scholarly journals In-Situ Monitoring Of Etch By-Products During Reactive Ion Beam Etching Of Gaas In Chlorine/Argon

1997 ◽  
Vol 483 ◽  
Author(s):  
J. W. Lee ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
G. A. Vawter ◽  
R. J. Shul ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Ion Beam ◽  
Beam Current ◽  
In Situ Monitoring ◽  
Ion Beam Etching ◽  
Inductively Coupled ◽  
Ar Gas ◽  
Product Species ◽  
Reactive Ion Beam Etching

AbstractMass spectrometry of the plasma effluent during Reactive Ion Beam Etching (RIBE) of GaAs using an Inductively Coupled Plasma (ICP) source and a Cl2/Ar gas chemistry shows that AsCl3, AsCl2 and AsCl are all detected as etch products for As, while GaCl2 is the main signal detected for the Ga products. The variation in selective ion currents for the various etch products has been examined as a function of chuck temperature (30–100°C), percentage Cl2 in the gas flow, beam current (60–180 mA) and beam voltage (200–800 V). The results are consistent with AsCl3 and GaCl3 being the main etch product species under our conditions, with fragmentation being responsible for the observed mass spectra.

scholarly journals In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon

1997 ◽  
Author(s):  
J.W. Lee ◽  
S.J. Pearton ◽  
C.R. Abernathy ◽  
G.A. Vawter ◽  
R.J. Shul ◽  
...  
Keyword(s):  
Ion Beam ◽  
In Situ Monitoring ◽  
Ion Beam Etching ◽  
By Products ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 38-43 ◽  
Author(s):  
J. W. Lee ◽  
R. J. Shul ◽  
G. A. Vawter ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Ion Beam ◽  
Compound Semiconductors ◽  
Ion Beam Etching ◽  
Inductively Coupled ◽  
Ar Plasma ◽  
Reactive Ion Beam Etching

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

Reactive Ion Beam Etching Using a Selective Gallium Doping Method

1989 ◽  
Vol 28 (Part 2, No. 9) ◽  
pp. L1671-L1672
Author(s):  
Kyusaku Nishioka ◽  
Hiroaki Morimoto ◽  
Yoji Mashiko ◽  
Tadao Kato
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
Gallium Doping ◽  
Reactive Ion Beam Etching
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