scholarly journals Ion Energy Dependence of N/C Ratio in Low Energy CN Molecular Negative-ion Beam Deposited Films.

Shinku ◽  
1999 ◽  
Vol 42 (3) ◽  
pp. 229-232
Author(s):  
Takaaki YOSHIHARA ◽  
Hiroshi TSUJI ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Low Energy ◽  
Negative Ion ◽  
Ion Energy ◽  
Deposited Films

Ion Energy Dependence of Inter-atomic Bonding State of Carbon Films Deposited by Low-Energy Carbon-Negative Ion Beam.

Shinku ◽  
1999 ◽  
Vol 42 (3) ◽  
pp. 221-224 ◽  
Author(s):  
Hiroshi TSUJI ◽  
Syuichi NAKAMURA ◽  
Takaaki YOSHIHARA ◽  
Yasuhito GOTOH ◽  
Junzo ISHIKAWA
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Carbon Films ◽  
Low Energy ◽  
Negative Ion ◽  
Ion Energy ◽  
Bonding State

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited films

1999 ◽  
Vol 343-344 ◽  
pp. 17-20 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Shuichi Nakamura ◽  
Yasuhito Gotoh ◽  
Junzo Ishikawa
Keyword(s):  
Ion Beam ◽  
Negative Ion ◽  
Ion Energy ◽  
Deposited Films

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

scholarly journals Sputtering of silicon nanopowders by an argon cluster ion beam

2019 ◽  
Vol 10 ◽  
pp. 135-143 ◽  
Author(s):  
Xiaomei Zeng ◽  
Vasiliy Pelenovich ◽  
Zhenguo Wang ◽  
Wenbin Zuo ◽  
Sergey Belykh ◽  
...  
Keyword(s):  
Energy Dependence ◽  
Ion Beam ◽  
Finite Size ◽  
Low Energy ◽  
Finite Size Effect ◽  
Target Density ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Beam Parameters ◽  
Silicon Nanopowders

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.

Fabrication of Epitaxial Silicides thin films by Combining Low-Energy Ion Beam Deposition and Silicon Molecular Beam Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Shibatal ◽  
Y. Makital ◽  
H. Katsumata ◽  
S. Kimura ◽  
N. Kobayashil ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Knudsen Cell ◽  
Ion Beam Deposition ◽  
Deposited Films ◽  
Beam Deposition

AbstractWe have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Sil., Cx alloy thin films on Si using low-energy ( 100 – 300 eV ) C+ ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing IC, which suggests that the selective sputtering for deposited C atoms by incident C+ ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing IC.

Surface and Bulk Microstructural Modifications in Amorphous Carbon Films after Post-Growth Low Energy Ion Beam Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
P. Patsalas ◽  
S. Logothetidis
Keyword(s):  
Amorphous Carbon ◽  
Amorphous Matrix ◽  
Ion Beam ◽  
Carbon Films ◽  
Low Energy ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Ion Energy ◽  
X Ray

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.

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