Mound Formation and Coarsening in Homoepitaxial Growth

MRS Proceedings ◽

10.1557/proc-440-229 ◽

1996 ◽

Vol 440 ◽

Author(s):

Jacques G. Amar ◽

Fereydoon Family

Keyword(s):

Critical Temperature ◽

Kinetic Monte Carlo ◽

Layer Growth ◽

Layer By Layer ◽

Island Nucleation ◽

Homoepitaxial Growth ◽

Kinetic Monte Carlo Simulations ◽

Temperature Deposition ◽

Mound Formation ◽

Positive Step

AbstractThe effects of instabilities which lead to mound formation and coarsening in homoepitaxial growth on metal (100) surfaces are discussed. These include an instability due to the Ehrlich-Schwoebel step barrier to interlayer diffusion as well as an instability due to step-adatom attraction at ascending steps. A unified picture of the effects of attractive and repulsive interactions at ascending and descending steps on surface morphology and island nucleation is presented. An analytic calculation of the selected mound angle and critical temperature for mound formation as a function of both the Ehrlich-Schwoebel step barrier and the barrier to diffusion towards an ascending step is also presented. Depending on the sign of the step barrier and the magnitude of the prefactor for diffusion over a step various scenarios are possible, including the existence of a critical temperature for mound formation above which (for a positive step barrier) or below which (for a negative step barrier) quasi-layer-by-layer growth will be observed. A theoretical analysis also leads to an accurate prediction of the observed mound angle for Fe/Fe(100) deposition at room temperature. The general dependence of the mound angle, surface skewness, and mound coarsening exponent on temperature, deposition rate, and strength of the step barrier is also studied via kinetic Monte Carlo simulations of bcc(100) growth and compared with recent experiments.

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Mound Formation, Coarsening and Instabilities in Epitaxial Growth

Surface Review and Letters ◽

10.1142/s0218625x98001225 ◽

1998 ◽

Vol 05 (03n04) ◽

pp. 851-864 ◽

Cited By ~ 6

Author(s):

Jacques G. Amar ◽

Fereydoon Family

Keyword(s):

Epitaxial Growth ◽

Kinetic Monte Carlo ◽

Realistic Model ◽

Island Nucleation ◽

Homoepitaxial Growth ◽

Coarsening Behavior ◽

Kinetic Monte Carlo Simulations ◽

Temperature Deposition ◽

Mound Formation ◽

Kinetics Of

An introductory review of the central ideas in the kinetics of multilayer epitaxial growth is presented. A realistic model for multilayer homoepitaxial growth on fcc(100) and bcc(100) surfaces which takes into account the correct crystal structure is discussed. The effects of instabilities which lead to mound formation and coarsening are discussed, and a unified picture of the effects of attractive and repulsive interactions at ascending and descending steps on surface morphology and island nucleation is presented. An accurate prediction of the observed mound angle for Fe/Fe(100) deposition is obtained analytically and by kinetic Monte Carlo simulations. The general dependence of the mound angle and mound coarsening behavior on the temperature, deposition rate and strength of the step barrier in bcc(100) and fcc(100) growth is also presented, and compared with recent experiments.

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Scaling and Coarsening in Epitaxial Growth

MRS Proceedings ◽

10.1557/proc-528-93 ◽

1998 ◽

Vol 528 ◽

Cited By ~ 1

Author(s):

Fereydoon Family ◽

Jacques G. Amar

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Deposition Rate ◽

Kinetic Monte Carlo ◽

Realistic Model ◽

Island Size ◽

Island Nucleation ◽

Homoepitaxial Growth ◽

Coarsening Behavior ◽

Kinetic Monte Carlo Simulations

AbstractThe results of recent theoretical and simulational studies of submonolayer and multilayer homoepitaxial growth are discussed. In the submonolayer regime, the results of kinetic Monte Carlo simulations are presented and shown to provide a quantitative explanation for the variation of the submonolayer island density, critical island size, island-size distribution and morphology as a function of temperature and deposition rate found in recent experiments. In multilayer growth, a realistic model for homoepitaxial growth on fcc and bcc lattices which takes into account the correct crystal structure is reviewed. The effects of instabilities which lead to mound formation and coarsening are discussed and a unified picture of the effects of attractive and repulsive interactions at ascending and descending steps on surface morphology and island nucleation is presented. An accurate prediction of the observed mound angle for Fe/Fe(100) deposition is obtained analytically and by kinetic Monte Carlo simulations. The general dependence of the mound angle, and mound coarsening behavior on temperature, deposition rate, and strength of the step barrier in bcc(100) and fcc(100) growth is also presented and compared with recent experiments.

