Processing Of PbTi03 And Pb(ZrxTi1−x)03 Thin Films By Novel Single-Solid-Source Metalorganic Chemical Vapor Deposition

ABSTRACTFerroelectric PbTiO3(FT) and Pb(ZrxTi1−x)03 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited FT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.

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In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-335-285 ◽

1993 ◽

Vol 335 ◽

Author(s):

Frank Dimeo ◽

Bruce W. Wessels ◽

Deborah A. Neumayer ◽

Tobin J. Marks ◽

Jon L. Schindler ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Oxide Phase ◽

Growth Conditions ◽

X Ray Diffraction ◽

Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

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Electrical and microstructural properties of BaTiO3 thin films on p-Si substrates grown by metalorganic chemical vapor deposition

Solid State Communications ◽

10.1016/0038-1098(93)90140-i ◽

1993 ◽

Vol 86 (9) ◽

pp. 565-568 ◽

Cited By ~ 9

Author(s):

T.W. Kim ◽

M. Jung ◽

Y.S. Yoon ◽

W.N. Kang ◽

H.S. Shin ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Microstructural Properties ◽

Si Substrates ◽

Metalorganic Chemical

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c-Axis oriented (Na,K)NbO3 thin films on Si substrates using metalorganic chemical vapor deposition

Materials Letters ◽

10.1016/s0167-577x(02)00872-8 ◽

2002 ◽

Vol 57 (4) ◽

pp. 781-786 ◽

Cited By ~ 33

Author(s):

Choong-Rae Cho

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrates ◽

Metalorganic Chemical

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Microstructure and Chemistry of Nonstoichiometric (Ba,Sr)TiO3 Thin Films Deposited by Metalorganic Chemical Vapor Deposition

Journal of Materials Research ◽

10.1557/jmr.2000.0207 ◽

2000 ◽

Vol 15 (7) ◽

pp. 1433-1436 ◽

Cited By ~ 13

Author(s):

Igor Levin ◽

Richard D. Leapman ◽

Debra L. Kaiser

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Grain Boundaries ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Significant Drop ◽

Si Substrates ◽

Ti Content ◽

Metalorganic Chemical

The microstructure and chemistry of (Ba,Sr)TiO3 thin films deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition were studied using highresolution transmission electron microscopy and quantitative spectrum imaging in electron energy loss spectroscopy. The grain boundaries in all films with overall Ti content ranging from 50.7% to 53.4% exhibit a significant increase in Ti/Ba ratio as compared to the grain interiors. The results suggest that the deviations of Ti/(Ba + Sr) ratio from the stoichiometric value of unity are accommodated by the creation of Ba/Sr vacancies, which segregate to the grain boundary regions. The films with Ti contents equal to or greater than 52% additionally contained an amorphous Ti-rich phase at some grain boundaries and multiple grain junctions; the amount of this phase increases with increasing overall Ti content. The analysis indicates that the amorphous phase can only partially account for the significant drop in dielectric permittivity accompanying increases in the Ti/(Ba + Sr) ratio.

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