Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes

1997 ◽  
Vol 487 ◽  
Author(s):  
A Castaldini ◽  
A Cavallini ◽  
L Polenta ◽  
C Canali ◽  
F Nava ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Energy ◽  
Deep Levels ◽  
Induced Current ◽  
High Fluence ◽  
High Fluences ◽  
Electron Beam Induced Current ◽  
Insulating Liquid ◽  
Undoped Gaas ◽  
Scanning Electron

AbstractSemi-insulating liquid encapsulated Czochralski grown GaAs has been investigated after irradiation at high fluences of high-energy protons. Electron beam induced current observations of scanning electron microscopy evidenced a radiation stimulated ordering. An analysis has been carried out of the deep levels associated with defects as a function of the irradiation fluence, using complementary current transient spectroscopies. By increasing the irradiation fluence, the concentration of the native traps at 0.37 eV together with that of the EL2 defect significantly increases and, at the same time, two new electron traps at 0.15 eV and 0.18 eV arise and quickly increase in density.

scholarly journals Kesterites and Chalcopyrites: A Comparison of Close Cousins

2011 ◽  
Vol 1324 ◽  
Author(s):  
Ingrid Repins ◽  
Nirav Vora ◽  
Carolyn Beall ◽  
Su-Huai Wei ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Density Functional ◽  
Materials Characterization ◽  
Induced Current ◽  
X Ray Diffraction ◽  
Functional Theory ◽  
X Ray ◽  
Electron Beam Induced Current ◽  
Similarities And Differences ◽  
Secondary Ion ◽  
Scanning Electron

ABSTRACTChalcopyrite solar cells based on CuInSe2 and associated alloys have demonstrated high efficiencies, with current annual shipments in the hundreds of megawatts (MW) range and increasing. Largely due to concern over possible indium (In) scarcity, a related set of materials, the kesterites, which comprise Cu2ZnSnS4 and associated alloys, has received increasing attention. Similarities and differences between kesterites and chalcopyrites are discussed as drawn from theory, depositions, and materials characterization. In particular, we discuss predictions from density functional theory, results from vacuum co-evaporation, and characterization via x-ray diffraction, scanning electron microscopy, electron beam-induced current, quantum efficiency, secondary ion mass spectroscopy, and luminescence.

Sem-Ebic Characterization of Semiconducting and Semi-Insulating LEC-GaAs

1986 ◽  
Vol 69 ◽  
Author(s):  
Yozo Tokumaru ◽  
Yasumasa Okada
Keyword(s):  
Reverse Bias ◽  
Current Method ◽  
Experimental Result ◽  
Reverse Bias Voltage ◽  
Induced Current ◽  
Cell Structures ◽  
Lec Gaas ◽  
Electron Beam Induced Current ◽  
Insulating Liquid

AbstractWe have applied the SEM-EBIC technique (electron-beam-induced current method using a scanning electron microscope) to the characterization of both semiconducting and semi-insulating liquid encapsulated Czocralski (LEC) grown GaAs and have found this technique to be effective for semiinsulating materials as well as semiconducting ones. In semiconducting Si-, In- and undoped LEC-GaAs, growth striations were observed under usual measurement conditions. In semi-insulating undoped LEC-GaAs, clear EBIC images of individual dislocations and cell structures of dislocations were obtained by applying a high reverse bias voltage of about 10∼100 V to the specimens. We have also investigated nearly dislocation-free semiinsulating In-doped LEC-GaAs and found inhomogeneities which are different from those observed in undoped specimens. The spatial resolution of this technique is estimated to be 2–3 μm, which agrees with the experimental result

The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

1991 ◽  
Vol 224 ◽  
Author(s):  
Tian-Qun Zhou ◽  
Andrzej Buczkowski ◽  
Zbigniew Radzimski ◽  
George A. Rozgonyi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electrical Activity ◽  
Misfit Dislocations ◽  
Induced Current ◽  
Near Surface ◽  
Transmission Electron ◽  
Electron Beam Induced Current ◽  
Metallic Impurities ◽  
Scanning Electron

AbstractA study of gettering and electrical activity of metallic impurities Ni, Au and Cu has been carried out on epitaxial Si/Si(2%Ge)/Si wafers containing interfacial misfit dislocations. The impurities were intentionally introduced from a backside deposited thin metal followed by rapid thermal annealing (RTA). Transmission Electron Microscopy (TEM) results indicate that the impurities were gettered along the misfit dislocations in near-surface regions either as Au precipitate colonies, or as NiSi2 and CuSi silicide precipitates. Data from Scanning Electron Microscopy (SEM) in the Electron Beam Induced Current (EBIC) mode revealed that these precipitates dominate the recombination properties of the initially inactive misfit dislocation.

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