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Step-Edge Barriers on GaAs(001)

MRS Proceedings ◽

10.1557/proc-399-229 ◽

1995 ◽

Vol 399 ◽

Author(s):

P. Šmilauer ◽

D.D. Vvedensky

Keyword(s):

Kinetic Monte Carlo ◽

Step Edge ◽

Layer By Layer ◽

Vicinal Surfaces ◽

Activation Barriers ◽

Long Time ◽

Kinetic Monte Carlo Simulations ◽

Simulated Surface ◽

Constant Slope ◽

Surface Morphologies

ABSTRACTWe investigate growth of GaAs(001) using kinetic Monte Carlo simulations of a very simple atomistic solid-on-solid model. The key features of this model are a short-range incorporation process of freshly deposited atoms and additional activation barriers to interlayer transport. Both are required to obtain close agreement between measured electron-diffraction intensities and simulated surface step densities during growth and post-growth equilibration on vicinal surfaces. This model is used to study long-time evolution of the surface morphology. Large pyramid-like features develop during growth on a singular surface which coarsen in time while maintaining an approximately constant slope. Growth on a vicinal surface is also found to be unstable. Simulated surface morphologies are compared with recent work using atomic-force microscopy. Finally, we show how a suitably modified version of this model helps to explain the recently observed phenomenon of re-entrant layer-by-layer chemical-beam etching of a singular GaAs(001) surface. The central features responsible for this behavior are the site selectivity of the etching process combined with step-edge barriers to interlayer adatom migration.

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Bismuth-Induced Layer-by-Layer Growth in the Homoepitaxial Growth of Fe(100)

MRS Proceedings ◽

10.1557/proc-749-w4.5 ◽

2002 ◽

Vol 749 ◽

Author(s):

Masao Kamiko ◽

Hiroaki Chihaya ◽

Hiroyuki Mizuno ◽

Junhua Xu ◽

Isao Kojima ◽

...

Keyword(s):

Electron Diffraction ◽

Surface Segregation ◽

High Energy ◽

Layer Growth ◽

Growth Behavior ◽

Layer By Layer ◽

High Energy Electron ◽

Optimum Amount ◽

Homoepitaxial Growth ◽

Strong Surface

ABSTRACTWe have investigated the effect of Bi on the homoepitaxial growth of Fe(100) by means of reflection high-energy electron diffraction (RHEED). It was clearly found that Bi induces layer-by-layer growth of Fe on Fe(100)-c(2×2)O reconstruction surface. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is optimum amount of Bi surfactant layer that induces the smoother layer-by-layer growth. A strong surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.

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Logarithmic Factors, Critical Temperature, and Zero Temperature Flipping in the 4D Kinetic Ising Model

International Journal of Modern Physics C ◽

10.1142/s0129183197000230 ◽

1997 ◽

Vol 08 (02) ◽

pp. 263-267 ◽

Cited By ~ 17

Author(s):

Dietrich Stauffer ◽

Joan Adler

Keyword(s):

Critical Temperature ◽

Ising Model ◽

Nearest Neighbor ◽

Kinetic Monte Carlo ◽

Series Expansions ◽

Fourth Moment ◽

Zero Temperature ◽

Kinetic Ising Model ◽

Kinetic Monte Carlo Simulations ◽

Error Bars

We determine the critical temperature in the four-dimensional nearest-neighbor Ising model as J/kB Tc=0.149694±0.000002 from kinetic Monte Carlo simulations of up to 5764 spins. Here we assume the critical magnetization to decay with time as (t/ log t)-1/2. However, possible logarithmic additions to this leading scaling behavior could change the estimate beyond these error bars. A reanalyzis of old series expansions for the susceptibility and fourth moment gives 0.149696±0.000004.

