeiri ◽  
M. Osakabe ◽  
K. Tsumori ◽  
Y. Oka ◽  
O. Kaneko ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Neutral Beam Injection ◽  
Negative Ion ◽  
Neutral Beam ◽  
Injection System ◽  
High Current ◽  
Beam Injection
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