Low-Temperature Metalorganic Chemical Vapor Deposition of Gallium Nitride on (0001) Sapphire Substrates Using a Remote rf Nitrogen Plasma

ABSTRACTWe report the low-temperature growth of GaN layers on (0001) sapphire substrates by a remote plasma enhanced metal-organic chemical vapor deposition in the temperature range of 500 - 800 $C. Effects of process parameters on the growth of GaN were studied. The structural quality of GaN improved as the growth temperature increased and the rf power decreased. Highly oriented GaN layers could be deposited at fairly low temperatures such as 500 $C under low rf power with low growth rate conditions.