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Crossover Scaling in Thick Film Growth on Vicinal Surfaces

International Journal of Modern Physics B ◽

10.1142/s0217979297001842 ◽

1997 ◽

Vol 11 (31) ◽

pp. 3647-3655 ◽

Cited By ~ 6

Author(s):

Alberto Pimpinelli ◽

Philippe Peyla

Keyword(s):

Thick Film ◽

Particle Deposition ◽

Film Growth ◽

Kinetic Monte Carlo ◽

Layer Growth ◽

Film Deposition ◽

Rate Equations ◽

Layer By Layer ◽

Step Flow ◽

Step Step

Crystal growth by particle deposition on a vicinal surface is studied by kinetic Monte Carlo simulations as a model for molecular beam epitaxy. In particular, the crossover between step flow and layer-by-layer growth during thick film deposition is investigated as a function of the atom deposition rate F, temperature and step-step distance d. The crossover scaling function for the island density is derived analytically by coupling rate equations to the Burton, Cabrera and Frank theory for step flow.

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Bi induced layer-by-layer growth in the homoepitaxial growth of Fe on Fe (100)-c(2×2)O reconstruction surface

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.11.095 ◽

2004 ◽

Vol 263 (1-4) ◽

pp. 363-371 ◽

Cited By ~ 8

Author(s):

M. Kamiko ◽

H. Mizuno ◽

J.-H. Xu ◽

I. Kojima ◽

R. Yamamoto

Keyword(s):

Layer Growth ◽

Layer By Layer ◽

Homoepitaxial Growth

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Kinetic Monte Carlo (KMC) Simulation of GaAs (001) β2 (2x4) Reconstructed Surface and Characterization

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.297-301.308 ◽

2010 ◽

Vol 297-301 ◽

pp. 308-317 ◽

Cited By ~ 1

Author(s):

Hamid Khachab ◽

Yamani Abdelkafi ◽

Abderrahmane Belghachi

Keyword(s):

Monte Carlo ◽

Kinetic Monte Carlo ◽

Morphological Evolution ◽

High Energy ◽

Zinc Blend ◽

Homoepitaxial Growth ◽

Initial Stage ◽

Kinetic Monte Carlo Simulations ◽

Reconstructed Surface

Several methods have been introduced to study and simulate homoepitaxial growth of III-V materials. GaAs (001) surface has widely been used in the last three decades due both to its importance as substrate and for characterization of epitaxial growth. In this paper, we firstly study the initial stage of homoepitaxial growth on a GaAs (001) β2(2x4) reconstructed surface using As2 . The simulation was carried out with Kinetic Monte Carlo simulations including the zinc blend structure β2 (2x4) reconstruction of GaAs surface. Then we discus results of the homoepitaxy GaAs on GaAs particularly morphological evolution of the two dimensional islands and observations were made in real-time at the growth temperature using reﬂection high energy electron diffraction (RHEED) and roughness morphology.

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Pb Induced Layer-by-Layer Growth and the Dependence on an Amount of Surfactant in the Growth of Ni on Ni(100) Surface

MRS Proceedings ◽

10.1557/proc-441-145 ◽

1996 ◽

Vol 441 ◽

Cited By ~ 1

Author(s):

M. Iwanami ◽

M. Kamiko ◽

T. Matsumoto ◽

R. Yamamoto

Keyword(s):

Film Growth ◽

Three Dimensional ◽

High Energy ◽

Layer Growth ◽

Embedded Atom Method ◽

Layer By Layer ◽

Homoepitaxial Growth ◽

Embedded Atom ◽

Series Of Experiments ◽

Modified Embedded Atom Method

AbstractSurfactant epitaxy has been expected to be a powerful method to improve thin film growth from three dimensional island mode to layer-by-layer growth one. Supposing that Pb is the surfactant and Ni is the substrate and deposition metal, we have investigated how the surfactant atoms segregate on surface by computer simulations using the modified embedded atom method. To verify the effect of Pb on the homoepitaxial growth of Ni, we have performed a series of experiments on the growth of Ni on Ni(100) surface with and without Pb using reflection high energy electron diffraction (RHEED). It was clearly found that Pb induced layer-by-layer growth of Ni metal film. The result of the dependence of the growth behavior on the thickness of Pb layer suggests that there is the most suitable thickness of a surfactant layer which is not always the monolayer.

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