In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Phase ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

Processing Of PbTi03 And Pb(ZrxTi1−x)03 Thin Films By Novel Single-Solid-Source Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 474 ◽  
Author(s):  
Ping Lu ◽  
Hang Li ◽  
Shan Sun ◽  
Brace Tuttle
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Si Substrates ◽  
Process Reliability ◽  
Precursor Powders ◽  
Metalorganic Chemical

ABSTRACTFerroelectric PbTiO3(FT) and Pb(ZrxTi1−x)03 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited FT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.

In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa 2Cu 3Ox Thin Films by Spectroscopic Ellipsometry

1999 ◽  
Vol 38 (Part 2, No. 6A/B) ◽  
pp. L632-L635 ◽  
Author(s):  
Shuu'ichirou Yamamoto ◽  
Satoshi Sugai ◽  
Yasunari Matsukawa ◽  
Akio Sengoku ◽  
Hiroshi Tobisaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Spectroscopic Ellipsometry ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Monitoring ◽  
In Situ Growth ◽  
Metalorganic Chemical

Structural and Optical Analysis of GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 517 ◽  
pp. 5-8
Author(s):  
F.K. Yam ◽  
Hassan Zainuriah ◽  
Abu Hassan Haslan ◽  
M.E. Kordesch
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Phonon Mode ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

This paper presents an analysis of the characteristics of two gallium nitride (GaN) films grown on (0001) plane sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD) is presented. The GaN films were characterized by a variety of methods, including scanning electron microscopy (SEM), x-ray diffraction (XRD), photoluminescence (PL), and Raman scattering. SEM micrographs revealed that different growth conditions will lead to different surface morphology of the films. XRD measurements indicated that both films were highly oriented and mono crystalline. PL spectra for both samples exhibited an intense and sharp band edge peak at 3.42 eV with full width at half maximum (FWHM) of 15 and 35 meV respectively. Raman scattering showed that the peaks of E2(high) phonon mode were observed at 568.1 and 570.1 cm-1 respectively. The different growth mode of these films were linked to the growth conditions, in which the growth mechanism could be correlated with the shift of E2(high) phonon mode in Raman scattering.

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