Thermal Behaviour of Implanted Nitrogen and Accumulated Hydrogen in Titanium

1997 ◽  
Vol 504 ◽  
Author(s):  
M. Soltani-Farshi ◽  
H. Baumann ◽  
D. Rück ◽  
G. Walter ◽  
K. Bethge
Keyword(s):  
Ion Implantation ◽  
Depth Distribution ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Depth Profiles ◽  
Hydrogen Accumulation ◽  
Nitrogen Ion

ABSTRACTThe influence of nitrogen ion implantation on the hydrogen accumulation in titanium was investigated as function of sample temperature and ion fluence. 150 keV nitrogen (15N) ions were implanted at different sample temperatures up to 700°C with fluences ranging from 1 × 1017 to 1 × 1018 ions/cm2. The amount of accumulated hydrogen and its depth distribution was measured quantitatively with the 15N depth profiling method. The implanted 15N depth profiles were measured by the reverse reaction 15N(p, αγ)12C at 429 keV. The binary phases of the implanted nitrogen with titanium are detected by grazing incidence x-ray diffraction. The results are compared with those obtained for samples implanted at RT and subsequently thermally treated.

Investigations on nitrogen ion implantation effects in vacuum evaporated CdS thin films using Raman scattering and X-ray diffraction studies

2001 ◽  
Vol 304 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
K. Senthil ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass ◽  
R. Kesavamoorthy ◽  
G.L.N. Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Cds Thin Films ◽  
Nitrogen Ion

Depth Profiling of Cu(In,Ga)Se2 by Grazing Incidence X-ray Diffraction

2003 ◽  
Vol 763 ◽  
Author(s):  
I.M. Kötschau ◽  
G. Bilger ◽  
H.W. Schock
Keyword(s):  
Thin Film ◽  
Depth Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Strong Impact ◽  
X Ray Diffraction ◽  
Typical Application ◽  
X Ray ◽  
Depth Profiles

AbstractGrazing incidence X-ray diffraction (GIXRD) in conjunction with a layer absorption modeling algorithm is a powerful tool for studying the structural properties of polycrystaline thin films. A typical application is the refinement of compositional depth profiles. Of genera interest are the depth profile of the Ga/(In+Ga)-ratio over the entire thickness of the thin film, as well as the depth profile of th Cu/(In+Ga)-ratio near the surface. In this respect the three stage process is a particular interesting deposition technique. A remarkable recrystalization of the entire thin film at the end of the second stage has a strong impact on Ga-gradients as well as on the Cu-depletion close to the surface. In this contribution we use the GIXRD technique to refine composititional depth profiles obtained by secondary ion mass spectrometry (SIMS). We demonstrate that structura changes near the surface due to the recrystalization can be monitored. In addition we are able measure the depth of a Cu-depleted surface layer with high accuracy.

scholarly journals SURFACE CHARACTERIZATION OF TITANIUM ALLOYS FOR NITROGEN ION IMPLANTATION

2017 ◽  
Vol 9 ◽  
pp. 39
Author(s):  
Petr Vertat ◽  
Jan Drahokoupil ◽  
Petr Vlcak
Keyword(s):  
Surface Modification ◽  
Ion Implantation ◽  
Surface Characterization ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Commercially Pure ◽  
Before And After ◽  
Nitrogen Ion

Ion implantation is one of the modern methods of the surface modification of various materials. Industrially used Ti–6Al–4V titanium alloy and commercially pure Ti grade 2 were characterized using the X–ray diffraction methods. Texture of the material and dependence of the microstructural properties on the method of the surface modification were examined in order to determine suitable conditions for application of the process in the industry. The structure of Ti–6Al–4V alloy before and after the nitrogen ion implantation process is discussed and observed surface hardening is explained.

Proposed Methods for Depth Profiling of Residual Stresses using Grazing Incidence X-Ray Diffraction (GIXD)

1992 ◽  
Vol 36 ◽  
pp. 237-245 ◽  
Author(s):  
Paul Predecki ◽  
X. Zhu ◽  
B. Ballard
Keyword(s):  
Integral Method ◽  
Direct Method ◽  
Incident Angle ◽  
Strain Tensor ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
A Direct Method

AbstractTwo proposed methods are described for obtaining the depth profiles (τ-profiles) of strains and stresses as a function of the 1/e penetration depth τ, using GIXD in the asymmetric geometry, without the need for layer removal. In the first, the ψ-method: ψ is varied, for a given reflection, while holding τ constant, by varying the wavelength λ and adjusting the incident angle α so as to maintain τ constant. This allows dϕ,ψ vs Sin2ψ plots to be obtained at constant τ. In the second, the ϕ-integral method: interplanar spacings dϕ,ψ are measured for ϕ values from 0 to 2π, at constant ψ and τ by holding α fixed. Two ψ values, i.e. two wavelengths, are needed to obtain the whole strain tensor, but if the sample is quasi-isotropic and the stress state is biaxial, only one wavelength is needed. A direct method is also described for obtaining the profiles as a function of depth z (z-profiles) from the corresponding τ-profiles using inverse Laplace transforms. Application of the method to the residual strain vs τ data of Doerner and Brennan for an Al film on Si is presented.

Depth Profiling Biaxial Stresses in Sputter Deposited Molybdenum Films; Use of the Cos2φ Method

1995 ◽  
Vol 39 ◽  
pp. 363-370
Author(s):  
B. L. Ballard ◽  
P. K. Predecki ◽  
T. R. Watkins ◽  
K. J. Kozaczek ◽  
D. N. Braski ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Stress Gradient ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Columnar Zone ◽  
X Ray ◽  
Depth Profiles ◽  
Oxygen Gradient ◽  
Sputter Deposited

Depth profiles of intrinsic in-plane, biaxial stresses were obtained as a function of τ, the 1/e penetration depth, in a 1.0 um thick planar d. c. magentron sputter deposited molybdenum film using asymmetric grazing incidence x-ray diffraction (GIXD). τ was varied between 20 and 276 Å. The stresses σ11 and σ22 were characterized in the directions parallel and perpendicular to the long axis of the cathode respectively using a cos2φ method. The results show that starting from τ=17Å, σ11 and σ22 are compressive and become rapidly more compressive with a minimum at τ ∼ 20 - 40 Å thereafter increasing gradually toward tensile values. The reasons for the shape of the stress gradient are not well understood but may be related to the relaxation of the stresses at the tops of the columnar Zone T-type microstructure and to the oxygen gradient in the film.

Development of a Numerical Procedure for Determining the Depth Profiles of X-Ray Diffraction Data

1993 ◽  
Vol 37 ◽  
pp. 197-203 ◽  
Author(s):  
Xiaojing Zhu ◽  
Paul Predecki
Keyword(s):  
Integral Equation ◽  
Diffraction Data ◽  
Linear Equations ◽  
Numerical Procedure ◽  
Grazing Incidence ◽  
Sample Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Data Errors

AbstractA numerical procedure is described and demonstrated for determining z-profiles from measured τ-profiles of diffraction data such as may be obtained by grazing incidence x-ray diffraction (GIXD). The z-profile was approximated by a piece wise linear function and the problem of solving the integral equation for the z-profile was thus converted to one of solving a set of linear equations. With a sufficient number of the linear pieces, the z-pTofile could be accurately determined. The procedure and its sensitivity to data errors was tested with several arbitrarily chosen known functions. It was found that when errors were introduced into either the τ-profile or the sample thickness D the resulting z-profiles become oscillatory.

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